GB1228083A - - Google Patents
Info
- Publication number
- GB1228083A GB1228083A GB1228083DA GB1228083A GB 1228083 A GB1228083 A GB 1228083A GB 1228083D A GB1228083D A GB 1228083DA GB 1228083 A GB1228083 A GB 1228083A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- semi
- conductor
- sio
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 6
- 239000004065 semiconductor Substances 0.000 abstract 6
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 5
- 238000005530 etching Methods 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 abstract 3
- 239000004411 aluminium Substances 0.000 abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 abstract 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 229960000583 acetic acid Drugs 0.000 abstract 1
- 150000001298 alcohols Chemical class 0.000 abstract 1
- 239000006172 buffering agent Substances 0.000 abstract 1
- 150000001735 carboxylic acids Chemical class 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000012362 glacial acetic acid Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 235000011007 phosphoric acid Nutrition 0.000 abstract 1
- 150000003016 phosphoric acids Chemical class 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1,228,083. Etching. RCA CORPORATION. 3 June, 1969 [10 June, 1968], No. 28050/69. Heading B6J. [Also in Division H1] A semi-conductor device is produced by providing a substrate having a plurality of regions of semi-conductor material forming a number of semi-conductor elements, each element having at least one contact region adjacent a surface of the substrate, depositing a metallic layer on the said surface of the substrate to provide a number of terminal areas electrically coupled to corresponding semi-conductor element contact regions, depositing an insulating layer on the metallic layer and etching away portions of the insulating layer overlying the terminal areas with an etching solution which is substantially electrically non-conductive and comprises hydrofluoric acid, a buffering agent (e.g. ammonium fluoride) and an organic substance selected from alcohols and carboxylic acids. Examples of suitable organic substances are glacial acetic acid, glycol or glycerol. The insulating layer may comprise silicon dioxide and the metallic layer may comprise aluminium, nickel, copper, gold, iron, tantalum, silver, titanium or combinations of these. In a preferred embodiment, Figs. 5-9, an aluminium film 7 is evaporated on to the surface of a semi-conductor wafer comprising an N+ silicon substrate 3, an N-type silicon epitaxial layer 2 and a silicon dioxide layer 4. A further SiO 2 layer 8 is pyrolytically deposited and then covered with a layer 9 of photoresist. To remove the metal area 7 which overlies the SiO 2 layer portion 10, the layer 9 is exposed through a suitable mask and developed and subsequently the hole 11 is formed in the SiO 2 layer 8 by means of the aforementioned non-conductive buffered hydrofluoric acid etching solution. The exposed metal is then etched with a mixture of nitric and phosphoric acids. Photoresist 9 may be removed prior to the metal etching step. The portions of layer 7 in contact with the P and N+ regions are then alloyed to the semi-conductor surface by heating the wafer at 530-550‹ C. and thereafter a fresh SiO 2 film 12 is pyrolytically deposited. A fresh photoresist 13 is used to define apertures 14 and 15 in the SiO 2 layers 8 and 12 which layers are etched according to the invention with the non- conductive buffered hydrofluoric acid solution. Terminal leads may then be ultrasonically bonded to the aluminium pods exposed by apertures 14 and 15.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US73571968A | 1968-06-10 | 1968-06-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1228083A true GB1228083A (en) | 1971-04-15 |
Family
ID=24956905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1228083D Expired GB1228083A (en) | 1968-06-10 | 1969-06-03 |
Country Status (8)
| Country | Link |
|---|---|
| BR (1) | BR6909609D0 (en) |
| DE (1) | DE1929084C3 (en) |
| ES (1) | ES368134A1 (en) |
| FR (1) | FR2011513B1 (en) |
| GB (1) | GB1228083A (en) |
| MY (1) | MY7400057A (en) |
| NL (1) | NL6908748A (en) |
| SE (1) | SE355692B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001009935A1 (en) * | 1999-07-28 | 2001-02-08 | Merck Patent Gmbh | Etching solution, containing hydrofluoric acid |
| WO2005096747A2 (en) * | 2004-04-02 | 2005-10-20 | Honeywell International Inc. | Highly selective silicon oxide etching compositions |
