DE1951968A1 - AEtzloesung zur selektiven Musterzeugung in duennen Siliziumdioxydschichten - Google Patents

AEtzloesung zur selektiven Musterzeugung in duennen Siliziumdioxydschichten

Info

Publication number
DE1951968A1
DE1951968A1 DE19691951968 DE1951968A DE1951968A1 DE 1951968 A1 DE1951968 A1 DE 1951968A1 DE 19691951968 DE19691951968 DE 19691951968 DE 1951968 A DE1951968 A DE 1951968A DE 1951968 A1 DE1951968 A1 DE 1951968A1
Authority
DE
Germany
Prior art keywords
etching solution
silicon dioxide
layers
pattern generation
thin silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19691951968
Other languages
German (de)
English (en)
Inventor
Uwe Pless
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Intellectual Property and Standards GmbH
Original Assignee
Philips Patentverwaltung GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Patentverwaltung GmbH filed Critical Philips Patentverwaltung GmbH
Priority to DE19691951968 priority Critical patent/DE1951968A1/de
Priority to NL7014891A priority patent/NL7014891A/xx
Priority to JP45088886A priority patent/JPS5013113B1/ja
Priority to SE13774/70A priority patent/SE357214B/xx
Priority to GB4833370A priority patent/GB1320560A/en
Priority to FR7036892A priority patent/FR2064339B1/fr
Priority to BE70@@@@@@@@A priority patent/BE757512A/xx
Priority to US81523A priority patent/US3671437A/en
Publication of DE1951968A1 publication Critical patent/DE1951968A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H10P50/283—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Silicon Compounds (AREA)
  • Hall/Mr Elements (AREA)
DE19691951968 1969-10-15 1969-10-15 AEtzloesung zur selektiven Musterzeugung in duennen Siliziumdioxydschichten Ceased DE1951968A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE19691951968 DE1951968A1 (de) 1969-10-15 1969-10-15 AEtzloesung zur selektiven Musterzeugung in duennen Siliziumdioxydschichten
NL7014891A NL7014891A (OSRAM) 1969-10-15 1970-10-10
JP45088886A JPS5013113B1 (OSRAM) 1969-10-15 1970-10-12
SE13774/70A SE357214B (OSRAM) 1969-10-15 1970-10-12
GB4833370A GB1320560A (en) 1969-10-15 1970-10-12 Etchants for silica
FR7036892A FR2064339B1 (OSRAM) 1969-10-15 1970-10-13
BE70@@@@@@@@A BE757512A (fr) 1969-10-15 1970-10-14 Agent pour la realisation de configurations dans de minces couches en dioxyde de silicium par decapage selectif et son procede de preparation
US81523A US3671437A (en) 1969-10-15 1970-10-16 Etchant for selectively etching patterns in thin silicon dioxide layers and method of preparing such an etchant

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691951968 DE1951968A1 (de) 1969-10-15 1969-10-15 AEtzloesung zur selektiven Musterzeugung in duennen Siliziumdioxydschichten

Publications (1)

Publication Number Publication Date
DE1951968A1 true DE1951968A1 (de) 1971-04-22

Family

ID=5748277

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691951968 Ceased DE1951968A1 (de) 1969-10-15 1969-10-15 AEtzloesung zur selektiven Musterzeugung in duennen Siliziumdioxydschichten

Country Status (8)

Country Link
US (1) US3671437A (OSRAM)
JP (1) JPS5013113B1 (OSRAM)
BE (1) BE757512A (OSRAM)
DE (1) DE1951968A1 (OSRAM)
FR (1) FR2064339B1 (OSRAM)
GB (1) GB1320560A (OSRAM)
NL (1) NL7014891A (OSRAM)
SE (1) SE357214B (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1423448A (en) * 1973-07-18 1976-02-04 Plessey Co Ltd Method of selectively etching silicon nitride
US3920471A (en) * 1974-10-10 1975-11-18 Teletype Corp Prevention of aluminum etching during silox photoshaping
US4022424A (en) * 1975-09-29 1977-05-10 General Electric Company Shaft bearing and seals for butterfly valves
US4548791A (en) * 1983-09-30 1985-10-22 American Chemical & Refining Company, Inc. Thallium-containing composition for stripping palladium
US5277835A (en) * 1989-06-26 1994-01-11 Hashimoto Chemical Industries Co., Ltd. Surface treatment agent for fine surface treatment
US5695661A (en) 1995-06-07 1997-12-09 Micron Display Technology, Inc. Silicon dioxide etch process which protects metal
US6074951A (en) * 1997-05-29 2000-06-13 International Business Machines Corporation Vapor phase etching of oxide masked by resist or masking material
US5838055A (en) * 1997-05-29 1998-11-17 International Business Machines Corporation Trench sidewall patterned by vapor phase etching
US5876879A (en) * 1997-05-29 1999-03-02 International Business Machines Corporation Oxide layer patterned by vapor phase etching
JP3678212B2 (ja) * 2002-05-20 2005-08-03 ウシオ電機株式会社 超高圧水銀ランプ
US8226840B2 (en) * 2008-05-02 2012-07-24 Micron Technology, Inc. Methods of removing silicon dioxide
WO2021195701A1 (en) * 2020-03-31 2021-10-07 The University Of Sydney Aligned fibres and a method of making the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1002026A (fr) * 1946-07-16 1952-03-03 Standard Francaise Petroles Procédé d'inhibition de l'action corrosive des acides halogencs et notamment de l'acide chlorhydrique vis-à-vis des métaux
US3474021A (en) * 1966-01-12 1969-10-21 Ibm Method of forming openings using sequential sputtering and chemical etching

