DE1954694C3 - Signalspeicherplatte für eine Aufnahmeröhre mit einer Elektronenstrahlquelle und Verfahren zu ihrer Herstellung - Google Patents
Signalspeicherplatte für eine Aufnahmeröhre mit einer Elektronenstrahlquelle und Verfahren zu ihrer HerstellungInfo
- Publication number
- DE1954694C3 DE1954694C3 DE1954694A DE1954694A DE1954694C3 DE 1954694 C3 DE1954694 C3 DE 1954694C3 DE 1954694 A DE1954694 A DE 1954694A DE 1954694 A DE1954694 A DE 1954694A DE 1954694 C3 DE1954694 C3 DE 1954694C3
- Authority
- DE
- Germany
- Prior art keywords
- insulating layer
- layer
- storage disk
- signal storage
- depressions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003860 storage Methods 0.000 title claims description 45
- 238000010894 electron beam technology Methods 0.000 title claims description 32
- 238000000034 method Methods 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000010410 layer Substances 0.000 claims description 207
- 229910052751 metal Inorganic materials 0.000 claims description 67
- 239000002184 metal Substances 0.000 claims description 67
- 239000004065 semiconductor Substances 0.000 claims description 35
- 238000007740 vapor deposition Methods 0.000 claims description 14
- 230000007704 transition Effects 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 239000002344 surface layer Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 22
- 230000000873 masking effect Effects 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 230000005855 radiation Effects 0.000 description 9
- 230000002349 favourable effect Effects 0.000 description 7
- 239000003792 electrolyte Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910000464 lead oxide Inorganic materials 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- IHBMMJGTJFPEQY-UHFFFAOYSA-N sulfanylidene(sulfanylidenestibanylsulfanyl)stibane Chemical compound S=[Sb]S[Sb]=S IHBMMJGTJFPEQY-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OTRAYOBSWCVTIN-UHFFFAOYSA-N OB(O)O.OB(O)O.OB(O)O.OB(O)O.OB(O)O.N.N.N.N.N.N.N.N.N.N.N.N.N.N.N Chemical compound OB(O)O.OB(O)O.OB(O)O.OB(O)O.OB(O)O.N.N.N.N.N.N.N.N.N.N.N.N.N.N.N OTRAYOBSWCVTIN-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- LFAGQMCIGQNPJG-UHFFFAOYSA-N silver cyanide Chemical compound [Ag+].N#[C-] LFAGQMCIGQNPJG-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/233—Manufacture of photoelectric screens or charge-storage screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/026—Deposition thru hole in mask
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/05—Etch and refill
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/139—Schottky barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/917—Plural dopants of same conductivity type in same region
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Light Receiving Elements (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6816451A NL6816451A (US20020095090A1-20020718-M00002.png) | 1968-11-19 | 1968-11-19 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE1954694A1 DE1954694A1 (de) | 1970-06-11 |
| DE1954694B2 DE1954694B2 (de) | 1979-01-04 |
| DE1954694C3 true DE1954694C3 (de) | 1979-09-06 |
Family
ID=19805186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1954694A Expired DE1954694C3 (de) | 1968-11-19 | 1969-10-30 | Signalspeicherplatte für eine Aufnahmeröhre mit einer Elektronenstrahlquelle und Verfahren zu ihrer Herstellung |
Country Status (11)
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6816449A (US20020095090A1-20020718-M00002.png) * | 1968-11-19 | 1970-05-21 | ||
| DE1960705A1 (de) * | 1969-12-03 | 1971-06-09 | Siemens Ag | Target fuer ein Halbleiter-Dioden-Vidikon und dessen Herstellung |
| US3764865A (en) * | 1970-03-17 | 1973-10-09 | Rca Corp | Semiconductor devices having closely spaced contacts |
| NL7007171A (US20020095090A1-20020718-M00002.png) * | 1970-05-16 | 1971-11-18 | ||
| US3746908A (en) * | 1970-08-03 | 1973-07-17 | Gen Electric | Solid state light sensitive storage array |
| US3879714A (en) * | 1970-08-20 | 1975-04-22 | Siemens Ag | Method of recording information with a picture storage tube and reading without erasing the information |
| US3693003A (en) * | 1970-11-19 | 1972-09-19 | Gen Electric | Storage target for an electron-beam addressed read, write and erase memory |
