DE1804012A1 - Indirekt geheizter Thermistor und Verfahren zu seiner Herstellung - Google Patents

Indirekt geheizter Thermistor und Verfahren zu seiner Herstellung

Info

Publication number
DE1804012A1
DE1804012A1 DE19681804012 DE1804012A DE1804012A1 DE 1804012 A1 DE1804012 A1 DE 1804012A1 DE 19681804012 DE19681804012 DE 19681804012 DE 1804012 A DE1804012 A DE 1804012A DE 1804012 A1 DE1804012 A1 DE 1804012A1
Authority
DE
Germany
Prior art keywords
layer
germanium
glass layer
glass
semiconductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19681804012
Other languages
German (de)
English (en)
Inventor
Michel Gaultier
Villemant Claude Marie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
Deutsche ITT Industries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Publication of DE1804012A1 publication Critical patent/DE1804012A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/041—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed with two or more layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49085—Thermally variable

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)
DE19681804012 1967-10-20 1968-10-19 Indirekt geheizter Thermistor und Verfahren zu seiner Herstellung Pending DE1804012A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR125231 1967-10-20

Publications (1)

Publication Number Publication Date
DE1804012A1 true DE1804012A1 (de) 1969-08-07

Family

ID=8640430

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19681804012 Pending DE1804012A1 (de) 1967-10-20 1968-10-19 Indirekt geheizter Thermistor und Verfahren zu seiner Herstellung

Country Status (5)

Country Link
US (1) US3568125A (https=)
BE (1) BE722608A (https=)
DE (1) DE1804012A1 (https=)
FR (1) FR1551999A (https=)
GB (1) GB1230155A (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3697863A (en) * 1971-01-04 1972-10-10 Texas Instruments Inc Overcurrent protection system and sensor used therewith
CA938735A (en) * 1971-10-01 1973-12-18 Multi-State Devices Ltd. Electrical relay
US3922658A (en) * 1974-12-04 1975-11-25 Bendix Corp Fluid level monitor
US4414600A (en) * 1981-12-21 1983-11-08 Esquire, Inc. Protection device for high intensity gaseous discharge lamp starting circuit
US5653954A (en) * 1995-06-07 1997-08-05 Thermometrics, Inc. Nickel-manganese oxide single crystals
US5830268A (en) * 1995-06-07 1998-11-03 Thermometrics, Inc. Methods of growing nickel-manganese oxide single crystals
US6099164A (en) * 1995-06-07 2000-08-08 Thermometrics, Inc. Sensors incorporating nickel-manganese oxide single crystals
EP0842119A4 (en) * 1995-06-07 1998-12-02 Thermometrics Inc SINGLE CRYSTALS OF NICKEL MANGANOXIDE
EP0906246A4 (en) * 1996-06-17 2002-11-13 Thermometrics Inc GROWTH OF NICKEL-COBALT-MANGANESE OXIDE MONOCRYSTALS
US6125529A (en) * 1996-06-17 2000-10-03 Thermometrics, Inc. Method of making wafer based sensors and wafer chip sensors
EP0923504A4 (en) * 1996-08-23 2002-11-06 Thermometrics Inc GROWTH OF NICKEL-IRON-MANGANESE OXIDE MONOCRYSTALS
JPH10261507A (ja) * 1997-03-18 1998-09-29 Murata Mfg Co Ltd サーミスタ素子
US5896081A (en) * 1997-06-10 1999-04-20 Cyntec Company Resistance temperature detector (RTD) formed with a surface-mount-device (SMD) structure
US7306967B1 (en) 2003-05-28 2007-12-11 Adsem, Inc. Method of forming high temperature thermistors
US7812705B1 (en) 2003-12-17 2010-10-12 Adsem, Inc. High temperature thermistor probe
US7292132B1 (en) 2003-12-17 2007-11-06 Adsem, Inc. NTC thermistor probe
DE102011109007A1 (de) * 2011-07-29 2013-01-31 Epcos Ag Verfahren zum Herstellen eines elektrischen Bauelements und elektrisches Bauelement
CN104198079A (zh) * 2014-07-30 2014-12-10 肇庆爱晟电子科技有限公司 一种高精度高可靠快速响应热敏芯片及其制作方法

Also Published As

Publication number Publication date
GB1230155A (https=) 1971-04-28
BE722608A (https=) 1969-04-21
US3568125A (en) 1971-03-02
FR1551999A (https=) 1969-01-03

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