Also Published As

Publication number Publication date
GB1320560A (en) 1973-06-13
NL7014891A (OSRAM) 1971-04-19
FR2064339A1 (OSRAM) 1971-07-23
US3671437A (en) 1972-06-20
JPS5013113B1 (OSRAM) 1975-05-16
BE757512A (fr) 1971-04-14
SE357214B (OSRAM) 1973-06-18
FR2064339B1 (OSRAM) 1977-01-21

Similar Documents

Publication Publication Date Title
DE1951968A1 (de) AEtzloesung zur selektiven Musterzeugung in duennen Siliziumdioxydschichten
DE1614306C3 (de) Verfahren zur Herstellung elektrischer Anschlüsse auf einer Oberfläche eines elektronischen Bauelementes und durch Anwendung dieses Verfahrens hergestelltes Bauelement
DE102005038414A1 (de) Stabilisierte Ätzlösungen zum Ätzen von Cu- und Cu/Ni-Schicht
DE2313106A1 (de) Verfahren zum herstellen eines elektrischen verbindungssystems
EP0884772B1 (de) Verfahren zum Ätzen von Halbleiterscheiben
DE2917235A1 (de) Verfahren zum ausbilden von festhaftenden und gleichfoermigen isolationsschichten auf kornorientiertem siliciumstahlblech
DE3842758A1 (de) Verfahren zum aetzen einer dreilagigen verdrahtungsebene bei der herstellung integrierter halbleiterschaltungen
DE3411960A1 (de) Verfahren zur selbstausrichtung einer doppelten schicht aus polykristallinem silicium mittels oxydation in einer integrierten schaltung
DE747964C (de) Herstellung von Elektrodengittern fuer Bleisammler mit verbessertem Modul Bruchbelastung/Einheitsdehnung
DE2427300C2 (de) Verfahren zur Herstellung einer ternären Legierung aus Blei, Calcium und Aluminium
DE2458079A1 (de) Verfahren zur herstellung eines magnetkopfes
DE1614569A1 (de) Verfahren zum Herstellen einer aus Silisiumnitrid bestehenden Schutzschicht an der Oberflaeche eines Halbleiterkoerpers
DE519162C (de) Elektrisches Ventil mit zwischen Elektroden angeordneter fester Ventilschicht
DE3237604A1 (de) Dichtungsmaterial
DE2057204C3 (de) Verfahren zur Herstellung von Metall-Halbleiterkontakten
DE720445C (de) Verfahren zur Herstellung von Trockenplattengleichrichtern mit einem Leichtmetall als Grundelektrodenmaterial und nach diesem Verfahren hergestellter Trockenplattengleichrichter
DE1193253B (de) Verfahren zur Verbesserung des Formfuellungs-vermoegens und der Korrosionsbestaendigkeit bei anodischer Polarisation in Schwefelsaeure einer fuer gegossene Gitterplattenvon Blei-akkumulatoren zu verwendenden Blei-Antimon-Legierung
DE497474C (de) Elektrisches Ventil
DE2529865C2 (de) Wäßrige Ätzlösung zum selektiven Ätzen von Siliciumdioxidschichten auf Halbleiterkörpern
DE533486C (de) Elektrische Gleichrichterzelle
DE102006008261A1 (de) Ätzlösung und Verfahren zur Strukturierung eines UBM-Schichtsystems
AT265802B (de) Verfahren zur dekorativen Oberflächenbehandlung von zumindestens oberflächlich aus Aluminium bestehenden Gegenständen
DE512818C (de) Verfahren zur Herstellung eines Gleichrichterelementes
DE2448778C2 (de) Trennmittel zum Glühen von Siliziumstahlblech oder -band
DE2454412A1 (de) Verfahren zum dotieren eines halbleiterkoerpers durch diffusion aus der gasphase

Legal Events

Date Code Title Description
8131 Rejection