BE757512A - Agent pour la realisation de configurations dans de minces couches en dioxyde de silicium par decapage selectif et son procede de preparation - Google Patents
Agent pour la realisation de configurations dans de minces couches en dioxyde de silicium par decapage selectif et son procede de preparationInfo
- Publication number
- BE757512A BE757512A BE70@@@@@@@@A BE757512DA BE757512A BE 757512 A BE757512 A BE 757512A BE 757512D A BE757512D A BE 757512DA BE 757512 A BE757512 A BE 757512A
- Authority
- BE
- Belgium
- Prior art keywords
- realization
- configurations
- agent
- silicon dioxide
- preparation process
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 2
- 239000003795 chemical substances by application Substances 0.000 title 1
- 238000005554 pickling Methods 0.000 title 1
- 238000002360 preparation method Methods 0.000 title 1
- 235000012239 silicon dioxide Nutrition 0.000 title 1
- 239000000377 silicon dioxide Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Hall/Mr Elements (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691951968 DE1951968A1 (de) | 1969-10-15 | 1969-10-15 | AEtzloesung zur selektiven Musterzeugung in duennen Siliziumdioxydschichten |
Publications (1)
Publication Number | Publication Date |
---|---|
BE757512A true BE757512A (fr) | 1971-04-14 |
Family
ID=5748277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE70@@@@@@@@A BE757512A (fr) | 1969-10-15 | 1970-10-14 | Agent pour la realisation de configurations dans de minces couches en dioxyde de silicium par decapage selectif et son procede de preparation |
Country Status (8)
Country | Link |
---|---|
US (1) | US3671437A (xx) |
JP (1) | JPS5013113B1 (xx) |
BE (1) | BE757512A (xx) |
DE (1) | DE1951968A1 (xx) |
FR (1) | FR2064339B1 (xx) |
GB (1) | GB1320560A (xx) |
NL (1) | NL7014891A (xx) |
SE (1) | SE357214B (xx) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1423448A (en) * | 1973-07-18 | 1976-02-04 | Plessey Co Ltd | Method of selectively etching silicon nitride |
US3920471A (en) * | 1974-10-10 | 1975-11-18 | Teletype Corp | Prevention of aluminum etching during silox photoshaping |
US4022424A (en) * | 1975-09-29 | 1977-05-10 | General Electric Company | Shaft bearing and seals for butterfly valves |
US4548791A (en) * | 1983-09-30 | 1985-10-22 | American Chemical & Refining Company, Inc. | Thallium-containing composition for stripping palladium |
US5277835A (en) * | 1989-06-26 | 1994-01-11 | Hashimoto Chemical Industries Co., Ltd. | Surface treatment agent for fine surface treatment |
US5695661A (en) | 1995-06-07 | 1997-12-09 | Micron Display Technology, Inc. | Silicon dioxide etch process which protects metal |
US5876879A (en) * | 1997-05-29 | 1999-03-02 | International Business Machines Corporation | Oxide layer patterned by vapor phase etching |
US6074951A (en) * | 1997-05-29 | 2000-06-13 | International Business Machines Corporation | Vapor phase etching of oxide masked by resist or masking material |
US5838055A (en) * | 1997-05-29 | 1998-11-17 | International Business Machines Corporation | Trench sidewall patterned by vapor phase etching |
JP3678212B2 (ja) * | 2002-05-20 | 2005-08-03 | ウシオ電機株式会社 | 超高圧水銀ランプ |
US8226840B2 (en) | 2008-05-02 | 2012-07-24 | Micron Technology, Inc. | Methods of removing silicon dioxide |
US20230138566A1 (en) * | 2020-03-31 | 2023-05-04 | The University Of Sydney | Aligned fibres and a method of making the same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1002026A (fr) * | 1946-07-16 | 1952-03-03 | Standard Francaise Petroles | Procédé d'inhibition de l'action corrosive des acides halogencs et notamment de l'acide chlorhydrique vis-à-vis des métaux |
US3474021A (en) * | 1966-01-12 | 1969-10-21 | Ibm | Method of forming openings using sequential sputtering and chemical etching |
-
1969
- 1969-10-15 DE DE19691951968 patent/DE1951968A1/de not_active Ceased
-
1970
- 1970-10-10 NL NL7014891A patent/NL7014891A/xx unknown
- 1970-10-12 SE SE13774/70A patent/SE357214B/xx unknown
- 1970-10-12 GB GB4833370A patent/GB1320560A/en not_active Expired
- 1970-10-12 JP JP45088886A patent/JPS5013113B1/ja active Pending
- 1970-10-13 FR FR7036892A patent/FR2064339B1/fr not_active Expired
- 1970-10-14 BE BE70@@@@@@@@A patent/BE757512A/xx unknown
- 1970-10-16 US US81523A patent/US3671437A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US3671437A (en) | 1972-06-20 |
NL7014891A (xx) | 1971-04-19 |
FR2064339A1 (xx) | 1971-07-23 |
DE1951968A1 (de) | 1971-04-22 |
GB1320560A (en) | 1973-06-13 |
JPS5013113B1 (xx) | 1975-05-16 |
FR2064339B1 (xx) | 1977-01-21 |
SE357214B (xx) | 1973-06-18 |
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