| GB1355806A (en) * | 1970-12-09 | 1974-06-05 | Mullard Ltd | Methods of manufacturing a semiconductor device |
| US3748549A (en) * | 1972-03-29 | 1973-07-24 | Philips Corp | Resistive sea for camera tube employing silicon target with array of diodes |
| GB1444541A (en) * | 1972-09-22 | 1976-08-04 | Mullard Ltd | Radiation sensitive solid state devices |
| GB1380813A (en) * | 1972-10-03 | 1975-01-15 | English Electric Valve Co Ltd | Semiconductor devices |
| US3805126A (en) * | 1972-10-11 | 1974-04-16 | Westinghouse Electric Corp | Charge storage target and method of manufacture having a plurality of isolated charge storage sites |
| US3879631A (en) * | 1972-12-14 | 1975-04-22 | Westinghouse Electric Corp | Semiconductor target with region adjacent pn junction region shielded |
| US3787720A (en) * | 1973-03-28 | 1974-01-22 | Hughes Aircraft Co | Semiconductor vidicon and process for fabricating same |
| US3858231A (en) * | 1973-04-16 | 1974-12-31 | Ibm | Dielectrically isolated schottky barrier structure and method of forming the same |
| US3893157A (en) * | 1973-06-04 | 1975-07-01 | Signetics Corp | Semiconductor target with integral beam shield |
| US4051406A (en) * | 1974-01-02 | 1977-09-27 | Princeton Electronic Products, Inc. | Electronic storage tube target having a radiation insensitive layer |
| US3980915A (en) * | 1974-02-27 | 1976-09-14 | Texas Instruments Incorporated | Metal-semiconductor diode infrared detector having semi-transparent electrode |
| US5661773A (en) * | 1992-03-19 | 1997-08-26 | Wisconsin Alumni Research Foundation | Interface for radiation therapy machine |
| US5317616A (en) * | 1992-03-19 | 1994-05-31 | Wisconsin Alumni Research Foundation | Method and apparatus for radiation therapy |
| WO1994029882A1 (en) * | 1993-06-09 | 1994-12-22 | Wisconsin Alumni Research Foundation | Dynamic beam flattening apparatus for radiation therapy |
| DE69425762T2 (de) * | 1993-06-09 | 2001-04-26 | Wisconsin Alumni Res Found | System zur Strahlungstherapie |
| CN1959120A (zh) * | 2006-11-07 | 2007-05-09 | 杨学实 | 电动航空压缩机 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3398317A (en) * | 1965-01-12 | 1968-08-20 | Stanford Research Inst | Information storage tube |
| US3430213A (en) * | 1965-01-22 | 1969-02-25 | Stanford Research Inst | Data storage and logic device |
| US3403284A (en) * | 1966-12-29 | 1968-09-24 | Bell Telephone Labor Inc | Target structure storage device using diode array |
| US3467880A (en) * | 1967-08-21 | 1969-09-16 | Bell Telephone Labor Inc | Multiple-image electron beam tube and color camera |
| US3428850A (en) * | 1967-09-12 | 1969-02-18 | Bell Telephone Labor Inc | Cathode ray storage devices |
| US3483421A (en) * | 1968-02-28 | 1969-12-09 | Goodyear Aerospace Corp | Electronic area correlator tube |
-
1968
- 1968-11-19 NL NL6816451A patent/NL6816451A/xx unknown
-
1969
- 1969-10-30 DE DE1954694A patent/DE1954694C3/de not_active Expired
- 1969-11-10 US US875232A patent/US3564309A/en not_active Expired - Lifetime
- 1969-11-14 GB GB55849/69A patent/GB1283960A/en not_active Expired
- 1969-11-14 CH CH1700669A patent/CH502693A/de not_active IP Right Cessation
- 1969-11-17 SE SE15744/69A patent/SE358510B/xx unknown
- 1969-11-17 AT AT1071269A patent/AT303841B/de not_active IP Right Cessation
- 1969-11-17 ES ES373603A patent/ES373603A1/es not_active Expired
- 1969-11-18 JP JP9204769A patent/JPS486284B1/ja active Pending
- 1969-11-18 BE BE741869D patent/BE741869A/xx unknown
- 1969-11-19 FR FR6939815A patent/FR2023648A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US3564309A (en) | 1971-02-16 |
| JPS486284B1 (US20020095090A1-20020718-M00002.png) | 1973-02-24 |
| DE1954694B2 (de) | 1979-01-04 |
| GB1283960A (en) | 1972-08-02 |
| ES373603A1 (es) | 1972-05-16 |
| SE358510B (US20020095090A1-20020718-M00002.png) | 1973-07-30 |
| FR2023648A1 (US20020095090A1-20020718-M00002.png) | 1970-08-21 |
| DE1954694A1 (de) | 1970-06-11 |
| NL6816451A (US20020095090A1-20020718-M00002.png) | 1970-05-21 |
| CH502693A (de) | 1971-01-31 |
| BE741869A (US20020095090A1-20020718-M00002.png) | 1970-05-19 |
| AT303841B (de) | 1972-12-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |