DE1904198A1 - Halbleitervorrichtung und Verfahren zu ihrer Herstellung - Google Patents
Halbleitervorrichtung und Verfahren zu ihrer HerstellungInfo
- Publication number
- DE1904198A1 DE1904198A1 DE19691904198 DE1904198A DE1904198A1 DE 1904198 A1 DE1904198 A1 DE 1904198A1 DE 19691904198 DE19691904198 DE 19691904198 DE 1904198 A DE1904198 A DE 1904198A DE 1904198 A1 DE1904198 A1 DE 1904198A1
- Authority
- DE
- Germany
- Prior art keywords
- radiation
- screen
- coating
- area
- permeability
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/50—Encapsulations or containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S65/00—Glass manufacturing
- Y10S65/11—Encapsulating
Landscapes
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB536168 | 1968-02-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1904198A1 true DE1904198A1 (de) | 1969-09-04 |
Family
ID=9794668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19691904198 Pending DE1904198A1 (de) | 1968-02-02 | 1969-01-29 | Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3651564A (https=) |
| DE (1) | DE1904198A1 (https=) |
| GB (1) | GB1232812A (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1403801A (en) * | 1973-01-30 | 1975-08-28 | Standard Telephones Cables Ltd | Semiconductor device stud mount |
| US3903427A (en) * | 1973-12-28 | 1975-09-02 | Hughes Aircraft Co | Solar cell connections |
| JPS5624969A (en) * | 1979-08-09 | 1981-03-10 | Canon Inc | Semiconductor integrated circuit element |
| IT1212767B (it) * | 1983-07-29 | 1989-11-30 | Ates Componenti Elettron | Soppressore di sovratensioni a semiconduttore con tensione d'innesco predeterminabile con precisione. |
| US5252856A (en) * | 1990-09-26 | 1993-10-12 | Nec Corporation | Optical semiconductor device |
| US20100116970A1 (en) * | 2008-11-12 | 2010-05-13 | Wen-Long Chou | Photo detection device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2766144A (en) * | 1955-10-31 | 1956-10-09 | Lidow Eric | Photocell |
| US3072796A (en) * | 1959-03-26 | 1963-01-08 | Philips Corp | Phot-electric cell |
| NL259748A (https=) * | 1960-04-30 | |||
| FR1276723A (fr) * | 1960-10-11 | 1961-11-24 | D Electroniques Et De Physique | Perfectionnements aux procédés de fabrication de dispositifs photo-électriques semi-conducteurs et à de tels dispositifs |
| US3222530A (en) * | 1961-06-07 | 1965-12-07 | Philco Corp | Ultra-sensitive photo-transistor device comprising wafer having high resistivity center region with opposite conductivity, diffused, low-resistivity, and translucent outer layers |
| US3417253A (en) * | 1965-04-23 | 1968-12-17 | Minnesota Mining & Mfg | Compact pulse generating device utilizing a translucent epoxy resin encapsulated transistor |
| US3517198A (en) * | 1966-12-01 | 1970-06-23 | Gen Electric | Light emitting and absorbing devices |
-
1968
- 1968-02-02 GB GB536168A patent/GB1232812A/en not_active Expired
-
1969
- 1969-01-24 US US793742*A patent/US3651564A/en not_active Expired - Lifetime
- 1969-01-29 DE DE19691904198 patent/DE1904198A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB1232812A (https=) | 1971-05-19 |
| US3651564A (en) | 1972-03-28 |
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