DE2022925A1 - Halbleiterschalter-Bauelement - Google Patents
Halbleiterschalter-BauelementInfo
- Publication number
- DE2022925A1 DE2022925A1 DE19702022925 DE2022925A DE2022925A1 DE 2022925 A1 DE2022925 A1 DE 2022925A1 DE 19702022925 DE19702022925 DE 19702022925 DE 2022925 A DE2022925 A DE 2022925A DE 2022925 A1 DE2022925 A1 DE 2022925A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- area
- control electrode
- conductivity
- conductive state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 75
- 230000005669 field effect Effects 0.000 claims description 29
- 241001544515 Eretes Species 0.000 claims 2
- 235000016068 Berberis vulgaris Nutrition 0.000 claims 1
- 241000335053 Beta vulgaris Species 0.000 claims 1
- 101100072702 Drosophila melanogaster defl gene Proteins 0.000 claims 1
- 238000000034 method Methods 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000013461 design Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 244000201986 Cassia tora Species 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 241001233037 catfish Species 0.000 description 2
- NCAIGTHBQTXTLR-UHFFFAOYSA-N phentermine hydrochloride Chemical compound [Cl-].CC(C)([NH3+])CC1=CC=CC=C1 NCAIGTHBQTXTLR-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- 101150082527 ALAD gene Proteins 0.000 description 1
- 241000251730 Chondrichthyes Species 0.000 description 1
- 229920013685 Estron Polymers 0.000 description 1
- DNXHEGUUPJUMQT-CBZIJGRNSA-N Estrone Chemical compound OC1=CC=C2[C@H]3CC[C@](C)(C(CC4)=O)[C@@H]4[C@@H]3CCC2=C1 DNXHEGUUPJUMQT-CBZIJGRNSA-N 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- 229910020175 SiOH Inorganic materials 0.000 description 1
- 244000269722 Thea sinensis Species 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229960003399 estrone Drugs 0.000 description 1
- 101150085091 lat-2 gene Proteins 0.000 description 1
- 210000004072 lung Anatomy 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- VAOCPAMSLUNLGC-UHFFFAOYSA-N metronidazole Chemical compound CC1=NC=C([N+]([O-])=O)N1CCO VAOCPAMSLUNLGC-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000009965 odorless effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/40—Thyristors with turn-on by field effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
- H10D18/65—Gate-turn-off devices with turn-off by field effect
- H10D18/655—Gate-turn-off devices with turn-off by field effect produced by insulated gate structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/133—Thyristors having built-in components the built-in components being capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/135—Thyristors having built-in components the built-in components being diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA878170A CA878170A (en) | 1969-05-12 | 1969-05-12 | Field effect controlled switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2022925A1 true DE2022925A1 (de) | 1970-11-26 |
Family
ID=4085242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702022925 Pending DE2022925A1 (de) | 1969-05-12 | 1970-05-11 | Halbleiterschalter-Bauelement |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE750286A (enrdf_load_stackoverflow) |
| CA (1) | CA878170A (enrdf_load_stackoverflow) |
| DE (1) | DE2022925A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2044780A1 (enrdf_load_stackoverflow) |
| NL (1) | NL7006758A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0040816A1 (de) * | 1980-05-23 | 1981-12-02 | Siemens Aktiengesellschaft | Zweirichtungsthyristor |
| EP0505176A1 (en) * | 1991-03-22 | 1992-09-23 | Lucas Industries Public Limited Company | Breakover diode |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5135114B1 (enrdf_load_stackoverflow) * | 1970-12-28 | 1976-09-30 |
-
1969
- 1969-05-12 CA CA878170A patent/CA878170A/en not_active Expired
-
1970
- 1970-05-11 FR FR7017072A patent/FR2044780A1/fr not_active Withdrawn
- 1970-05-11 NL NL7006758A patent/NL7006758A/xx unknown
- 1970-05-11 DE DE19702022925 patent/DE2022925A1/de active Pending
- 1970-05-12 BE BE750286D patent/BE750286A/xx unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0040816A1 (de) * | 1980-05-23 | 1981-12-02 | Siemens Aktiengesellschaft | Zweirichtungsthyristor |
| EP0505176A1 (en) * | 1991-03-22 | 1992-09-23 | Lucas Industries Public Limited Company | Breakover diode |
Also Published As
| Publication number | Publication date |
|---|---|
| CA878170A (en) | 1971-08-10 |
| FR2044780A1 (enrdf_load_stackoverflow) | 1971-02-26 |
| BE750286A (fr) | 1970-10-16 |
| NL7006758A (enrdf_load_stackoverflow) | 1970-11-16 |
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