SE357214B - - Google Patents

Info

Publication number
SE357214B
SE357214B SE13774/70A SE1377470A SE357214B SE 357214 B SE357214 B SE 357214B SE 13774/70 A SE13774/70 A SE 13774/70A SE 1377470 A SE1377470 A SE 1377470A SE 357214 B SE357214 B SE 357214B
Authority
SE
Sweden
Application number
SE13774/70A
Inventor
U Pless
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE357214B publication Critical patent/SE357214B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means
SE13774/70A 1969-10-15 1970-10-12 SE357214B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691951968 DE1951968A1 (de) 1969-10-15 1969-10-15 AEtzloesung zur selektiven Musterzeugung in duennen Siliziumdioxydschichten

Publications (1)

Publication Number Publication Date
SE357214B true SE357214B (xx) 1973-06-18

Family

ID=5748277

Family Applications (1)

Application Number Title Priority Date Filing Date
SE13774/70A SE357214B (xx) 1969-10-15 1970-10-12

Country Status (8)

Country Link
US (1) US3671437A (xx)
JP (1) JPS5013113B1 (xx)
BE (1) BE757512A (xx)
DE (1) DE1951968A1 (xx)
FR (1) FR2064339B1 (xx)
GB (1) GB1320560A (xx)
NL (1) NL7014891A (xx)
SE (1) SE357214B (xx)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1423448A (en) * 1973-07-18 1976-02-04 Plessey Co Ltd Method of selectively etching silicon nitride
US3920471A (en) * 1974-10-10 1975-11-18 Teletype Corp Prevention of aluminum etching during silox photoshaping
US4022424A (en) * 1975-09-29 1977-05-10 General Electric Company Shaft bearing and seals for butterfly valves
US4548791A (en) * 1983-09-30 1985-10-22 American Chemical & Refining Company, Inc. Thallium-containing composition for stripping palladium
US5277835A (en) * 1989-06-26 1994-01-11 Hashimoto Chemical Industries Co., Ltd. Surface treatment agent for fine surface treatment
US5695661A (en) 1995-06-07 1997-12-09 Micron Display Technology, Inc. Silicon dioxide etch process which protects metal
US6074951A (en) * 1997-05-29 2000-06-13 International Business Machines Corporation Vapor phase etching of oxide masked by resist or masking material
US5876879A (en) * 1997-05-29 1999-03-02 International Business Machines Corporation Oxide layer patterned by vapor phase etching
US5838055A (en) * 1997-05-29 1998-11-17 International Business Machines Corporation Trench sidewall patterned by vapor phase etching
JP3678212B2 (ja) * 2002-05-20 2005-08-03 ウシオ電機株式会社 超高圧水銀ランプ
US8226840B2 (en) 2008-05-02 2012-07-24 Micron Technology, Inc. Methods of removing silicon dioxide
KR20230002523A (ko) * 2020-03-31 2023-01-05 더 유니버시티 오브 시드니 정렬된 섬유 및 그의 제조방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1002026A (fr) * 1946-07-16 1952-03-03 Standard Francaise Petroles Procédé d'inhibition de l'action corrosive des acides halogencs et notamment de l'acide chlorhydrique vis-à-vis des métaux
US3474021A (en) * 1966-01-12 1969-10-21 Ibm Method of forming openings using sequential sputtering and chemical etching

Also Published As

Publication number Publication date
GB1320560A (en) 1973-06-13
US3671437A (en) 1972-06-20
DE1951968A1 (de) 1971-04-22
FR2064339A1 (xx) 1971-07-23
FR2064339B1 (xx) 1977-01-21
BE757512A (fr) 1971-04-14
NL7014891A (xx) 1971-04-19
JPS5013113B1 (xx) 1975-05-16

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