DE202014011574U1 - Multichipfeinkornintegrierte Spannungsregelung - Google Patents

Multichipfeinkornintegrierte Spannungsregelung Download PDF

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DE202014011574U1
DE202014011574U1 DE202014011574.5U DE202014011574U DE202014011574U1 DE 202014011574 U1 DE202014011574 U1 DE 202014011574U1 DE 202014011574 U DE202014011574 U DE 202014011574U DE 202014011574 U1 DE202014011574 U1 DE 202014011574U1
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passive
power
power consuming
passive device
power supply
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Apple Inc
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Apple Inc
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Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9595526B2 (en) 2013-08-09 2017-03-14 Apple Inc. Multi-die fine grain integrated voltage regulation
US10468381B2 (en) 2014-09-29 2019-11-05 Apple Inc. Wafer level integration of passive devices
US9971970B1 (en) * 2015-04-27 2018-05-15 Rigetti & Co, Inc. Microwave integrated quantum circuits with VIAS and methods for making the same
US9935076B1 (en) 2015-09-30 2018-04-03 Apple Inc. Structure and method for fabricating a computing system with an integrated voltage regulator module
JP2017084961A (ja) * 2015-10-28 2017-05-18 株式会社村田製作所 集積回路素子の実装構造
US10665579B2 (en) 2016-02-16 2020-05-26 Xilinx, Inc. Chip package assembly with power management integrated circuit and integrated circuit die
CN107369678A (zh) * 2016-05-13 2017-11-21 北京中电网信息技术有限公司 一种系统级封装方法及其封装单元
US11121301B1 (en) 2017-06-19 2021-09-14 Rigetti & Co, Inc. Microwave integrated quantum circuits with cap wafers and their methods of manufacture
US20190013301A1 (en) * 2017-07-04 2019-01-10 Intel Corporation Stacked dies with passive components within facing recesses
US10529407B2 (en) * 2017-07-20 2020-01-07 Samsung Electronics Co., Ltd. Memory device including a plurality of power rails and method of operating the same
US10535394B2 (en) * 2017-07-20 2020-01-14 Samsung Electronics Co., Ltd. Memory device including dynamic voltage and frequency scaling switch and method of operating the same
DE102017129611B4 (de) * 2017-12-12 2021-04-22 RF360 Europe GmbH Elektrische Vorrichtung mit zwei oder mehr Chipkomponenten
KR20200030411A (ko) 2018-09-12 2020-03-20 엘지이노텍 주식회사 연성 회로기판 및 이를 포함하는 칩 패키지, 및 이를 포함하는 전자 디바이스
US10756622B2 (en) 2018-12-24 2020-08-25 Apple Inc Power management system switched capacitor voltage regulator with integrated passive device
DE102019110716B3 (de) * 2019-04-25 2020-01-16 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit Leistungshalbleiterschaltern
US20200373224A1 (en) * 2019-05-21 2020-11-26 Microsoft Technology Licensing, Llc Through-silicon vias and decoupling capacitance
US11710726B2 (en) 2019-06-25 2023-07-25 Microsoft Technology Licensing, Llc Through-board power control arrangements for integrated circuit devices
KR20210017054A (ko) 2019-08-06 2021-02-17 삼성전자주식회사 멀티-코어 시스템 및 그 동작 제어 방법
US11537154B2 (en) 2020-12-09 2022-12-27 Samsung Electronics Co., Ltd. Mobile devices and methods controlling power in mobile devices
US20220367430A1 (en) * 2021-05-17 2022-11-17 Mediatek Inc. Semiconductor package structure

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4080590A (en) * 1976-03-31 1978-03-21 International Business Machines Corporation Capacitor storage memory
US5786979A (en) * 1995-12-18 1998-07-28 Douglass; Barry G. High density inter-chip connections by electromagnetic coupling
US6335566B1 (en) * 1999-06-17 2002-01-01 Hitachi, Ltd. Semiconductor device and an electronic device
US6532143B2 (en) * 2000-12-29 2003-03-11 Intel Corporation Multiple tier array capacitor
US6477034B1 (en) * 2001-10-03 2002-11-05 Intel Corporation Interposer substrate with low inductance capacitive paths
US7327554B2 (en) * 2003-03-19 2008-02-05 Ngk Spark Plug Co., Ltd. Assembly of semiconductor device, interposer and substrate
US7190210B2 (en) * 2004-03-25 2007-03-13 Integral Wave Technologies, Inc. Switched-capacitor power supply system and method
US7446389B2 (en) * 2004-06-17 2008-11-04 Apple Inc. Semiconductor die package with internal bypass capacitors
EP1878050A1 (en) * 2005-04-28 2008-01-16 Nxp B.V. Integrated circuit assembly with passive integration substrate for power and ground line routing on top of an integrated circuit chip
JP4546415B2 (ja) * 2005-09-01 2010-09-15 日本特殊陶業株式会社 配線基板、セラミックキャパシタ
US7692284B2 (en) * 2005-12-12 2010-04-06 Intel Corporation Package using array capacitor core
US7612984B2 (en) * 2006-11-01 2009-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Layout for capacitor pair with high capacitance matching
US20080128854A1 (en) * 2006-12-04 2008-06-05 Augustine Anne E Embedded array capacitor with top and bottom exterior surface metallization
US8264846B2 (en) * 2006-12-14 2012-09-11 Intel Corporation Ceramic package substrate with recessed device
US20080157343A1 (en) 2006-12-29 2008-07-03 Sriram Dattaguru Ceramic interposer with silicon voltage regulator and array capacitor combination for integrated circuit packages
JP4734282B2 (ja) * 2007-04-23 2011-07-27 株式会社日立製作所 半導体チップおよび半導体装置
US8395914B2 (en) * 2007-05-10 2013-03-12 Nxp B.V. DC-to-DC converter comprising a reconfigurable capacitor unit
US8476735B2 (en) * 2007-05-29 2013-07-02 Taiwan Semiconductor Manufacturing Company, Ltd. Programmable semiconductor interposer for electronic package and method of forming
JP4429346B2 (ja) * 2007-08-31 2010-03-10 富士通株式会社 半導体装置及びその製造方法
US7952160B2 (en) 2007-12-31 2011-05-31 Intel Corporation Packaged voltage regulator and inductor array
US8341434B2 (en) 2008-02-26 2012-12-25 International Business Machines Corporation Optimizing voltage on a power plane using a networked voltage regulation module array
EP2380415B1 (en) 2008-12-26 2019-07-31 QUALCOMM Incorporated Chip packages with power management integrated circuits and related techniques
US8242551B2 (en) * 2009-03-04 2012-08-14 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-insulator-metal structure for system-on-chip technology
US9607935B2 (en) * 2009-04-21 2017-03-28 Ati Technologies Ulc Semiconductor chip package with undermount passive devices
US8188786B2 (en) * 2009-09-24 2012-05-29 International Business Machines Corporation Modularized three-dimensional capacitor array
US8558345B2 (en) * 2009-11-09 2013-10-15 International Business Machines Corporation Integrated decoupling capacitor employing conductive through-substrate vias
US9048112B2 (en) 2010-06-29 2015-06-02 Qualcomm Incorporated Integrated voltage regulator with embedded passive device(s) for a stacked IC
US9064712B2 (en) * 2010-08-12 2015-06-23 Freescale Semiconductor Inc. Monolithic microwave integrated circuit
US8716855B2 (en) 2010-11-10 2014-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit system with distributed power supply comprising interposer and voltage regulator module
JP2012160693A (ja) * 2011-01-11 2012-08-23 Kyocera Corp 積層型半導体パッケージおよび積層型半導体装置
JP2012156184A (ja) * 2011-01-24 2012-08-16 Nec Corp 実装基板及びその製造方法
JP2013021269A (ja) * 2011-07-14 2013-01-31 Ngk Spark Plug Co Ltd 部品内蔵配線基板
US9337138B1 (en) * 2012-03-09 2016-05-10 Xilinx, Inc. Capacitors within an interposer coupled to supply and ground planes of a substrate
US20140135545A1 (en) 2012-11-12 2014-05-15 Uop Llc Fluid catalytic cracking process
US9496211B2 (en) * 2012-11-21 2016-11-15 Intel Corporation Logic die and other components embedded in build-up layers
US20140252547A1 (en) 2013-03-08 2014-09-11 Advanced Semiconductor Engineering, Inc. Semiconductor device having integrated passive device and process for manufacturing the same
US9595526B2 (en) 2013-08-09 2017-03-14 Apple Inc. Multi-die fine grain integrated voltage regulation

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EP3031081A2 (en) 2016-06-15
US10411012B2 (en) 2019-09-10
CN105474391A (zh) 2016-04-06
EP4006972A2 (en) 2022-06-01
TWI529875B (zh) 2016-04-11
WO2015020836A3 (en) 2015-04-09
US20170141116A1 (en) 2017-05-18
JP2016529719A (ja) 2016-09-23
KR101819838B1 (ko) 2018-01-17
US20200027881A1 (en) 2020-01-23
US9595526B2 (en) 2017-03-14
US10056384B2 (en) 2018-08-21
US20150041955A1 (en) 2015-02-12
TW201515165A (zh) 2015-04-16
US11063046B2 (en) 2021-07-13
JP6174260B2 (ja) 2017-08-02
US20180366466A1 (en) 2018-12-20
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KR20160041969A (ko) 2016-04-18
CN105474391B (zh) 2018-08-03

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