NL7014891A - - Google Patents

Info

Publication number
NL7014891A
NL7014891A NL7014891A NL7014891A NL7014891A NL 7014891 A NL7014891 A NL 7014891A NL 7014891 A NL7014891 A NL 7014891A NL 7014891 A NL7014891 A NL 7014891A NL 7014891 A NL7014891 A NL 7014891A
Authority
NL
Netherlands
Application number
NL7014891A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7014891A publication Critical patent/NL7014891A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Hall/Mr Elements (AREA)
  • Silicon Compounds (AREA)
NL7014891A 1969-10-15 1970-10-10 NL7014891A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691951968 DE1951968A1 (de) 1969-10-15 1969-10-15 AEtzloesung zur selektiven Musterzeugung in duennen Siliziumdioxydschichten

Publications (1)

Publication Number Publication Date
NL7014891A true NL7014891A (xx) 1971-04-19

Family

ID=5748277

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7014891A NL7014891A (xx) 1969-10-15 1970-10-10

Country Status (8)

Country Link
US (1) US3671437A (xx)
JP (1) JPS5013113B1 (xx)
BE (1) BE757512A (xx)
DE (1) DE1951968A1 (xx)
FR (1) FR2064339B1 (xx)
GB (1) GB1320560A (xx)
NL (1) NL7014891A (xx)
SE (1) SE357214B (xx)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1423448A (en) * 1973-07-18 1976-02-04 Plessey Co Ltd Method of selectively etching silicon nitride
US3920471A (en) * 1974-10-10 1975-11-18 Teletype Corp Prevention of aluminum etching during silox photoshaping
US4022424A (en) * 1975-09-29 1977-05-10 General Electric Company Shaft bearing and seals for butterfly valves
US4548791A (en) * 1983-09-30 1985-10-22 American Chemical & Refining Company, Inc. Thallium-containing composition for stripping palladium
US5277835A (en) * 1989-06-26 1994-01-11 Hashimoto Chemical Industries Co., Ltd. Surface treatment agent for fine surface treatment
US5695661A (en) 1995-06-07 1997-12-09 Micron Display Technology, Inc. Silicon dioxide etch process which protects metal
US5876879A (en) * 1997-05-29 1999-03-02 International Business Machines Corporation Oxide layer patterned by vapor phase etching
US6074951A (en) * 1997-05-29 2000-06-13 International Business Machines Corporation Vapor phase etching of oxide masked by resist or masking material
US5838055A (en) * 1997-05-29 1998-11-17 International Business Machines Corporation Trench sidewall patterned by vapor phase etching
JP3678212B2 (ja) * 2002-05-20 2005-08-03 ウシオ電機株式会社 超高圧水銀ランプ
US8226840B2 (en) 2008-05-02 2012-07-24 Micron Technology, Inc. Methods of removing silicon dioxide
US20230138566A1 (en) * 2020-03-31 2023-05-04 The University Of Sydney Aligned fibres and a method of making the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1002026A (fr) * 1946-07-16 1952-03-03 Standard Francaise Petroles Procédé d'inhibition de l'action corrosive des acides halogencs et notamment de l'acide chlorhydrique vis-à-vis des métaux
US3474021A (en) * 1966-01-12 1969-10-21 Ibm Method of forming openings using sequential sputtering and chemical etching

Also Published As

Publication number Publication date
US3671437A (en) 1972-06-20
FR2064339A1 (xx) 1971-07-23
DE1951968A1 (de) 1971-04-22
GB1320560A (en) 1973-06-13
JPS5013113B1 (xx) 1975-05-16
FR2064339B1 (xx) 1977-01-21
BE757512A (fr) 1971-04-14
SE357214B (xx) 1973-06-18

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