DE1806980A1 - Halbleiter-Bauelement - Google Patents

Halbleiter-Bauelement

Info

Publication number
DE1806980A1
DE1806980A1 DE19681806980 DE1806980A DE1806980A1 DE 1806980 A1 DE1806980 A1 DE 1806980A1 DE 19681806980 DE19681806980 DE 19681806980 DE 1806980 A DE1806980 A DE 1806980A DE 1806980 A1 DE1806980 A1 DE 1806980A1
Authority
DE
Germany
Prior art keywords
layer
silicon
component
contact
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19681806980
Other languages
German (de)
English (en)
Inventor
Duncan David Murray
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of DE1806980A1 publication Critical patent/DE1806980A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
DE19681806980 1967-11-15 1968-11-05 Halbleiter-Bauelement Pending DE1806980A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68336367A 1967-11-15 1967-11-15

Publications (1)

Publication Number Publication Date
DE1806980A1 true DE1806980A1 (de) 1969-06-19

Family

ID=24743716

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19681806980 Pending DE1806980A1 (de) 1967-11-15 1968-11-05 Halbleiter-Bauelement

Country Status (4)

Country Link
DE (1) DE1806980A1 (enExample)
ES (1) ES360290A1 (enExample)
FR (1) FR1591965A (enExample)
NL (1) NL6816308A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2428915A1 (fr) * 1978-06-14 1980-01-11 Fujitsu Ltd Procede de fabrication d'un dispositif a semi-conducteurs
FR2487123A1 (fr) * 1980-07-18 1982-01-22 Philips Nv Dispositif semi-conducteur et procede pour relier celui-ci a un support
EP0070737A3 (en) * 1981-07-21 1984-06-06 Fujitsu Limited Semiconductor device having an electrode, and method for producing the same
FR2542920A1 (fr) * 1983-03-18 1984-09-21 Commissariat Energie Atomique Procede de positionnement d'une ligne d'interconnexion sur un trou de contact electrique d'un circuit integre
EP0472804A3 (en) * 1990-08-01 1992-06-24 International Business Machines Corporation Copper-semiconductor compounds capable of being produced at room temperature
US5288456A (en) * 1993-02-23 1994-02-22 International Business Machines Corporation Compound with room temperature electrical resistivity comparable to that of elemental copper

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3753774A (en) * 1971-04-05 1973-08-21 Rca Corp Method for making an intermetallic contact to a semiconductor device
US4050967A (en) * 1976-12-09 1977-09-27 Rca Corporation Method of selective aluminum diffusion

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2428915A1 (fr) * 1978-06-14 1980-01-11 Fujitsu Ltd Procede de fabrication d'un dispositif a semi-conducteurs
FR2487123A1 (fr) * 1980-07-18 1982-01-22 Philips Nv Dispositif semi-conducteur et procede pour relier celui-ci a un support
EP0070737A3 (en) * 1981-07-21 1984-06-06 Fujitsu Limited Semiconductor device having an electrode, and method for producing the same
US4801559A (en) * 1981-07-21 1989-01-31 Fujitsu Limited Process for forming planar wiring using polysilicon to fill gaps
FR2542920A1 (fr) * 1983-03-18 1984-09-21 Commissariat Energie Atomique Procede de positionnement d'une ligne d'interconnexion sur un trou de contact electrique d'un circuit integre
EP0119917A1 (fr) * 1983-03-18 1984-09-26 Commissariat A L'energie Atomique Procédé de positionnement d'une ligne d'interconnexion sur un trou de contact électrique d'une circuit intégré
US4544445A (en) * 1983-03-18 1985-10-01 Commissariat A L'energie Atomique Process for positioning an interconnection line on an electric contact hole of an integrated circuit
EP0472804A3 (en) * 1990-08-01 1992-06-24 International Business Machines Corporation Copper-semiconductor compounds capable of being produced at room temperature
US5288456A (en) * 1993-02-23 1994-02-22 International Business Machines Corporation Compound with room temperature electrical resistivity comparable to that of elemental copper

Also Published As

Publication number Publication date
FR1591965A (enExample) 1970-05-04
NL6816308A (enExample) 1969-05-19
ES360290A1 (es) 1970-07-01

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