DE69934868D1 - Magnetischer mehrschichtsensor - Google Patents

Magnetischer mehrschichtsensor

Info

Publication number
DE69934868D1
DE69934868D1 DE69934868T DE69934868T DE69934868D1 DE 69934868 D1 DE69934868 D1 DE 69934868D1 DE 69934868 T DE69934868 T DE 69934868T DE 69934868 T DE69934868 T DE 69934868T DE 69934868 D1 DE69934868 D1 DE 69934868D1
Authority
DE
Germany
Prior art keywords
magnetic multilayer
multilayer sensor
sensor
magnetic
multilayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69934868T
Other languages
English (en)
Other versions
DE69934868T2 (de
Inventor
H Lenssen
E Kuiper
Freddy Roozeboom
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69934868D1 publication Critical patent/DE69934868D1/de
Publication of DE69934868T2 publication Critical patent/DE69934868T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/90—Magnetic feature

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Thin Magnetic Films (AREA)
DE69934868T 1998-05-11 1999-04-29 Magnetischer mehrschichtsensor Expired - Lifetime DE69934868T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP98201457 1998-05-11
EP98201457 1998-05-11
PCT/IB1999/000775 WO1999058994A1 (en) 1998-05-11 1999-04-29 Magnetic multilayer sensor

Publications (2)

Publication Number Publication Date
DE69934868D1 true DE69934868D1 (de) 2007-03-08
DE69934868T2 DE69934868T2 (de) 2007-10-18

Family

ID=8233678

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69934868T Expired - Lifetime DE69934868T2 (de) 1998-05-11 1999-04-29 Magnetischer mehrschichtsensor

Country Status (5)

Country Link
US (1) US6501271B1 (de)
EP (1) EP1012617B1 (de)
JP (1) JP4316806B2 (de)
DE (1) DE69934868T2 (de)
WO (1) WO1999058994A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000019226A1 (en) * 1998-09-28 2000-04-06 Seagate Technology Llc Quad-layer gmr sandwich
DE10009944A1 (de) * 2000-03-02 2001-09-13 Forschungszentrum Juelich Gmbh Anordnung zum Messen eines Magnetfeldes und Verfahren zum Herstellen einer Anordnung zum Messen eines Magnetfeldes
DE10105894A1 (de) * 2001-02-09 2002-09-05 Bosch Gmbh Robert Magnetisch sensitive Schichtanordnung
DE10128150C1 (de) * 2001-06-11 2003-01-23 Siemens Ag Magnetoresistives Sensorsystem
JP2007036274A (ja) * 2001-09-25 2007-02-08 Alps Electric Co Ltd 磁気検出素子の製造方法
JP3877998B2 (ja) * 2001-11-05 2007-02-07 株式会社山武 角度センサの温度情報検出装置および位置検出装置
DE10255327A1 (de) * 2002-11-27 2004-06-24 Robert Bosch Gmbh Magnetoresistives Sensorelement und Verfahren zur Reduktion des Winkelfehlers eines magnetoresistiven Sensorelements
DE10258860A1 (de) * 2002-12-17 2004-07-15 Robert Bosch Gmbh Magnetoresistives Schichtsystem und Sensorelement mit diesem Schichtsystem
JP2007518092A (ja) * 2004-01-07 2007-07-05 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 角度を決定する方法
US7593196B2 (en) * 2004-04-30 2009-09-22 Hitachi Global Storage Technologies Netherlands B.V. Method and apparatus for providing a magnetic read sensor having a thin pinning layer and improved magnetoresistive coefficient ΔR/R
US7872837B2 (en) 2004-04-30 2011-01-18 Hitachi Global Storage Technologies Netherlands B.V. Method and apparatus for providing a magnetic read sensor having a thin pinning layer and improved magnetoreistive coefficient
EP1762034A2 (de) * 2004-05-20 2007-03-14 ExxonMobil Upstream Research Company Logarithmische spektrumsendersignalform für die elektromagnetische vermessung mit geregelter quelle
KR20070060096A (ko) * 2004-09-27 2007-06-12 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 자기 센서
TWI278650B (en) 2004-09-28 2007-04-11 Yamaha Corp Magnetic sensor using giant magnetoresistive elements and method for manufacturing the same
JP4614061B2 (ja) * 2004-09-28 2011-01-19 ヤマハ株式会社 巨大磁気抵抗効果素子を用いた磁気センサ及び同磁気センサの製造方法
US20100001723A1 (en) * 2004-12-28 2010-01-07 Koninklijke Philips Electronics, N.V. Bridge type sensor with tunable characteristic
JP5500785B2 (ja) * 2008-05-14 2014-05-21 新科實業有限公司 磁気センサ
US8269486B2 (en) * 2008-11-12 2012-09-18 Infineon Technologies Ag Magnetic sensor system and method
DE102012005134B4 (de) * 2012-03-05 2015-10-08 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Spin-Ventil und Verwendung einer Vielzahl von Spin-Ventilen
US10718636B1 (en) 2012-04-11 2020-07-21 Louisiana Tech Research Corporation Magneto-resistive sensors
US9103654B1 (en) 2012-04-11 2015-08-11 Louisiana Tech University Research Foundation, A Division Of Louisiana Tech University Foundation, Inc. GMR nanowire sensors
US9784802B1 (en) 2012-04-11 2017-10-10 Louisiana Tech Research Corporation GMR nanowire sensors
US11169228B2 (en) 2019-08-27 2021-11-09 Western Digital Technologies, Inc. Magnetic sensor with serial resistor for asymmetric sensing field range

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3022023B2 (ja) * 1992-04-13 2000-03-15 株式会社日立製作所 磁気記録再生装置
DE4243358A1 (de) * 1992-12-21 1994-06-23 Siemens Ag Magnetowiderstands-Sensor mit künstlichem Antiferromagneten und Verfahren zu seiner Herstellung
US5465185A (en) * 1993-10-15 1995-11-07 International Business Machines Corporation Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor
KR100368848B1 (ko) * 1994-04-15 2003-04-03 코닌클리케 필립스 일렉트로닉스 엔.브이. 자계센서,이센서를구비하는장치및이센서를제조하는방법
US5583725A (en) * 1994-06-15 1996-12-10 International Business Machines Corporation Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor
US6057049A (en) * 1994-12-13 2000-05-02 Kabushiki Kaisha Toshiba Exchange coupling film and magnetoresistive element
JP3251214B2 (ja) * 1997-09-02 2002-01-28 株式会社オートネットワーク技術研究所 ランプ断線検出ユニットを介在させた車両の配線
US5898548A (en) * 1997-10-24 1999-04-27 International Business Machines Corporation Shielded magnetic tunnel junction magnetoresistive read head
US6137662A (en) * 1998-04-07 2000-10-24 Read-Rite Corporation Magnetoresistive sensor with pinned SAL
US6204071B1 (en) * 1999-09-30 2001-03-20 Headway Technologies, Inc. Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration

Also Published As

Publication number Publication date
EP1012617A1 (de) 2000-06-28
DE69934868T2 (de) 2007-10-18
JP2002514770A (ja) 2002-05-21
US6501271B1 (en) 2002-12-31
EP1012617B1 (de) 2007-01-17
WO1999058994A1 (en) 1999-11-18
JP4316806B2 (ja) 2009-08-19

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