DE1934866A1 - Halbleiterbauelement - Google Patents
HalbleiterbauelementInfo
- Publication number
- DE1934866A1 DE1934866A1 DE19691934866 DE1934866A DE1934866A1 DE 1934866 A1 DE1934866 A1 DE 1934866A1 DE 19691934866 DE19691934866 DE 19691934866 DE 1934866 A DE1934866 A DE 1934866A DE 1934866 A1 DE1934866 A1 DE 1934866A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- junction
- semiconductor
- conductivity
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 230000007704 transition Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 5
- 230000015556 catabolic process Effects 0.000 description 10
- 230000005684 electric field Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000007373 indentation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000003607 modifier Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000254 damaging effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 210000004072 lung Anatomy 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US75020368A | 1968-08-05 | 1968-08-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1934866A1 true DE1934866A1 (de) | 1970-05-14 |
Family
ID=25016935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19691934866 Pending DE1934866A1 (de) | 1968-08-05 | 1969-07-09 | Halbleiterbauelement |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS501633B1 (enrdf_load_stackoverflow) |
| DE (1) | DE1934866A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2015064B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1280491A (enrdf_load_stackoverflow) |
| NL (1) | NL6911843A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2719219A1 (de) * | 1977-03-08 | 1978-09-14 | Tokyo Shibaura Electric Co | Halbleitervorrichtung |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH589942A5 (enrdf_load_stackoverflow) * | 1975-09-09 | 1977-07-29 | Bbc Brown Boveri & Cie | |
| JPS62162269U (enrdf_load_stackoverflow) * | 1986-03-31 | 1987-10-15 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3187241A (en) * | 1957-03-27 | 1965-06-01 | Rca Corp | Transistor with emitter at bottom of groove extending crosswise the base |
| FR1343239A (fr) * | 1961-12-22 | 1963-11-15 | Dispositif semiconducteur | |
| JPS4222654Y1 (enrdf_load_stackoverflow) * | 1966-11-28 | 1967-12-23 |
-
1969
- 1969-07-09 DE DE19691934866 patent/DE1934866A1/de active Pending
- 1969-07-30 GB GB38231/69A patent/GB1280491A/en not_active Expired
- 1969-08-04 NL NL6911843A patent/NL6911843A/xx unknown
- 1969-08-04 JP JP44061620A patent/JPS501633B1/ja active Pending
- 1969-08-04 FR FR696926663A patent/FR2015064B1/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2719219A1 (de) * | 1977-03-08 | 1978-09-14 | Tokyo Shibaura Electric Co | Halbleitervorrichtung |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS501633B1 (enrdf_load_stackoverflow) | 1975-01-20 |
| NL6911843A (enrdf_load_stackoverflow) | 1970-02-09 |
| FR2015064A1 (enrdf_load_stackoverflow) | 1970-04-24 |
| GB1280491A (en) | 1972-07-05 |
| FR2015064B1 (enrdf_load_stackoverflow) | 1974-06-14 |
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