DE1920077C2 - Schaltungsanordnung zum Übertragen von Ladungen - Google Patents
Schaltungsanordnung zum Übertragen von LadungenInfo
- Publication number
- DE1920077C2 DE1920077C2 DE1920077A DE1920077A DE1920077C2 DE 1920077 C2 DE1920077 C2 DE 1920077C2 DE 1920077 A DE1920077 A DE 1920077A DE 1920077 A DE1920077 A DE 1920077A DE 1920077 C2 DE1920077 C2 DE 1920077C2
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- capacitance
- electrode
- circuit arrangement
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/472—Surface-channel CCD
- H10D44/476—Three-phase CCD
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
- G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/04—Shift registers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/462—Buried-channel CCD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Networks Using Active Elements (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691967042 DE1967042B2 (de) | 1968-04-23 | 1969-04-21 | Ladungsuebertragungs-vorrichtung und verfahren zu ihrem betrieb |
DE1967141A DE1967141C3 (de) | 1968-04-23 | 1969-04-21 | Integrierte Halbleiter-Ladungsübertragungsvorrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NLAANVRAGE6805705,A NL174503C (nl) | 1968-04-23 | 1968-04-23 | Inrichting voor het overhevelen van lading. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE1920077A1 DE1920077A1 (de) | 1969-11-06 |
DE1920077C2 true DE1920077C2 (de) | 1984-11-29 |
Family
ID=19803413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1920077A Expired DE1920077C2 (de) | 1968-04-23 | 1969-04-21 | Schaltungsanordnung zum Übertragen von Ladungen |
Country Status (12)
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3519389A1 (de) | 1984-05-30 | 1985-12-19 | Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa | Mosfet mit veraenderlicher leitfaehigkeit |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3858232A (en) * | 1970-02-16 | 1974-12-31 | Bell Telephone Labor Inc | Information storage devices |
US3700932A (en) * | 1970-02-16 | 1972-10-24 | Bell Telephone Labor Inc | Charge coupled devices |
US3660697A (en) * | 1970-02-16 | 1972-05-02 | Bell Telephone Labor Inc | Monolithic semiconductor apparatus adapted for sequential charge transfer |
US3770988A (en) * | 1970-09-04 | 1973-11-06 | Gen Electric | Self-registered surface charge launch-receive device and method for making |
US3789240A (en) * | 1970-10-26 | 1974-01-29 | Rca Corp | Bucket brigade scanning of sensor array |
US3790825A (en) * | 1972-10-10 | 1974-02-05 | Gen Electric | Gate-diffusion isolation for jfet depletion-mode bucket brigade circuit |
US3825996A (en) * | 1972-10-10 | 1974-07-30 | Gen Electric | Gate-diffusion isolation for jfet depletion-mode bucket brigade circuit |
US3825995A (en) * | 1972-10-10 | 1974-07-30 | Gen Electric | Dielectric strip isolation for jfet or mesfet depletion-mode bucket-brigade circuit |
US3784847A (en) * | 1972-10-10 | 1974-01-08 | Gen Electric | Dielectric strip isolation for jfet or mesfet depletion-mode bucket-brigade circuit |
GB1457253A (en) * | 1972-12-01 | 1976-12-01 | Mullard Ltd | Semiconductor charge transfer devices |
JPS5936402U (ja) * | 1982-08-31 | 1984-03-07 | 満企業株式会社 | 缶詰用加熱台 |
JPS5936401U (ja) * | 1982-08-31 | 1984-03-07 | 満企業株式会社 | コンロ付き缶詰 |
JPS5975602U (ja) * | 1982-11-12 | 1984-05-22 | 井上 定夫 | 携帯用こん炉付容器 |
