DE2037414A1 - Integrierte Schaltungsanordnung - Google Patents
Integrierte SchaltungsanordnungInfo
- Publication number
- DE2037414A1 DE2037414A1 DE19702037414 DE2037414A DE2037414A1 DE 2037414 A1 DE2037414 A1 DE 2037414A1 DE 19702037414 DE19702037414 DE 19702037414 DE 2037414 A DE2037414 A DE 2037414A DE 2037414 A1 DE2037414 A1 DE 2037414A1
- Authority
- DE
- Germany
- Prior art keywords
- transistors
- base
- collector
- transistor
- pair
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 22
- 238000009413 insulation Methods 0.000 claims description 10
- 238000002955 isolation Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 238000010292 electrical insulation Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 241001080526 Vertica Species 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010615 ring circuit Methods 0.000 description 1
- 238000009416 shuttering Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K21/00—Details of pulse counters or frequency dividers
- H03K21/08—Output circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
- H03K23/002—Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/63—Combinations of vertical and lateral BJTs
Landscapes
- Bipolar Integrated Circuits (AREA)
- Analogue/Digital Conversion (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US84528669A | 1969-07-28 | 1969-07-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2037414A1 true DE2037414A1 (de) | 1971-04-15 |
Family
ID=25294865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702037414 Pending DE2037414A1 (de) | 1969-07-28 | 1970-07-28 | Integrierte Schaltungsanordnung |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS4926755B1 (enrdf_load_stackoverflow) |
| DE (1) | DE2037414A1 (enrdf_load_stackoverflow) |
| FR (2) | FR2060061B1 (enrdf_load_stackoverflow) |
| GB (2) | GB1287964A (enrdf_load_stackoverflow) |
| NL (1) | NL7009942A (enrdf_load_stackoverflow) |
| SE (1) | SE364398B (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2538910C3 (de) * | 1975-09-02 | 1980-01-10 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Schaltungsanordnung zur Erhöhung der Schaltgeschwindigkeit einer integrierten Schaltung |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1507377A (fr) * | 1966-11-18 | 1967-12-29 | Csf | Intégration d'un doublet npn-pnp |
-
1970
- 1970-06-18 GB GB933670A patent/GB1287964A/en not_active Expired
- 1970-06-18 GB GB2969170A patent/GB1287963A/en not_active Expired
- 1970-07-06 NL NL7009942A patent/NL7009942A/xx unknown
- 1970-07-21 JP JP45063886A patent/JPS4926755B1/ja active Pending
- 1970-07-27 SE SE10314/70A patent/SE364398B/xx unknown
- 1970-07-27 FR FR7027672A patent/FR2060061B1/fr not_active Expired
- 1970-07-28 DE DE19702037414 patent/DE2037414A1/de active Pending
-
1972
- 1972-07-31 FR FR727227554A patent/FR2143981B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2143981B1 (enrdf_load_stackoverflow) | 1973-07-13 |
| SE364398B (enrdf_load_stackoverflow) | 1974-02-18 |
| GB1287963A (enrdf_load_stackoverflow) | 1972-09-06 |
| FR2060061A1 (enrdf_load_stackoverflow) | 1971-06-11 |
| JPS4926755B1 (enrdf_load_stackoverflow) | 1974-07-11 |
| NL7009942A (enrdf_load_stackoverflow) | 1971-02-01 |
| GB1287964A (enrdf_load_stackoverflow) | 1972-09-06 |
| FR2143981A1 (enrdf_load_stackoverflow) | 1973-02-09 |
| FR2060061B1 (enrdf_load_stackoverflow) | 1976-10-29 |
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