DE2021691A1 - Halbleiter-Bauelement - Google Patents

Halbleiter-Bauelement

Info

Publication number
DE2021691A1
DE2021691A1 DE19702021691 DE2021691A DE2021691A1 DE 2021691 A1 DE2021691 A1 DE 2021691A1 DE 19702021691 DE19702021691 DE 19702021691 DE 2021691 A DE2021691 A DE 2021691A DE 2021691 A1 DE2021691 A1 DE 2021691A1
Authority
DE
Germany
Prior art keywords
zone
semiconductor
crystal
edge
transition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19702021691
Other languages
German (de)
English (en)
Inventor
Robinson William Mccormick
Frank John Nicholas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE2021691A1 publication Critical patent/DE2021691A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/028—Dicing

Landscapes

  • Thyristors (AREA)
DE19702021691 1969-05-05 1970-05-04 Halbleiter-Bauelement Pending DE2021691A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US82168869A 1969-05-05 1969-05-05

Publications (1)

Publication Number Publication Date
DE2021691A1 true DE2021691A1 (de) 1970-11-12

Family

ID=25234052

Family Applications (2)

Application Number Title Priority Date Filing Date
DE7016645U Expired DE7016645U (de) 1969-05-05 1970-05-04 Kristalline halbleiterplatte.
DE19702021691 Pending DE2021691A1 (de) 1969-05-05 1970-05-04 Halbleiter-Bauelement

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE7016645U Expired DE7016645U (de) 1969-05-05 1970-05-04 Kristalline halbleiterplatte.

Country Status (7)

Country Link
US (1) US3628106A (enExample)
BE (1) BE749971A (enExample)
DE (2) DE7016645U (enExample)
FR (1) FR2044768B1 (enExample)
GB (1) GB1314267A (enExample)
IE (1) IE34131B1 (enExample)
SE (1) SE369646B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2448015A1 (de) * 1973-10-11 1975-04-17 Gen Electric Bidirektionale thyristortriode mit gold-diffundierter grenzschicht
FR2305854A1 (fr) * 1975-03-26 1976-10-22 Philips Nv Thyristor a surface passivee
FR2666174A1 (fr) * 1990-08-21 1992-02-28 Sgs Thomson Microelectronics Composant semiconducteur haute tension a faible courant de fuite.

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3908187A (en) * 1973-01-02 1975-09-23 Gen Electric High voltage power transistor and method for making
JPS5318380B2 (enExample) * 1974-06-05 1978-06-14
GB1536545A (en) * 1975-03-26 1978-12-20 Mullard Ltd Semiconductor device manufacture
US4063272A (en) * 1975-11-26 1977-12-13 General Electric Company Semiconductor device and method of manufacture thereof
GB1563421A (en) * 1975-12-18 1980-03-26 Gen Electric Polyimide-siloxane copolymer protective coating for semiconductor devices
JPS5346285A (en) * 1976-10-08 1978-04-25 Hitachi Ltd Mesa type high breakdown voltage semiconductor device
JPS56103447A (en) * 1980-01-22 1981-08-18 Toshiba Corp Dicing method of semiconductor wafer
GB2071411B (en) 1980-03-07 1983-12-21 Philips Electronic Associated Passivating p-n junction devices
US4814296A (en) * 1987-08-28 1989-03-21 Xerox Corporation Method of fabricating image sensor dies for use in assembling arrays
US5313094A (en) * 1992-01-28 1994-05-17 International Business Machines Corportion Thermal dissipation of integrated circuits using diamond paths
US5590460A (en) 1994-07-19 1997-01-07 Tessera, Inc. Method of making multilayer circuit
US5789302A (en) * 1997-03-24 1998-08-04 Siemens Aktiengesellschaft Crack stops
US6492201B1 (en) 1998-07-10 2002-12-10 Tessera, Inc. Forming microelectronic connection components by electrophoretic deposition
CN104254927B (zh) * 2012-04-16 2018-06-01 亮锐控股有限公司 用于产生w-台面管芯间隔的方法和装置
JP6833864B2 (ja) 2015-11-05 2021-02-24 アーベーベー・シュバイツ・アーゲーＡＢＢ Ｓｃｈｗｅｉｚ ＡＧ パワー半導体装置およびパワー半導体装置を作製するための方法
DE102016124669B3 (de) 2016-12-16 2018-05-17 Semikron Elektronik Gmbh & Co. Kg Thyristoren mit einem jeweiligen Halbleiterkörper
DE102016124670B4 (de) * 2016-12-16 2020-01-23 Semikron Elektronik Gmbh & Co. Kg Thyristor mit einem Halbleiterkörper
CN109307981B (zh) * 2017-07-26 2022-03-22 天津环鑫科技发展有限公司 一种gpp生产的光刻版工艺

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1182353C2 (de) * 1961-03-29 1973-01-11 Siemens Ag Verfahren zum Herstellen eines Halbleiter-bauelements, wie Halbleiterstromtor oder Flaechentransistor, mit einer hochohmigen n-Zone zwischen zwei p-Zonen im Halbleiter-koerper
BE623187A (enExample) * 1961-10-06
US3241010A (en) * 1962-03-23 1966-03-15 Texas Instruments Inc Semiconductor junction passivation
BE639633A (enExample) * 1962-11-07
GB1030669A (en) * 1964-12-02 1966-05-25 Standard Telephones Cables Ltd Semiconductor devices
US3442722A (en) * 1964-12-16 1969-05-06 Siemens Ag Method of making a pnpn thyristor
NL6603372A (enExample) * 1965-03-25 1966-09-26
US3283224A (en) * 1965-08-18 1966-11-01 Trw Semiconductors Inc Mold capping semiconductor device
US3492174A (en) * 1966-03-19 1970-01-27 Sony Corp Method of making a semiconductor device
GB1110993A (en) * 1967-01-09 1968-04-24 Standard Telephones Cables Ltd Semiconductors

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2448015A1 (de) * 1973-10-11 1975-04-17 Gen Electric Bidirektionale thyristortriode mit gold-diffundierter grenzschicht
FR2305854A1 (fr) * 1975-03-26 1976-10-22 Philips Nv Thyristor a surface passivee
FR2666174A1 (fr) * 1990-08-21 1992-02-28 Sgs Thomson Microelectronics Composant semiconducteur haute tension a faible courant de fuite.
EP0472481A3 (en) * 1990-08-21 1992-03-25 Sgs-Thomson Microelectronics S.A. High voltage semiconductor device having low leakage current

Also Published As

Publication number Publication date
SE369646B (enExample) 1974-09-09
DE7016645U (de) 1973-11-08
BE749971A (fr) 1970-10-16
FR2044768A1 (enExample) 1971-02-26
US3628106A (en) 1971-12-14
IE34131L (en) 1970-11-05
FR2044768B1 (enExample) 1974-02-01
IE34131B1 (en) 1975-02-19
GB1314267A (en) 1973-04-18

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