| CN112099311A (en) * | 2020-09-22 | 2020-12-18 | 桂林电子科技大学 | Preparation method of photoetching mask plate based on AAO nano structure |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2288138A1 (en) * | 1974-10-18 | 1976-05-14 | Radiotechnique Compelec | Removal of aluminium oxide layer by etching - using a solution of fluoride in an organic solvent |
| US4230523A (en) * | 1978-12-29 | 1980-10-28 | International Business Machines Corporation | Etchant for silicon dioxide films disposed atop silicon or metallic silicides |
| US4620934A (en) * | 1984-04-26 | 1986-11-04 | Allied Corporation | Soluble fluorinated cycloalkane sulfonate surfactant additives for NH4 |
| US4517106A (en) * | 1984-04-26 | 1985-05-14 | Allied Corporation | Soluble surfactant additives for ammonium fluoride/hydrofluoric acid oxide etchant solutions |
-
1969
- 1969-06-03 GB GB1228083D patent/GB1228083A/en not_active Expired
- 1969-06-07 ES ES368134A patent/ES368134A1/en not_active Expired
- 1969-06-09 DE DE19691929084 patent/DE1929084C3/en not_active Expired
- 1969-06-09 NL NL6908748A patent/NL6908748A/xx not_active Application Discontinuation
- 1969-06-09 SE SE814869A patent/SE355692B/xx unknown
- 1969-06-10 BR BR20960969A patent/BR6909609D0/en unknown
- 1969-06-10 FR FR6919175A patent/FR2011513B1/fr not_active Expired
-
1974
- 1974-12-30 MY MY7400057A patent/MY7400057A/en unknown
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001009935A1 (en) * | 1999-07-28 | 2001-02-08 | Merck Patent Gmbh | Etching solution, containing hydrofluoric acid |
| US7501072B2 (en) | 1999-07-28 | 2009-03-10 | Basf Aktiengesellschaft | Etching solution comprising hydrofluoric acid |
| US7192860B2 (en) | 2002-06-20 | 2007-03-20 | Honeywell International Inc. | Highly selective silicon oxide etching compositions |
| WO2005096747A2 (en) * | 2004-04-02 | 2005-10-20 | Honeywell International Inc. | Highly selective silicon oxide etching compositions |
| WO2005096747A3 (en) * | 2004-04-02 | 2006-03-30 | Honeywell Int Inc | Highly selective silicon oxide etching compositions |
| CN112099311A (en) * | 2020-09-22 | 2020-12-18 | 桂林电子科技大学 | Preparation method of photoetching mask plate based on AAO nano structure |
| CN112099311B (en) * | 2020-09-22 | 2024-05-21 | 桂林电子科技大学 | Preparation method of photoetching mask based on AAO nanostructure |
Also Published As
| Publication number | Publication date |
|---|---|
| NL6908748A (en) | 1969-12-12 |
| FR2011513A1 (en) | 1970-03-06 |
| MY7400057A (en) | 1974-12-31 |
| FR2011513B1 (en) | 1973-10-19 |
| ES368134A1 (en) | 1971-06-16 |
| BR6909609D0 (en) | 1973-01-02 |
| SE355692B (en) | 1973-04-30 |
| DE1929084C3 (en) | 1980-05-08 |
| DE1929084B2 (en) | 1975-01-09 |
| DE1929084A1 (en) | 1969-12-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3462650A (en) | Electrical circuit manufacture | |
| US3970486A (en) | Methods of producing a semiconductor device and a semiconductor device produced by said method | |
| US3475234A (en) | Method for making mis structures | |
| US4070690A (en) | VMOS transistor | |
| US3493820A (en) | Airgap isolated semiconductor device | |
| US3237271A (en) | Method of fabricating semiconductor devices | |
| GB1203086A (en) | Ohmic contact and electrical lead for semiconductor devices | |
| US3280391A (en) | High frequency transistors | |
| US3616348A (en) | Process for isolating semiconductor elements | |
| US3427708A (en) | Semiconductor | |
| US3244555A (en) | Semiconductor devices | |
| US4012767A (en) | Electrical interconnections for semi-conductor devices | |
| US3686748A (en) | Method and apparatus for providng thermal contact and electrical isolation of integrated circuits | |
| US3449825A (en) | Fabrication of semiconductor devices | |
| JPS5950113B2 (en) | semiconductor equipment | |
| GB1228083A (en) | ||
| US3590478A (en) | Method of forming electrical leads for semiconductor device | |
| US3397450A (en) | Method of forming a metal rectifying contact to semiconductor material by displacement plating | |
| US3716765A (en) | Semiconductor device with protective glass sealing | |
| GB1356710A (en) | Semiconductor resistor | |
| US3271636A (en) | Gallium arsenide semiconductor diode and method | |
| US3463971A (en) | Hybrid semiconductor device including diffused-junction and schottky-barrier diodes | |
| US3513022A (en) | Method of fabricating semiconductor devices | |
| US3631307A (en) | Semiconductor structures having improved high-frequency response and power dissipation capabilities | |
| US4011578A (en) | Photodiode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |