DE2032872C3 - - Google Patents

Info

Publication number
DE2032872C3
DE2032872C3 DE2032872A DE2032872A DE2032872C3 DE 2032872 C3 DE2032872 C3 DE 2032872C3 DE 2032872 A DE2032872 A DE 2032872A DE 2032872 A DE2032872 A DE 2032872A DE 2032872 C3 DE2032872 C3 DE 2032872C3
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2032872A
Other languages
German (de)
Other versions
DE2032872B2 (de
DE2032872A1 (de
Inventor
Detlev Schmitter
Hans Dipl.-Phys. Dr.Rer.Nat. Ullrich
Rudolf Dipl.-Phys. 8031 Gilching Woelfle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE2032872A priority Critical patent/DE2032872B2/de
Priority to CH705871A priority patent/CH523593A/de
Priority to GB1297467D priority patent/GB1297467A/en
Priority to AT516671A priority patent/AT311462B/de
Priority to US00158458A priority patent/US3761309A/en
Priority to CA117082A priority patent/CA932877A/en
Priority to FR7124067A priority patent/FR2097133B1/fr
Priority to NL7109193A priority patent/NL7109193A/xx
Priority to SE08630/71A priority patent/SE360779B/xx
Publication of DE2032872A1 publication Critical patent/DE2032872A1/de
Publication of DE2032872B2 publication Critical patent/DE2032872B2/de
Application granted granted Critical
Publication of DE2032872C3 publication Critical patent/DE2032872C3/de
Granted legal-status Critical Current

Links

Classifications

    • H10W72/012—
    • H10W72/072—
    • H10W72/01255—
    • H10W72/019—
    • H10W72/07236—
    • H10W72/07251—
    • H10W72/20—
    • H10W72/251—
    • H10W72/252—
    • H10W72/29—
    • H10W72/923—
    • H10W72/9415—
    • H10W72/952—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/923—Physical dimension
    • Y10S428/924—Composite
    • Y10S428/926—Thickness of individual layer specified
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9335—Product by special process
    • Y10S428/934—Electrical process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12389—All metal or with adjacent metals having variation in thickness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12639—Adjacent, identical composition, components
    • Y10T428/12646—Group VIII or IB metal-base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12701—Pb-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component
    • Y10T428/12764—Next to Al-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12889—Au-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12944—Ni-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/266—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension of base or substrate
DE2032872A 1970-07-02 1970-07-02 Verfahren zum Herstellen weichlötfähiger Kontakte zum Einbau von Halbleiterbauelementen in Gehäuse Granted DE2032872B2 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE2032872A DE2032872B2 (de) 1970-07-02 1970-07-02 Verfahren zum Herstellen weichlötfähiger Kontakte zum Einbau von Halbleiterbauelementen in Gehäuse
CH705871A CH523593A (de) 1970-07-02 1971-05-13 Verfahren zum Herstellen weichlötfähiger Metallkontakte
GB1297467D GB1297467A (cg-RX-API-DMAC10.html) 1970-07-02 1971-06-09
AT516671A AT311462B (de) 1970-07-02 1971-06-15 Verfahren zum Herstellen weichlötfähiger Metallkontakte für den elektrischen Anschluß von Halbleiterbauelementen in Gehäusen
US00158458A US3761309A (en) 1970-07-02 1971-06-30 Ctor components into housings method of producing soft solderable contacts for installing semicondu
CA117082A CA932877A (en) 1970-07-02 1971-06-30 Production of soft-solderable contacts for the installation of semiconductor components into housings
FR7124067A FR2097133B1 (cg-RX-API-DMAC10.html) 1970-07-02 1971-07-01
NL7109193A NL7109193A (cg-RX-API-DMAC10.html) 1970-07-02 1971-07-02
SE08630/71A SE360779B (cg-RX-API-DMAC10.html) 1970-07-02 1971-07-02

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2032872A DE2032872B2 (de) 1970-07-02 1970-07-02 Verfahren zum Herstellen weichlötfähiger Kontakte zum Einbau von Halbleiterbauelementen in Gehäuse

Publications (3)

Publication Number Publication Date
DE2032872A1 DE2032872A1 (de) 1972-01-05
DE2032872B2 DE2032872B2 (de) 1975-03-20
DE2032872C3 true DE2032872C3 (cg-RX-API-DMAC10.html) 1975-10-30

