SE357214B - - Google Patents
Info
- Publication number
- SE357214B SE357214B SE13774/70A SE1377470A SE357214B SE 357214 B SE357214 B SE 357214B SE 13774/70 A SE13774/70 A SE 13774/70A SE 1377470 A SE1377470 A SE 1377470A SE 357214 B SE357214 B SE 357214B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691951968 DE1951968A1 (de) | 1969-10-15 | 1969-10-15 | AEtzloesung zur selektiven Musterzeugung in duennen Siliziumdioxydschichten |
Publications (1)
Publication Number | Publication Date |
---|---|
SE357214B true SE357214B (xx) | 1973-06-18 |
Family
ID=5748277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE13774/70A SE357214B (xx) | 1969-10-15 | 1970-10-12 |
Country Status (8)
Country | Link |
---|---|
US (1) | US3671437A (xx) |
JP (1) | JPS5013113B1 (xx) |
BE (1) | BE757512A (xx) |
DE (1) | DE1951968A1 (xx) |
FR (1) | FR2064339B1 (xx) |
GB (1) | GB1320560A (xx) |
NL (1) | NL7014891A (xx) |
SE (1) | SE357214B (xx) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1423448A (en) * | 1973-07-18 | 1976-02-04 | Plessey Co Ltd | Method of selectively etching silicon nitride |
US3920471A (en) * | 1974-10-10 | 1975-11-18 | Teletype Corp | Prevention of aluminum etching during silox photoshaping |
US4022424A (en) * | 1975-09-29 | 1977-05-10 | General Electric Company | Shaft bearing and seals for butterfly valves |
US4548791A (en) * | 1983-09-30 | 1985-10-22 | American Chemical & Refining Company, Inc. | Thallium-containing composition for stripping palladium |
US5277835A (en) * | 1989-06-26 | 1994-01-11 | Hashimoto Chemical Industries Co., Ltd. | Surface treatment agent for fine surface treatment |
US5695661A (en) | 1995-06-07 | 1997-12-09 | Micron Display Technology, Inc. | Silicon dioxide etch process which protects metal |
US6074951A (en) * | 1997-05-29 | 2000-06-13 | International Business Machines Corporation | Vapor phase etching of oxide masked by resist or masking material |
US5876879A (en) * | 1997-05-29 | 1999-03-02 | International Business Machines Corporation | Oxide layer patterned by vapor phase etching |
US5838055A (en) * | 1997-05-29 | 1998-11-17 | International Business Machines Corporation | Trench sidewall patterned by vapor phase etching |
JP3678212B2 (ja) * | 2002-05-20 | 2005-08-03 | ウシオ電機株式会社 | 超高圧水銀ランプ |
US8226840B2 (en) | 2008-05-02 | 2012-07-24 | Micron Technology, Inc. | Methods of removing silicon dioxide |
KR20230002523A (ko) * | 2020-03-31 | 2023-01-05 | 더 유니버시티 오브 시드니 | 정렬된 섬유 및 그의 제조방법 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1002026A (fr) * | 1946-07-16 | 1952-03-03 | Standard Francaise Petroles | Procédé d'inhibition de l'action corrosive des acides halogencs et notamment de l'acide chlorhydrique vis-à-vis des métaux |
US3474021A (en) * | 1966-01-12 | 1969-10-21 | Ibm | Method of forming openings using sequential sputtering and chemical etching |
-
1969
- 1969-10-15 DE DE19691951968 patent/DE1951968A1/de not_active Ceased
-
1970
- 1970-10-10 NL NL7014891A patent/NL7014891A/xx unknown
- 1970-10-12 JP JP45088886A patent/JPS5013113B1/ja active Pending
- 1970-10-12 GB GB4833370A patent/GB1320560A/en not_active Expired
- 1970-10-12 SE SE13774/70A patent/SE357214B/xx unknown
- 1970-10-13 FR FR7036892A patent/FR2064339B1/fr not_active Expired
- 1970-10-14 BE BE70@@@@@@@@A patent/BE757512A/xx unknown
- 1970-10-16 US US81523A patent/US3671437A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB1320560A (en) | 1973-06-13 |
US3671437A (en) | 1972-06-20 |
DE1951968A1 (de) | 1971-04-22 |
FR2064339A1 (xx) | 1971-07-23 |
FR2064339B1 (xx) | 1977-01-21 |
BE757512A (fr) | 1971-04-14 |
NL7014891A (xx) | 1971-04-19 |
JPS5013113B1 (xx) | 1975-05-16 |