DE19983599T1 - Vierfachschicht-Riesenmagnetwiderstands-Sandwichstruktur - Google Patents

Vierfachschicht-Riesenmagnetwiderstands-Sandwichstruktur

Info

Publication number
DE19983599T1
DE19983599T1 DE19983599T DE19983599T DE19983599T1 DE 19983599 T1 DE19983599 T1 DE 19983599T1 DE 19983599 T DE19983599 T DE 19983599T DE 19983599 T DE19983599 T DE 19983599T DE 19983599 T1 DE19983599 T1 DE 19983599T1
Authority
DE
Germany
Prior art keywords
quadruple
sandwich structure
giant magnetoresistance
layer giant
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19983599T
Other languages
English (en)
Inventor
Brenda A Everitt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seagate Technology LLC
Original Assignee
Seagate Technology LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seagate Technology LLC filed Critical Seagate Technology LLC
Publication of DE19983599T1 publication Critical patent/DE19983599T1/de
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B2220/00—Record carriers by type
    • G11B2220/20—Disc-shaped record carriers
    • G11B2220/25—Disc-shaped record carriers characterised in that the disc is based on a specific recording technology
    • G11B2220/2508—Magnetic discs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
DE19983599T 1998-09-28 1999-09-28 Vierfachschicht-Riesenmagnetwiderstands-Sandwichstruktur Ceased DE19983599T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10218898P 1998-09-28 1998-09-28
PCT/US1999/022356 WO2000019226A1 (en) 1998-09-28 1999-09-28 Quad-layer gmr sandwich

Publications (1)

Publication Number Publication Date
DE19983599T1 true DE19983599T1 (de) 2001-08-09

Family

ID=22288584

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19983599T Ceased DE19983599T1 (de) 1998-09-28 1999-09-28 Vierfachschicht-Riesenmagnetwiderstands-Sandwichstruktur

Country Status (8)

Country Link
US (1) US6580587B1 (de)
JP (1) JP2002525889A (de)
KR (1) KR20010085831A (de)
CN (1) CN1138153C (de)
AU (1) AU6268599A (de)
DE (1) DE19983599T1 (de)
GB (1) GB2359412B (de)
WO (1) WO2000019226A1 (de)

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DE19924756A1 (de) * 1999-05-29 2000-11-30 Bosch Gmbh Robert Magnetoresistives Element
DE10203466A1 (de) * 2002-01-28 2003-08-14 Forschungszentrum Juelich Gmbh GMR-Sensoranordnung und synthetischer Anti-Ferromagnet dafür
DE10213941A1 (de) * 2002-03-28 2003-10-30 Bosch Gmbh Robert Sensorelement und Gradiometeranordnung, deren Verwendung zum Messen von Magnetfeldgradienten und Verfahren hierzu
US6785102B2 (en) 2002-04-18 2004-08-31 Hitachi Global Storage Technologies Netherlands B.V. Spin valve sensor with dual self-pinned AP pinned layer structures
US6801412B2 (en) 2002-04-19 2004-10-05 International Business Machines Corporation Method and apparatus for improved pinning strength for self-pinned giant magnetoresistive heads
US7061729B2 (en) * 2002-05-16 2006-06-13 International Business Machines Corporation Protective cap in lead overlay magnetic sensors
US6781798B2 (en) 2002-07-15 2004-08-24 International Business Machines Corporation CPP sensor with dual self-pinned AP pinned layer structures
US6819530B2 (en) * 2002-09-25 2004-11-16 International Business Machines Corporation Current perpendicular to the planes (CPP) sensor with free layer stabilized by current field
US7116530B2 (en) 2003-09-30 2006-10-03 Hitachi Global Storage Technologies Netherlands B.V. Thin differential spin valve sensor having both pinned and self pinned structures for reduced difficulty in AFM layer polarity setting
US7186470B2 (en) * 2004-02-11 2007-03-06 Hitachi Global Storage Technologies Netherlands B.V. Use of greater than about 15 angstrom thick coupling layer in AP-tab magnetic head
US7135859B2 (en) * 2004-04-06 2006-11-14 Murugesan Sethu Rotary and angular position sensing
JP4614061B2 (ja) * 2004-09-28 2011-01-19 ヤマハ株式会社 巨大磁気抵抗効果素子を用いた磁気センサ及び同磁気センサの製造方法
US20100001723A1 (en) * 2004-12-28 2010-01-07 Koninklijke Philips Electronics, N.V. Bridge type sensor with tunable characteristic
CN101223453A (zh) * 2005-07-21 2008-07-16 皇家飞利浦电子股份有限公司 包含磁阻系统的装置
FR2918761B1 (fr) * 2007-07-10 2009-11-06 Commissariat Energie Atomique Capteur de champ magnetique a faible bruit.
US8254066B2 (en) * 2008-12-30 2012-08-28 Hitachi Global Storage Technologies Netherlands B.V. Technique for measuring process induced magnetic anisotropy in a magnetoresistive sensor
CN102621504B (zh) * 2011-04-21 2013-09-04 江苏多维科技有限公司 单片参考全桥磁场传感器
US9411024B2 (en) * 2012-04-20 2016-08-09 Infineon Technologies Ag Magnetic field sensor having XMR elements in a full bridge circuit having diagonal elements sharing a same shape anisotropy
JP5447616B2 (ja) * 2012-08-07 2014-03-19 Ｔｄｋ株式会社 磁気センサの製造方法
US9230578B2 (en) * 2013-12-23 2016-01-05 HGST Netherlands B.V. Multiple readers for high resolution and SNR for high areal density application
WO2015107949A1 (ja) * 2014-01-15 2015-07-23 株式会社村田製作所 磁気センサ
WO2015107948A1 (ja) * 2014-01-15 2015-07-23 株式会社村田製作所 磁気センサ
EP3104187A1 (de) * 2015-06-09 2016-12-14 International Iberian Nanotechnology Laboratory Magnetoresistiver sensor
WO2018161146A1 (en) * 2017-03-10 2018-09-13 Simon Fraser University Magnetic coupling layers, structures comprising magnetic coupling layers and methods for fabricating and/or using same

