JPS4926755B1 - - Google Patents

Info

Publication number
JPS4926755B1
JPS4926755B1 JP6388670A JP6388670A JPS4926755B1 JP S4926755 B1 JPS4926755 B1 JP S4926755B1 JP 6388670 A JP6388670 A JP 6388670A JP 6388670 A JP6388670 A JP 6388670A JP S4926755 B1 JPS4926755 B1 JP S4926755B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6388670A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4926755B1 publication Critical patent/JPS4926755B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821Combination of lateral and vertical transistors only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K21/00Details of pulse counters or frequency dividers
    • H03K21/08Output circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K23/00Pulse counters comprising counting chains; Frequency dividers comprising counting chains
    • H03K23/002Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Analogue/Digital Conversion (AREA)
JP6388670A 1969-07-28 1970-07-21 Pending JPS4926755B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84528669A 1969-07-28 1969-07-28

Publications (1)

Publication Number Publication Date
JPS4926755B1 true JPS4926755B1 (ja) 1974-07-11

Family

ID=25294865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6388670A Pending JPS4926755B1 (ja) 1969-07-28 1970-07-21

Country Status (6)

Country Link
JP (1) JPS4926755B1 (ja)
DE (1) DE2037414A1 (ja)
FR (2) FR2060061B1 (ja)
GB (2) GB1287964A (ja)
NL (1) NL7009942A (ja)
SE (1) SE364398B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2538910C3 (de) * 1975-09-02 1980-01-10 Philips Patentverwaltung Gmbh, 2000 Hamburg Schaltungsanordnung zur Erhöhung der Schaltgeschwindigkeit einer integrierten Schaltung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1507377A (fr) * 1966-11-18 1967-12-29 Csf Intégration d'un doublet npn-pnp

Also Published As

Publication number Publication date
SE364398B (ja) 1974-02-18
NL7009942A (ja) 1971-02-01
GB1287964A (ja) 1972-09-06
FR2060061A1 (ja) 1971-06-11
GB1287963A (ja) 1972-09-06
FR2143981A1 (ja) 1973-02-09
FR2143981B1 (ja) 1973-07-13
DE2037414A1 (de) 1971-04-15
FR2060061B1 (ja) 1976-10-29

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