JPS60119333U (ja) * | 1984-01-23 | 1985-08-12 | 株式会社 八木商店 | コツヘル等の火台 |
DE3546745C2 (de) * | 1984-05-30 | 1994-06-30 | Toshiba Kawasaki Kk | Lateraler MOS-Feldeffekttransistor mit Leitfähigkeitsmodulation |
JPS61252433A (ja) * | 1985-05-02 | 1986-11-10 | Mitsutaka Uto | 携帯簡易コンロ |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3289010A (en) | 1963-11-21 | 1966-11-29 | Burroughs Corp | Shift register |
FR1430601A (fr) | 1964-05-08 | 1966-03-04 | Gen Micro Electronics Inc | Dispositif de mémoire |
DE1474510B2 (de) | 1965-12-14 | 1971-11-25 | Siemens AG, 1000 Berlin u. 8000 München | Durch schiebeimpulse gesteuerte schieberegister insbesondere fuer zeitmultiplex systeme |
-
1968
- 1968-04-23 NL NLAANVRAGE6805705,A patent/NL174503C/xx not_active IP Right Cessation
-
1969
- 1969-03-25 NL NL6904620.A patent/NL164158C/xx not_active IP Right Cessation
- 1969-04-21 DE DE1920077A patent/DE1920077C2/de not_active Expired
- 1969-04-21 DK DK217669AA patent/DK135253B/da not_active IP Right Cessation
- 1969-04-21 CH CH600369A patent/CH505506A/de not_active IP Right Cessation
- 1969-04-21 AT AT383069A patent/AT301907B/de not_active IP Right Cessation
- 1969-04-21 ES ES366284A patent/ES366284A1/es not_active Expired
- 1969-04-22 FR FR6912626A patent/FR2010994A1/fr active Pending
- 1969-04-22 BE BE731897D patent/BE731897A/xx not_active IP Right Cessation
- 1969-04-22 GB GB20475/69A patent/GB1273181A/en not_active Expired
- 1969-04-22 BR BR208247/69A patent/BR6908247D0/pt unknown
-
1971
- 1971-01-02 ES ES386995A patent/ES386995A1/es not_active Expired
-
1972
- 1972-02-07 JP JP47012936A patent/JPS4830171B1/ja active Pending
- 1972-02-07 JP JP47012935A patent/JPS4817779B1/ja active Pending
- 1972-04-21 SE SE7205249A patent/SE429797B/xx unknown
-
1976
- 1976-05-06 SE SE7605172A patent/SE440420B/xx unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3519389A1 (de) | 1984-05-30 | 1985-12-19 | Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa | Mosfet mit veraenderlicher leitfaehigkeit |
Also Published As
Publication number | Publication date |
---|---|
BR6908247D0 (pt) | 1973-05-31 |
DK135253C (enrdf_load_stackoverflow) | 1977-08-29 |
GB1273181A (en) | 1972-05-03 |
NL6805705A (enrdf_load_stackoverflow) | 1969-10-27 |
DK135253B (da) | 1977-03-21 |
NL6904620A (enrdf_load_stackoverflow) | 1969-10-27 |
SE440420B (sv) | 1985-07-29 |
DE1920077A1 (de) | 1969-11-06 |
NL174503B (nl) | 1984-01-16 |
ES386995A1 (es) | 1973-04-16 |
SE7605172L (sv) | 1976-05-06 |
BE731897A (enrdf_load_stackoverflow) | 1969-10-22 |
NL174503C (nl) | 1984-06-18 |
FR2010994A1 (enrdf_load_stackoverflow) | 1970-02-27 |
ES366284A1 (es) | 1971-05-01 |
JPS4817779B1 (enrdf_load_stackoverflow) | 1973-05-31 |
NL164158C (nl) | 1980-11-17 |
SE429797B (sv) | 1983-09-26 |
AT301907B (de) | 1972-09-25 |
CH505506A (de) | 1971-03-31 |
NL164158B (nl) | 1980-06-16 |
JPS4830171B1 (enrdf_load_stackoverflow) | 1973-09-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AH | Division in |
Ref country code: DE Ref document number: 1967141 Format of ref document f/p: P |
|
8162 | Independent application | ||
AH | Division in |
Ref country code: DE Ref document number: 1967042 Format of ref document f/p: P |
|
D2 | Grant after examination | ||
8363 | Opposition against the patent | ||
8365 | Fully valid after opposition proceedings |