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GB2248151A (en) * 1990-09-24 1992-03-25 Philips Electronic Associated Temperature sensing and protection circuit.
JP2637360B2 (ja) * 1992-10-30 1997-08-06 株式会社東芝 磁気抵抗効果素子
DE4243358A1 (de) 1992-12-21 1994-06-23 Siemens Ag Magnetowiderstands-Sensor mit künstlichem Antiferromagneten und Verfahren zu seiner Herstellung
DE4335826A1 (de) * 1993-10-20 1995-04-27 Siemens Ag Meßvorrichtung mit magnetoresistiven Sensoreinrichtungen in einer Brückenschaltung
EP0677750A3 (de) * 1994-04-15 1996-04-24 Hewlett Packard Co Riesenmagnetoresistiver Sensor mit isolierender Pinning-Lage.
US5583725A (en) * 1994-06-15 1996-12-10 International Business Machines Corporation Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor
US5561368A (en) * 1994-11-04 1996-10-01 International Business Machines Corporation Bridge circuit magnetic field sensor having spin valve magnetoresistive elements formed on common substrate
US5701222A (en) * 1995-09-11 1997-12-23 International Business Machines Corporation Spin valve sensor with antiparallel magnetization of pinned layers
DE19536433C2 (de) * 1995-09-29 1999-04-08 Siemens Ag Vorrichtung zur berührungslosen Positionserfassung eines Objektes und Verwendung der Vorrichtung
DE19614460A1 (de) * 1996-04-12 1997-10-16 Bosch Gmbh Robert Verfahren zur Herstellung eines GMR-Brückensensors sowie GMR-Brückensensor
DE19619806A1 (de) 1996-05-15 1997-11-20 Siemens Ag Magnetfeldempfindliche Sensoreinrichtung mit mehreren GMR-Sensorelementen
US6118284A (en) * 1996-10-04 2000-09-12 Ghoshal; Uttam S. High speed magnetic flux sampling
JPH10232242A (ja) * 1997-02-19 1998-09-02 Mitsubishi Electric Corp 検出装置
JPH11304413A (ja) * 1998-04-20 1999-11-05 Mitsubishi Electric Corp 磁気検出装置
US6191926B1 (en) * 1998-05-07 2001-02-20 Seagate Technology Llc Spin valve magnetoresistive sensor using permanent magnet biased artificial antiferromagnet layer
JP3448209B2 (ja) * 1998-05-08 2003-09-22 三菱電機株式会社 磁気検出装置
DE69934868T2 (de) * 1998-05-11 2007-10-18 Koninklijke Philips Electronics N.V. Magnetischer mehrschichtsensor
US6239595B1 (en) * 1998-05-13 2001-05-29 Mitsubishi Denki Kabushiki Kaisha Magnetic field sensing element
JP3623367B2 (ja) * 1998-07-17 2005-02-23 アルプス電気株式会社 巨大磁気抵抗効果素子を備えたポテンショメータ
DE19934009B4 (de) * 1998-07-21 2006-11-23 Alps Electric Co., Ltd. Magnetowiderstands-Dünnschichtelement vom Drehventil-Typ
US6175476B1 (en) * 1998-08-18 2001-01-16 Read-Rite Corporation Synthetic spin-valve device having high resistivity anti parallel coupling layer
FR2787197B1 (fr) * 1998-12-11 2001-02-23 Thomson Csf Capteur de champ magnetique a magnetoresistance geante
US6449134B1 (en) * 1999-08-05 2002-09-10 International Business Machines Corporation Read head with file resettable dual spin valve sensor
US6288552B1 (en) * 1999-10-29 2001-09-11 Daimlerchrysler Corporation GMR sensor tester for heated window grids
US6271997B1 (en) * 1999-11-22 2001-08-07 International Business Machines Corporation Read head spin valve sensor with triple antiparallel coupled free layer structure
US6407890B1 (en) * 2000-02-08 2002-06-18 International Business Machines Corporation Dual spin valve sensor read head with a specular reflector film embedded in each antiparallel (AP) pinned layer next to a spacer layer
JP3756757B2 (ja) * 2000-12-01 2006-03-15 アルプス電気株式会社 交換結合膜と、この交換結合膜を用いた磁気抵抗効果素子、ならびに前記磁気抵抗効果素子を用いた薄膜磁気ヘッド

Also Published As

Publication number Publication date
JP2002525889A (ja) 2002-08-13
GB2359412B (en) 2003-01-22
CN1138153C (zh) 2004-02-11
US6580587B1 (en) 2003-06-17
AU6268599A (en) 2000-04-17
GB0110028D0 (en) 2001-06-13
CN1320216A (zh) 2001-10-31
GB2359412A (en) 2001-08-22
WO2000019226A1 (en) 2000-04-06
KR20010085831A (ko) 2001-09-07

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

Owner name: SEAGATE TECHNOLOGY LLC, SCOTTS VALLEY, CALIF., US

8128 New person/name/address of the agent

Representative=s name: HENKEL, FEILER & HAENZEL, 81675 MUENCHEN

8131 Rejection