FR2044768B1 - - Google Patents

Info

Publication number
FR2044768B1
FR2044768B1 FR7016438A FR7016438A FR2044768B1 FR 2044768 B1 FR2044768 B1 FR 2044768B1 FR 7016438 A FR7016438 A FR 7016438A FR 7016438 A FR7016438 A FR 7016438A FR 2044768 B1 FR2044768 B1 FR 2044768B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7016438A
Other versions
FR2044768A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2044768A1 publication Critical patent/FR2044768A1/fr
Application granted granted Critical
Publication of FR2044768B1 publication Critical patent/FR2044768B1/fr
Expired legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • H01L23/3178Coating or filling in grooves made in the semiconductor body
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10S148/00Metal treatment
    • Y10S148/028Dicing

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
FR7016438A 1969-05-05 1970-05-05 Expired FR2044768B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US82168869A 1969-05-05 1969-05-05

Publications (2)

Publication Number Publication Date
FR2044768A1 FR2044768A1 (fr) 1971-02-26
FR2044768B1 true FR2044768B1 (fr) 1974-02-01

Family

ID=25234052

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7016438A Expired FR2044768B1 (fr) 1969-05-05 1970-05-05

Country Status (7)

Country Link
US (1) US3628106A (fr)
BE (1) BE749971A (fr)
DE (2) DE7016645U (fr)
FR (1) FR2044768B1 (fr)
GB (1) GB1314267A (fr)
IE (1) IE34131B1 (fr)
SE (1) SE369646B (fr)

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US3908187A (en) * 1973-01-02 1975-09-23 Gen Electric High voltage power transistor and method for making
US3943013A (en) * 1973-10-11 1976-03-09 General Electric Company Triac with gold diffused boundary
JPS5318380B2 (fr) * 1974-06-05 1978-06-14
GB1536545A (en) * 1975-03-26 1978-12-20 Mullard Ltd Semiconductor device manufacture
GB1499845A (en) * 1975-03-26 1978-02-01 Mullard Ltd Thyristors
US4063272A (en) * 1975-11-26 1977-12-13 General Electric Company Semiconductor device and method of manufacture thereof
GB1563421A (en) * 1975-12-18 1980-03-26 Gen Electric Polyimide-siloxane copolymer protective coating for semiconductor devices
JPS5346285A (en) * 1976-10-08 1978-04-25 Hitachi Ltd Mesa type high breakdown voltage semiconductor device
JPS56103447A (en) * 1980-01-22 1981-08-18 Toshiba Corp Dicing method of semiconductor wafer
US4814296A (en) * 1987-08-28 1989-03-21 Xerox Corporation Method of fabricating image sensor dies for use in assembling arrays
FR2666174B1 (fr) * 1990-08-21 1997-03-21 Sgs Thomson Microelectronics Composant semiconducteur haute tension a faible courant de fuite.
US5313094A (en) * 1992-01-28 1994-05-17 International Business Machines Corportion Thermal dissipation of integrated circuits using diamond paths
US5590460A (en) 1994-07-19 1997-01-07 Tessera, Inc. Method of making multilayer circuit
US5789302A (en) * 1997-03-24 1998-08-04 Siemens Aktiengesellschaft Crack stops
US6492201B1 (en) 1998-07-10 2002-12-10 Tessera, Inc. Forming microelectronic connection components by electrophoretic deposition
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DE2021691A1 (de) 1970-11-12
GB1314267A (en) 1973-04-18
SE369646B (fr) 1974-09-09
FR2044768A1 (fr) 1971-02-26
IE34131B1 (en) 1975-02-19
US3628106A (en) 1971-12-14
DE7016645U (de) 1973-11-08
BE749971A (fr) 1970-10-16
IE34131L (en) 1970-11-05

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