GB1199266A - Power Transistor - Google Patents

Power Transistor

Info

Publication number
GB1199266A
GB1199266A GB21784/69A GB2178469A GB1199266A GB 1199266 A GB1199266 A GB 1199266A GB 21784/69 A GB21784/69 A GB 21784/69A GB 2178469 A GB2178469 A GB 2178469A GB 1199266 A GB1199266 A GB 1199266A
Authority
GB
United Kingdom
Prior art keywords
emitter
base
plate
region
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21784/69A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1199266A publication Critical patent/GB1199266A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,199,266. Transistors. R.C.A. CORP. 29 April, 1969 [6 May, 1968], No. 21784/69. Heading H1K. A transistor comprises an emitter region in the form of a plurality of portions 4 (a, b, c, d) each of which comprises a trunk, 8 extending radially away from a central area 6<SP>1</SP> and having pairs of latteral branches 10 extending from opposite sides and progressively increasing in length towards the periphery of the wafer, a base region 6 including the central surface area 6<SP>1</SP> and having branches 14 interdigitated with the emitter region branches, an emitter electrode comprising a metal plate 36 connected to each of the emitter portions near its periphery and having a central aperture 38 through which extends a base electrode 46 connected to the central base area 6<SP>1</SP>. As shown, Fig. 3, the transistor comprises a collector region 19, a base region 16 and four mesa type emitter regions 4a, (b), c, (d). Emitter, base, and. collector contacts are formed by providing layers 20, 24, 28 of Ni covered with layers 22, 26, 30 of solder respectively, by electrolessly depositing a thin layer of Ni on the whole upper face and sintering, covering areas to which contacts are not required with a photoresist mask, electrolessly depositing a second layer of Ni and dipping in molten solder without removing the mask. The wafer is then etched to remove the photo-resist and to etch the exposed edges of emitter junction 18. The collector contact is mounted on a Mo plate 32 brazed to a Cu header 34. The emitter electrode comprises a plate 36 the corners of which have dimples 44 which contact and are soldered to the outer edges of the emitter contacts. An arm (40) extends from one edge of the plate 36 and is soldered to a lead-out pin (42) insulated from the header 34 by a ceramic eyelet. The electrode comprises a phosphor bronze strip one end of which is soldered to a second insulated lead-out pin (48) and the other end extending through an aperture 38 in the emitter electrode plate 36 to contact the central area 6<SP>1</SP> of the base contact.
GB21784/69A 1968-05-06 1969-04-29 Power Transistor Expired GB1199266A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US72674168A 1968-05-06 1968-05-06

Publications (1)

Publication Number Publication Date
GB1199266A true GB1199266A (en) 1970-07-22

Family

ID=24919815

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21784/69A Expired GB1199266A (en) 1968-05-06 1969-04-29 Power Transistor

Country Status (4)

Country Link
DE (1) DE1923090A1 (en)
FR (1) FR2007870B1 (en)
GB (1) GB1199266A (en)
MY (1) MY7300392A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2204895A1 (en) * 1972-10-31 1974-05-24 Siemens Ag

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1514008B2 (en) * 1965-04-22 1972-12-07 Deutsche Itt Industries Gmbh, 7800 Freiburg AREA TRANSISTOR
FR1483609A (en) * 1965-06-21 1967-06-02 Rca Corp Transistor and its manufacturing process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2204895A1 (en) * 1972-10-31 1974-05-24 Siemens Ag

Also Published As

Publication number Publication date
DE1923090A1 (en) 1970-07-23
FR2007870A1 (en) 1970-01-16
FR2007870B1 (en) 1975-01-10
MY7300392A (en) 1973-12-31
DE1923090B2 (en) 1978-07-27

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee