DE2047316C3 - Verfahren zur Herstellung einer Speicherelektrode und Einrichtung zur Durchführung des Verfahrens - Google Patents

Verfahren zur Herstellung einer Speicherelektrode und Einrichtung zur Durchführung des Verfahrens

Info

Publication number
DE2047316C3
DE2047316C3 DE2047316A DE2047316A DE2047316C3 DE 2047316 C3 DE2047316 C3 DE 2047316C3 DE 2047316 A DE2047316 A DE 2047316A DE 2047316 A DE2047316 A DE 2047316A DE 2047316 C3 DE2047316 C3 DE 2047316C3
Authority
DE
Germany
Prior art keywords
photoresist layer
photomask
layer
diffraction image
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2047316A
Other languages
German (de)
English (en)
Other versions
DE2047316A1 (de
DE2047316B2 (enExample
Inventor
David Leslie Bassersdorf Greenaway (Schweiz)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE2047316A1 publication Critical patent/DE2047316A1/de
Publication of DE2047316B2 publication Critical patent/DE2047316B2/de
Application granted granted Critical
Publication of DE2047316C3 publication Critical patent/DE2047316C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P76/2042—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S359/00—Optical: systems and elements
    • Y10S359/90—Methods

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE2047316A 1969-09-25 1970-09-25 Verfahren zur Herstellung einer Speicherelektrode und Einrichtung zur Durchführung des Verfahrens Expired DE2047316C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86086569A 1969-09-25 1969-09-25

Publications (3)

Publication Number Publication Date
DE2047316A1 DE2047316A1 (de) 1971-05-06
DE2047316B2 DE2047316B2 (enExample) 1978-08-17
DE2047316C3 true DE2047316C3 (de) 1979-04-19

Family

ID=25334219

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2047316A Expired DE2047316C3 (de) 1969-09-25 1970-09-25 Verfahren zur Herstellung einer Speicherelektrode und Einrichtung zur Durchführung des Verfahrens

Country Status (6)

Country Link
US (1) US3615449A (enExample)
JP (1) JPS5310429B1 (enExample)
DE (1) DE2047316C3 (enExample)
FR (1) FR2062602A5 (enExample)
GB (1) GB1307257A (enExample)
NL (1) NL7014102A (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT939738B (it) * 1970-08-12 1973-02-10 Rank Organisation Ltd Dispositivo di illuminazione per la stampa fotolitografica dei componenti di microcircuiti
DE2116713B2 (de) * 1971-04-06 1974-03-28 Ibm Deutschland Gmbh, 7000 Stuttgart Belichtungsverfahren zum Abbilden sehr fein strukturierter Lichtmuster auf Photolackschichten und dazu geeignete Belichtungsvorrichtung
US3697178A (en) * 1971-11-01 1972-10-10 Rca Corp Method of projection printing photoresist masking layers, including elimination of spurious diffraction-associated patterns from the print
JPS54137932U (enExample) * 1978-03-15 1979-09-25
JPS54138016U (enExample) * 1978-03-18 1979-09-25
US4231820A (en) * 1979-02-21 1980-11-04 Rca Corporation Method of making a silicon diode array target
US4360586A (en) * 1979-05-29 1982-11-23 Massachusetts Institute Of Technology Spatial period division exposing
FR2465255B1 (fr) * 1979-09-10 1987-02-20 Roumiguieres Jean Louis Procede pour reporter sur un support l'ombre fidele d'un masque perce de fentes distribuees periodiquement, et application de ce procede notamment en photolithogravure
DE3212393A1 (de) * 1982-04-02 1983-10-13 Karl Süss KG, Präzisionsgeräte für Wissenschaft und Industrie - GmbH & Co, 8046 Garching Verfahren zur interferenzverschmierung sowie ausrichtverfahren und -vorrichtung
DE3315665A1 (de) * 1983-04-29 1984-10-31 Siemens AG, 1000 Berlin und 8000 München Herstellung von galvanoplastischen flachteilen mit totationsunsymmetrischen, kegelfoermigen strukturen
GB8615908D0 (en) * 1986-06-30 1986-08-06 Hugle W B Integrated circuits
US5264957A (en) * 1992-07-02 1993-11-23 The United States Of America As Represented By The Secretary Of The Air Force Electrically controlled multiple dispersion (zoom) device
GB2289771B (en) * 1994-05-26 1997-07-30 Northern Telecom Ltd Forming Bragg gratings in photosensitive waveguides
DE19810055A1 (de) * 1998-03-09 1999-09-23 Suess Kg Karl Verfahren zur Nahfeldbelichtung mit im wesentlichen parallelem Licht
US6096458A (en) * 1998-08-05 2000-08-01 International Business Machines Corporation Methods for manufacturing photolithography masks utilizing interfering beams of radiation
EP1810085B1 (en) * 2004-10-22 2011-03-16 Eulitha AG A system and a method for generating periodic and/or quasi-periodic pattern on a sample
EP2711746A4 (en) * 2011-05-19 2015-04-01 Hitachi High Tech Corp METHOD OF MANUFACTURING A BEAM GRID, SPECTROPHOTOMETER AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
US11042098B2 (en) * 2019-02-15 2021-06-22 Applied Materials, Inc. Large area high resolution feature reduction lithography technique

Also Published As

Publication number Publication date
JPS5310429B1 (enExample) 1978-04-13
DE2047316A1 (de) 1971-05-06
DE2047316B2 (enExample) 1978-08-17
FR2062602A5 (enExample) 1971-06-25
NL7014102A (enExample) 1971-03-29
GB1307257A (en) 1973-02-14
US3615449A (en) 1971-10-26

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
EHJ Ceased/non-payment of the annual fee