DE2032320C3 - Verfahren zur Verbesserung der Haftung eines leitenden Materials auf einem nichtleitenden anorganischen Substratmaterial - Google Patents

Verfahren zur Verbesserung der Haftung eines leitenden Materials auf einem nichtleitenden anorganischen Substratmaterial

Info

Publication number
DE2032320C3
DE2032320C3 DE2032320A DE2032320A DE2032320C3 DE 2032320 C3 DE2032320 C3 DE 2032320C3 DE 2032320 A DE2032320 A DE 2032320A DE 2032320 A DE2032320 A DE 2032320A DE 2032320 C3 DE2032320 C3 DE 2032320C3
Authority
DE
Germany
Prior art keywords
conductive
adhesion
silicon
substrate material
tungsten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2032320A
Other languages
German (de)
English (en)
Other versions
DE2032320A1 (de
DE2032320B2 (de
Inventor
Ashok Frank Somers N.Y. Mayadas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2032320A1 publication Critical patent/DE2032320A1/de
Publication of DE2032320B2 publication Critical patent/DE2032320B2/de
Application granted granted Critical
Publication of DE2032320C3 publication Critical patent/DE2032320C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/0027—Ion-implantation, ion-irradiation or ion-injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/158—Sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Structural Engineering (AREA)
  • Materials Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
DE2032320A 1969-06-30 1970-06-30 Verfahren zur Verbesserung der Haftung eines leitenden Materials auf einem nichtleitenden anorganischen Substratmaterial Expired DE2032320C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US83777969A 1969-06-30 1969-06-30

Publications (3)

Publication Number Publication Date
DE2032320A1 DE2032320A1 (de) 1971-01-07
DE2032320B2 DE2032320B2 (de) 1981-02-05
DE2032320C3 true DE2032320C3 (de) 1981-12-17

Family

ID=25275398

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2032320A Expired DE2032320C3 (de) 1969-06-30 1970-06-30 Verfahren zur Verbesserung der Haftung eines leitenden Materials auf einem nichtleitenden anorganischen Substratmaterial

Country Status (6)

Country Link
US (1) US3704166A (enExample)
JP (1) JPS4842389B1 (enExample)
CA (1) CA969436A (enExample)
DE (1) DE2032320C3 (enExample)
FR (1) FR2048035B1 (enExample)
GB (1) GB1301529A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4022931A (en) * 1974-07-01 1977-05-10 Motorola, Inc. Process for making semiconductor device
US4433004A (en) * 1979-07-11 1984-02-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and a method for manufacturing the same
US4532149A (en) * 1981-10-21 1985-07-30 The United States Of America As Represented By The United States Department Of Energy Method for producing hard-surfaced tools and machine components
JPS60138918A (ja) * 1983-12-27 1985-07-23 Toshiba Corp 半導体装置の製造方法
US5084414A (en) * 1985-03-15 1992-01-28 Hewlett-Packard Company Metal interconnection system with a planar surface
EP0195977B1 (en) * 1985-03-15 1994-09-28 Hewlett-Packard Company Metal interconnection system with a planar surface
US4681818A (en) * 1986-03-18 1987-07-21 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Oxygen diffusion barrier coating
US4732801A (en) * 1986-04-30 1988-03-22 International Business Machines Corporation Graded oxide/nitride via structure and method of fabrication therefor
US5437729A (en) * 1993-04-08 1995-08-01 Martin Marietta Energy Systems, Inc. Controlled removal of ceramic surfaces with combination of ions implantation and ultrasonic energy
US6111314A (en) * 1998-08-26 2000-08-29 International Business Machines Corporation Thermal cap with embedded particles

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE637621A (enExample) * 1962-05-25 1900-01-01
US3290127A (en) * 1964-03-30 1966-12-06 Bell Telephone Labor Inc Barrier diode with metal contact and method of making

Also Published As

Publication number Publication date
FR2048035A1 (enExample) 1971-03-19
CA969436A (en) 1975-06-17
FR2048035B1 (enExample) 1974-03-15
JPS4842389B1 (enExample) 1973-12-12
DE2032320A1 (de) 1971-01-07
DE2032320B2 (de) 1981-02-05
US3704166A (en) 1972-11-28
GB1301529A (enExample) 1972-12-29

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee