DE1923090A1 - Leistungstransistor - Google Patents
LeistungstransistorInfo
- Publication number
- DE1923090A1 DE1923090A1 DE19691923090 DE1923090A DE1923090A1 DE 1923090 A1 DE1923090 A1 DE 1923090A1 DE 19691923090 DE19691923090 DE 19691923090 DE 1923090 A DE1923090 A DE 1923090A DE 1923090 A1 DE1923090 A1 DE 1923090A1
- Authority
- DE
- Germany
- Prior art keywords
- emitter
- base
- region
- power transistor
- branches
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910000679 solder Inorganic materials 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 22
- 229910052759 nickel Inorganic materials 0.000 description 11
- 230000000295 complement effect Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 108010039491 Ricin Proteins 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000003090 exacerbative effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US72674168A | 1968-05-06 | 1968-05-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE1923090A1 true DE1923090A1 (de) | 1970-07-23 |
DE1923090B2 DE1923090B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-07-27 |
Family
ID=24919815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19691923090 Withdrawn DE1923090A1 (de) | 1968-05-06 | 1969-05-06 | Leistungstransistor |
Country Status (4)
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH553480A (de) * | 1972-10-31 | 1974-08-30 | Siemens Ag | Tyristor. |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1514008B2 (de) * | 1965-04-22 | 1972-12-07 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Flaechentransistor |
FR1483609A (fr) * | 1965-06-21 | 1967-06-02 | Rca Corp | Transistor et son procédé de fabrication |
-
1969
- 1969-04-28 FR FR6913410A patent/FR2007870B1/fr not_active Expired
- 1969-04-29 GB GB21784/69A patent/GB1199266A/en not_active Expired
- 1969-05-06 DE DE19691923090 patent/DE1923090A1/de not_active Withdrawn
-
1973
- 1973-12-30 MY MY392/73A patent/MY7300392A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
DE1923090B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-07-27 |
FR2007870A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1970-01-16 |
GB1199266A (en) | 1970-07-22 |
FR2007870B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1975-01-10 |
MY7300392A (en) | 1973-12-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE1965546C3 (de) | Halbleiterbauelement | |
DE69609905T2 (de) | Monolytische Montage von Halbleiterbauteilen mit einer Hochgeschwindigkeitsdiode | |
DE2324780C3 (de) | Verfahren zum Herstellen eines Halbleiterbauelements | |
DE69412327T2 (de) | Monolithisches Diodengitter | |
DE1789119C3 (de) | Halbleiterbauelement. Ausscheidung aus: 1514855 | |
DE2218230A1 (de) | Halbleiterbauelement mit guter Wärmeableitung | |
DE3119288A1 (de) | Halbleiteranordnung | |
DE1923090A1 (de) | Leistungstransistor | |
DE2800363C2 (de) | Halbleiteranordnung und Verfahren zu deren Herstellung | |
DE2822166C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
DE2357640C3 (de) | Kontaktierung eines planaren Gunn-Effekt-Halbleiterbauelement | |
DE2444589A1 (de) | Integrierte halbleiterschaltung | |
DE2431011A1 (de) | Halbleitervorrichtung | |
DE2923693A1 (de) | Schalttransistor | |
DE2332574A1 (de) | Verfahren zur herstellung eines halbleiters und halbleitervorrichtung | |
EP0397898B1 (de) | Bipolarer Bump-Transistor und Verfahren zur Herstellung | |
DE2444588C2 (de) | Integrierte Darlington-Schaltung | |
DE2854995C2 (de) | Integrierte Darlington-Schaltungsanordnung | |
DE69116207T2 (de) | Integrierte Schaltung bestehend aus einem Lateraltransistor mit Mehrfachkollektoren | |
DE1800193A1 (de) | Verfahren zum Herstellen von Kontakten | |
DE2358936C3 (de) | Thyristor mit Druckkontaktierung | |
WO1987007081A1 (fr) | Composant a semiconducteurs | |
DE2457106A1 (de) | Thyristor | |
DE1589465A1 (de) | Schottky-Halbleiterbauelement | |
DE3436927A1 (de) | Bipolarer fototransistor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8239 | Disposal/non-payment of the annual fee |