Family

ID=5775639

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2032872A Granted DE2032872B2 (de) 1970-07-02 1970-07-02 Verfahren zum Herstellen weichlötfähiger Kontakte zum Einbau von Halbleiterbauelementen in Gehäuse

Country Status (9)

Country Link
US (1) US3761309A (cg-RX-API-DMAC10.html)
AT (1) AT311462B (cg-RX-API-DMAC10.html)
CA (1) CA932877A (cg-RX-API-DMAC10.html)
CH (1) CH523593A (cg-RX-API-DMAC10.html)
DE (1) DE2032872B2 (cg-RX-API-DMAC10.html)
FR (1) FR2097133B1 (cg-RX-API-DMAC10.html)
GB (1) GB1297467A (cg-RX-API-DMAC10.html)
NL (1) NL7109193A (cg-RX-API-DMAC10.html)
SE (1) SE360779B (cg-RX-API-DMAC10.html)

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US4094675A (en) * 1973-07-23 1978-06-13 Licentia Patent-Verwaltungs-G.M.B.H. Vapor deposition of photoconductive selenium onto a metallic substrate having a molten metal coating as bonding layer
DE2428373C2 (de) * 1974-06-12 1982-05-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von weichlötbaren Anschlußkontakten auf einer Halbleiteranordnung
US4087314A (en) * 1976-09-13 1978-05-02 Motorola, Inc. Bonding pedestals for semiconductor devices
IT1075077B (it) * 1977-03-08 1985-04-22 Ates Componenti Elettron Metodo pr realizzare contatti su semiconduttori
US4293637A (en) * 1977-05-31 1981-10-06 Matsushita Electric Industrial Co., Ltd. Method of making metal electrode of semiconductor device
US4394678A (en) * 1979-09-19 1983-07-19 Motorola, Inc. Elevated edge-protected bonding pedestals for semiconductor devices
NL186354C (nl) * 1981-01-13 1990-11-01 Sharp Kk Halfgeleiderinrichting die uit iii-v verbindingen bestaat, met een samengestelde elektrode.
US4505029A (en) * 1981-03-23 1985-03-19 General Electric Company Semiconductor device with built-up low resistance contact
EP0076856A4 (en) * 1981-04-21 1984-03-01 Seiichiro Aigoo METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE WITH A PROJECTED PLATED ELECTRODE.
JPS5830147A (ja) * 1981-08-18 1983-02-22 Toshiba Corp 半導体装置
EP0074605B1 (en) * 1981-09-11 1990-08-29 Kabushiki Kaisha Toshiba Method for manufacturing multilayer circuit substrate
US4447857A (en) * 1981-12-09 1984-05-08 International Business Machines Corporation Substrate with multiple type connections
US4486511A (en) * 1983-06-27 1984-12-04 National Semiconductor Corporation Solder composition for thin coatings
US4899199A (en) * 1983-09-30 1990-02-06 International Rectifier Corporation Schottky diode with titanium or like layer contacting the dielectric layer
US4600658A (en) * 1983-11-07 1986-07-15 Motorola, Inc. Metallization means and method for high temperature applications
US4495222A (en) * 1983-11-07 1985-01-22 Motorola, Inc. Metallization means and method for high temperature applications
DE3406542A1 (de) * 1984-02-23 1985-08-29 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zum herstellen eines halbleiterbauelementes
JPH0684546B2 (ja) * 1984-10-26 1994-10-26 京セラ株式会社 電子部品
NL8600021A (nl) * 1986-01-08 1987-08-03 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij op een halfgeleiderlichaam een metallisatie met een dikke aansluitelektrode wordt aangebracht.
JPH0815152B2 (ja) * 1986-01-27 1996-02-14 三菱電機株式会社 半導体装置及びその製造方法
US5270253A (en) * 1986-01-27 1993-12-14 Mitsubishi Denki Kabushiki Kaisha Method of producing semiconductor device
US4742023A (en) * 1986-08-28 1988-05-03 Fujitsu Limited Method for producing a semiconductor device
US4813129A (en) * 1987-06-19 1989-03-21 Hewlett-Packard Company Interconnect structure for PC boards and integrated circuits
US4878990A (en) * 1988-05-23 1989-11-07 General Dynamics Corp., Pomona Division Electroformed and chemical milled bumped tape process
US4878294A (en) * 1988-06-20 1989-11-07 General Dynamics Corp., Pomona Division Electroformed chemically milled probes for chip testing
US5027062A (en) * 1988-06-20 1991-06-25 General Dynamics Corporation, Air Defense Systems Division Electroformed chemically milled probes for chip testing
US5079223A (en) * 1988-12-19 1992-01-07 Arch Development Corporation Method of bonding metals to ceramics
US5130779A (en) * 1990-06-19 1992-07-14 International Business Machines Corporation Solder mass having conductive encapsulating arrangement
JPH04346231A (ja) * 1991-05-23 1992-12-02 Canon Inc 半導体装置の製造方法
US5515604A (en) * 1992-10-07 1996-05-14 Fujitsu Limited Methods for making high-density/long-via laminated connectors
US5396702A (en) * 1993-12-15 1995-03-14 At&T Corp. Method for forming solder bumps on a substrate using an electrodeposition technique
GB2300375B (en) * 1994-08-01 1998-02-25 Nippon Denso Co Bonding method for electric element
JP3271475B2 (ja) * 1994-08-01 2002-04-02 株式会社デンソー 電気素子の接合材料および接合方法
DE4442960C1 (de) * 1994-12-02 1995-12-21 Fraunhofer Ges Forschung Lothöcker für die Flip-Chip-Montage und Verfahren zu dessen Herstellung
TW453137B (en) * 1997-08-25 2001-09-01 Showa Denko Kk Electrode structure of silicon semiconductor device and the manufacturing method of silicon device using it
WO2005093816A1 (en) * 2004-03-05 2005-10-06 Infineon Technologies Ag Semiconductor device for radio frequency applications and method for making the same
DE102005058654B4 (de) * 2005-12-07 2015-06-11 Infineon Technologies Ag Verfahren zum flächigen Fügen von Komponenten von Halbleiterbauelementen
FR2913145B1 (fr) * 2007-02-22 2009-05-15 Stmicroelectronics Crolles Sas Assemblage de deux parties de circuit electronique integre
US8264072B2 (en) 2007-10-22 2012-09-11 Infineon Technologies Ag Electronic device
TW201113962A (en) * 2009-10-14 2011-04-16 Advanced Semiconductor Eng Chip having metal pillar structure
TWI445147B (zh) * 2009-10-14 2014-07-11 日月光半導體製造股份有限公司 半導體元件
TWI478303B (zh) 2010-09-27 2015-03-21 日月光半導體製造股份有限公司 具有金屬柱之晶片及具有金屬柱之晶片之封裝結構
TWI451546B (zh) 2010-10-29 2014-09-01 日月光半導體製造股份有限公司 堆疊式封裝結構、其封裝結構及封裝結構之製造方法
US8435881B2 (en) * 2011-06-23 2013-05-07 STAT ChipPAC, Ltd. Semiconductor device and method of forming protective coating over interconnect structure to inhibit surface oxidation
US8587120B2 (en) * 2011-06-23 2013-11-19 Stats Chippac, Ltd. Semiconductor device and method of forming interconnect structure over seed layer on contact pad of semiconductor die without undercutting seed layer beneath interconnect structure
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US3178271A (en) * 1960-02-26 1965-04-13 Philco Corp High temperature ohmic joint for silicon semiconductor devices and method of forming same
DE1514885A1 (de) * 1965-10-21 1969-11-06 Telefunken Patent Halbleiteranordnung,insbesondere Planartransistor,Diode oder integrierte Schaltung
US3585461A (en) * 1968-02-19 1971-06-15 Westinghouse Electric Corp High reliability semiconductive devices and integrated circuits

Also Published As

Publication number Publication date
CA932877A (en) 1973-08-28
CH523593A (de) 1972-05-31
SE360779B (cg-RX-API-DMAC10.html) 1973-10-01
AT311462B (de) 1973-11-26
DE2032872B2 (de) 1975-03-20
FR2097133B1 (cg-RX-API-DMAC10.html) 1977-06-03
DE2032872A1 (de) 1972-01-05
GB1297467A (cg-RX-API-DMAC10.html) 1972-11-22
NL7109193A (cg-RX-API-DMAC10.html) 1972-01-04
FR2097133A1 (cg-RX-API-DMAC10.html) 1972-03-03
US3761309A (en) 1973-09-25

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
EHJ Ceased/non-payment of the annual fee