DE20308308U1 - Integriertes Bildsensormodul - Google Patents

Integriertes Bildsensormodul

Info

Publication number
DE20308308U1
DE20308308U1 DE20308308U DE20308308U DE20308308U1 DE 20308308 U1 DE20308308 U1 DE 20308308U1 DE 20308308 U DE20308308 U DE 20308308U DE 20308308 U DE20308308 U DE 20308308U DE 20308308 U1 DE20308308 U1 DE 20308308U1
Authority
DE
Germany
Prior art keywords
substrate
image sensor
sensor module
photosensitive chip
module according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE20308308U
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kingpak Technology Inc
Original Assignee
Kingpak Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kingpak Technology Inc filed Critical Kingpak Technology Inc
Priority to DE20308308U priority Critical patent/DE20308308U1/de
Publication of DE20308308U1 publication Critical patent/DE20308308U1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Description

Der Beschreibungstext wurde nicht elektronisch erfaßt
Der Beschreibungstext wurde nicht elektronisch erfaßt
Der Beschreibungstext wurde nicht elektronisch erfaßt
Der Beschreibungstext wurde nicht elektronisch erfaßt
Der Beschreibungstext wurde nicht elektronisch erfaßt

Claims (7)

1. Integriertes Bildsensormodul mit:
  • - einem Substrat mit einer Oberseite und einer Unterseite;
  • - einer Rahmenschicht mit einer ersten Fläche und einer zweiten Fläche, wobei die erste Fläche an der Oberseite des Substrats montiert ist und zwischen dem Substrat und der Rahmenschicht ein Hohlraum gebildet ist;
  • - einem photoempfindlichen Chip mit einer Anzahl von Bond­ flecken, wobei der photoempfindlichen Chip an der Oberseite des Substrats innerhalb des Hohlraums montiert ist;
  • - mehreren elektrischen Elementen, die an der Oberseite des Substrats innerhalb des Hohlraums montiert sind;
  • - mehreren Drähten zum elektrischen Verbinden der Bondflecke des photoempfindlichen Chips mit dem Substrat; und
  • - einer transparenten Schicht zum Bedecken des photoempfind­ lichen Chips und der elektrischen Elemente, die mit einem konvexen Abschnitt versehen ist, der dem photoempfindlichen Chip entspricht.
2. Bildsensormodul nach Anspruch 1, dadurch gekennzeich­ net, dass die Oberseite des Substrats mit mehreren ersten Anschlusspunkten versehen ist, wobei die Drähte die Bondfle­ cke des photoempfindlichen Chips elektrisch mit den ersten Anschlusspunkten versehen.
3. Bildsensormodul nach Anspruch 1, dadurch gekennzeich­ net, dass die Unterseite des Substrats mit mehreren zweiten Anschlusspunkten versehen ist.
4. Bildsensormodul nach Anspruch 1, dadurch gekennzeich­ net, dass der konvexe Abschnitt der transparenten Schicht über bogenförmige Struktur verfügt.
5. Bildsensormodul nach Anspruch 1, dadurch gekennzeich­ net, dass die elektrischen Elemente aktive oder passive Kom­ ponenten sind.
6. Bildsensormodul nach Anspruch 1, dadurch gekennzeich­ net, dass die transparente Schicht aus einem Stück transpa­ renten Glases besteht, das auf der zweiten Fläche der Rah­ menschicht angebracht ist.
7. Bildsensormodul nach Anspruch 1, dadurch gekennzeich­ net, dass die transparente Schicht aus einem in den Hohlraum gefüllten transparenten Kleber besteht.
DE20308308U 2003-05-27 2003-05-27 Integriertes Bildsensormodul Expired - Lifetime DE20308308U1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE20308308U DE20308308U1 (de) 2003-05-27 2003-05-27 Integriertes Bildsensormodul

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE20308308U DE20308308U1 (de) 2003-05-27 2003-05-27 Integriertes Bildsensormodul

Publications (1)

Publication Number Publication Date
DE20308308U1 true DE20308308U1 (de) 2003-08-28

Family

ID=27798567

Family Applications (1)

Application Number Title Priority Date Filing Date
DE20308308U Expired - Lifetime DE20308308U1 (de) 2003-05-27 2003-05-27 Integriertes Bildsensormodul

Country Status (1)

Country Link
DE (1) DE20308308U1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016216981A1 (de) 2016-09-07 2018-03-08 Robert Bosch Gmbh Kamera und Herstellungsverfahren einer Kamera
US11146712B2 (en) 2017-09-21 2021-10-12 Robert Bosch Gmbh Method for manufacturing camera modules and a camera module array

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016216981A1 (de) 2016-09-07 2018-03-08 Robert Bosch Gmbh Kamera und Herstellungsverfahren einer Kamera
US11146712B2 (en) 2017-09-21 2021-10-12 Robert Bosch Gmbh Method for manufacturing camera modules and a camera module array

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Legal Events

Date Code Title Description
R207 Utility model specification

Effective date: 20031002

R156 Lapse of ip right after 3 years

Effective date: 20061201