DE2031916B2 - Verfahren zur Abscheidung von einkristallinen Halbleiterverbindungen des Typs A" B™ C2V odei eines Mischkristalls derselben - Google Patents
Verfahren zur Abscheidung von einkristallinen Halbleiterverbindungen des Typs A" B™ C2V odei eines Mischkristalls derselbenInfo
- Publication number
- DE2031916B2 DE2031916B2 DE2031916A DE2031916A DE2031916B2 DE 2031916 B2 DE2031916 B2 DE 2031916B2 DE 2031916 A DE2031916 A DE 2031916A DE 2031916 A DE2031916 A DE 2031916A DE 2031916 B2 DE2031916 B2 DE 2031916B2
- Authority
- DE
- Germany
- Prior art keywords
- type
- mixed crystal
- substrate
- compound
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR6922193A FR2050207B1 (https=) | 1969-07-01 | 1969-07-01 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2031916A1 DE2031916A1 (de) | 1971-01-21 |
| DE2031916B2 true DE2031916B2 (de) | 1978-08-03 |
| DE2031916C3 DE2031916C3 (https=) | 1979-04-05 |
Family
ID=9036716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2031916A Granted DE2031916B2 (de) | 1969-07-01 | 1970-06-27 | Verfahren zur Abscheidung von einkristallinen Halbleiterverbindungen des Typs A" B™ C2V odei eines Mischkristalls derselben |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS4840300B1 (https=) |
| DE (1) | DE2031916B2 (https=) |
| FR (1) | FR2050207B1 (https=) |
| GB (1) | GB1313891A (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54129800A (en) * | 1978-03-31 | 1979-10-08 | Kodensha Kk | Safety device for gun muzzle |
| JPS556151A (en) * | 1978-06-30 | 1980-01-17 | Kodensha Kk | Safety device for gun |
-
1969
- 1969-07-01 FR FR6922193A patent/FR2050207B1/fr not_active Expired
-
1970
- 1970-06-27 DE DE2031916A patent/DE2031916B2/de active Granted
- 1970-06-30 GB GB3170470A patent/GB1313891A/en not_active Expired
- 1970-07-01 JP JP5723270A patent/JPS4840300B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2050207A1 (https=) | 1971-04-02 |
| DE2031916A1 (de) | 1971-01-21 |
| DE2031916C3 (https=) | 1979-04-05 |
| JPS4840300B1 (https=) | 1973-11-29 |
| FR2050207B1 (https=) | 1974-09-20 |
| GB1313891A (en) | 1973-04-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |