DE1923317B2 - Verfahren zum Niederschlagen von Kontaktmaterial auf einen Halbleiterkörper - Google Patents

Verfahren zum Niederschlagen von Kontaktmaterial auf einen Halbleiterkörper

Info

Publication number
DE1923317B2
DE1923317B2 DE1923317A DE1923317A DE1923317B2 DE 1923317 B2 DE1923317 B2 DE 1923317B2 DE 1923317 A DE1923317 A DE 1923317A DE 1923317 A DE1923317 A DE 1923317A DE 1923317 B2 DE1923317 B2 DE 1923317B2
Authority
DE
Germany
Prior art keywords
temperature
semiconductor body
molybdenum
contact
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE1923317A
Other languages
German (de)
English (en)
Other versions
DE1923317A1 (de
Inventor
John Anthony Perri
Jacob Riseman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE1923317A1 publication Critical patent/DE1923317A1/de
Publication of DE1923317B2 publication Critical patent/DE1923317B2/de
Pending legal-status Critical Current

Links

Classifications

    • H10P14/40—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H11/00—Apparatus or processes specially adapted for the manufacture of electric switches
    • H01H11/04—Apparatus or processes specially adapted for the manufacture of electric switches of switch contacts
    • H10D64/011—
    • H10P14/42—
    • H10P95/00—
    • H10P95/50—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE1923317A 1968-05-07 1969-05-07 Verfahren zum Niederschlagen von Kontaktmaterial auf einen Halbleiterkörper Pending DE1923317B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US72734268A 1968-05-07 1968-05-07

Publications (2)

Publication Number Publication Date
DE1923317A1 DE1923317A1 (de) 1969-11-20
DE1923317B2 true DE1923317B2 (de) 1974-10-24

Family

ID=24922289

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1923317A Pending DE1923317B2 (de) 1968-05-07 1969-05-07 Verfahren zum Niederschlagen von Kontaktmaterial auf einen Halbleiterkörper

Country Status (7)

Country Link
US (1) US3574680A (enExample)
CH (1) CH486773A (enExample)
DE (1) DE1923317B2 (enExample)
FR (1) FR2007954A1 (enExample)
GB (1) GB1244903A (enExample)
NL (1) NL6906649A (enExample)
SE (1) SE340659B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3318683C1 (de) * 1983-05-21 1984-12-13 Telefunken electronic GmbH, 7100 Heilbronn Legierter Kontakt für n-leitendes GaAlAs-Halbleitermaterial

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5827672B2 (ja) * 1978-11-07 1983-06-10 日本電信電話株式会社 電極を有する半導体装置
GB2128636B (en) * 1982-10-19 1986-01-08 Motorola Ltd Silicon-aluminium alloy metallization of semiconductor substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3318683C1 (de) * 1983-05-21 1984-12-13 Telefunken electronic GmbH, 7100 Heilbronn Legierter Kontakt für n-leitendes GaAlAs-Halbleitermaterial

Also Published As

Publication number Publication date
DE1923317A1 (de) 1969-11-20
US3574680A (en) 1971-04-13
SE340659B (enExample) 1971-11-29
GB1244903A (en) 1971-09-02
NL6906649A (enExample) 1969-11-11
FR2007954A1 (enExample) 1970-01-16
CH486773A (de) 1970-02-28

Similar Documents

Publication Publication Date Title
DE3632209C2 (enExample)
DE2647566A1 (de) Leiterstreifenstruktur, ihre verwendung und herstellung
EP0002703B1 (de) Verfahren zum Herstellen von dünnen metallisch leitenden Streifen auf Halbleitersubstraten und damit hergestellte metallisch leitende Streifen
DE1446161A1 (de) Verfahren zum Herstellen eines Supraleiters mit verbesserter Supraleitfaehigkeit und unveraenderten Abmessungen
EP0024572B1 (de) Elektrisch leitender Kontakt- oder Metallisierungsaufbau für Halbleitersubstrate
DE2041497A1 (de) Halbleiterelement und Verfahren zur Herstellung desselben
DE2228678A1 (de) Verfahren zum herstellen einer schicht aus leiterzugmaterial fuer halbleiterbauteile
DE1614148B2 (de) Verfahren zum herstellen einer elektrode fuer halbleiter bauelemente
DE2217737B2 (de) Verfahren zum Herstellen eines elektrischen Leitungssystems
DE3217026A1 (de) Halbleitervorrichtung
DE2541925A1 (de) Elektrischer kontakt und verfahren zur herstellung desselben
DE2654416A1 (de) Verfahren zur herstellung von schottky-dioden mit verbesserter hoehe der barriere
DE2654476C3 (de) Verfahren zur Herstellung einer Schottky-Sperrschicht
DE919360C (de) Selen-Gleichrichter mit Tellur und Verfahren zu seiner Herstellung
DE1923317B2 (de) Verfahren zum Niederschlagen von Kontaktmaterial auf einen Halbleiterkörper
DE2141718A1 (de) Verfahren zum Herstellen elektri scher Kontakte auf der Oberflache eines Halbleiterbauteils
DE2142342A1 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE1590786B1 (de) Verfahren zur Herstellung von Mikro-Miniatur-Schaltungen bzw.Schaltungsbauelementen
DE977513C (de) Verfahren zur Beseitigung eines Sperreffektes von flaechenhaften Kontaktelektroden an Halbleiterkoerpern aus Germanium oder Silizium
DE1963738A1 (de) Verfahren zur Herstellung von Selengleichrichterplatten
DE2603745C3 (de) Mehrschichtiger Metallanschlußkontakt und Verfahren zu seiner Herstellung
DE1590786C (de) Verfahren zur Herstellung von Mikro Miniatur Schaltungen bzw Schaltungsbauele menten
DE2540999A1 (de) Elektrischer steckkontakt
DE1101625B (de) Verfahren zum Herstellen von Selengleichrichtern
DE1614656C3 (de) Verfahren zum Verlöten der Gitter draYitetiocribelasfbarerKreuzspanngitter fur elektrische Entladungsgefäß

Legal Events

Date Code Title Description
SH Request for examination between 03.10.1968 and 22.04.1971