DE1803731C3 - Verfahren zum Kristallisieren einer binären Halbleiterverbindung - Google Patents

Verfahren zum Kristallisieren einer binären Halbleiterverbindung

Info

Publication number
DE1803731C3
DE1803731C3 DE1803731A DE1803731A DE1803731C3 DE 1803731 C3 DE1803731 C3 DE 1803731C3 DE 1803731 A DE1803731 A DE 1803731A DE 1803731 A DE1803731 A DE 1803731A DE 1803731 C3 DE1803731 C3 DE 1803731C3
Authority
DE
Germany
Prior art keywords
solution
temperature
gallium
crystal
indium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1803731A
Other languages
German (de)
English (en)
Other versions
DE1803731A1 (de
DE1803731B2 (de
Inventor
Elie Andre
Jean-Marc Leduc
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR125280A external-priority patent/FR1552003A/fr
Priority claimed from FR125281A external-priority patent/FR1552004A/fr
Priority claimed from FR134422A external-priority patent/FR93695E/fr
Priority claimed from FR134421A external-priority patent/FR93694E/fr
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1803731A1 publication Critical patent/DE1803731A1/de
Publication of DE1803731B2 publication Critical patent/DE1803731B2/de
Application granted granted Critical
Publication of DE1803731C3 publication Critical patent/DE1803731C3/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/912—Replenishing liquid precursor, other than a moving zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE1803731A 1967-10-20 1968-10-18 Verfahren zum Kristallisieren einer binären Halbleiterverbindung Expired DE1803731C3 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
FR125280A FR1552003A (enExample) 1967-10-20 1967-10-20
FR125281A FR1552004A (enExample) 1967-10-20 1967-10-20
FR134422A FR93695E (fr) 1967-10-20 1967-12-29 Procédé de dépot épitaxique en phase liquide d'arséniure de gallium.
FR134421A FR93694E (fr) 1967-10-20 1967-12-29 Procédé de dépot épitaxique en phase liquide.

Publications (3)

Publication Number Publication Date
DE1803731A1 DE1803731A1 (de) 1969-05-14
DE1803731B2 DE1803731B2 (de) 1977-09-08
DE1803731C3 true DE1803731C3 (de) 1978-05-03

Family

ID=27444933

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1803731A Expired DE1803731C3 (de) 1967-10-20 1968-10-18 Verfahren zum Kristallisieren einer binären Halbleiterverbindung

Country Status (8)

Country Link
US (1) US3632431A (enExample)
BE (1) BE722667A (enExample)
CA (1) CA920484A (enExample)
CH (1) CH532959A (enExample)
DE (1) DE1803731C3 (enExample)
GB (1) GB1242410A (enExample)
NL (1) NL6815008A (enExample)
SE (1) SE338761B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3827399A (en) * 1968-09-27 1974-08-06 Matsushita Electric Industrial Co Ltd Apparatus for epitaxial growth from the liquid state
US3804060A (en) * 1970-03-27 1974-04-16 Sperry Rand Corp Liquid epitaxy apparatus
IT943198B (it) * 1970-12-11 1973-04-02 Philips Nv Procedimento per la fabbricazione di monocristalli semiconduttori
US3751309A (en) * 1971-03-29 1973-08-07 Bell Telephone Labor Inc The use of a glass dopant for gap and electroluminescent diodes produced thereby
US3755011A (en) * 1972-06-01 1973-08-28 Rca Corp Method for depositing an epitaxial semiconductive layer from the liquid phase
CH541353A (de) * 1972-11-20 1973-09-15 Ibm Vorrichtung zum epitaktischen Abscheiden von Halbleitermaterial durch Flüssigphasenepitaxie aus mindestens zwei Lösungen
US3793093A (en) * 1973-01-12 1974-02-19 Handotai Kenkyu Shinkokai Method for producing a semiconductor device having a very small deviation in lattice constant
US3984261A (en) * 1974-06-10 1976-10-05 Rca Corporation Ohmic contact
US4083748A (en) * 1975-10-30 1978-04-11 Western Electric Company, Inc. Method of forming and growing a single crystal of a semiconductor compound
US4050964A (en) * 1975-12-01 1977-09-27 Bell Telephone Laboratories, Incorporated Growing smooth epitaxial layers on misoriented substrates
US4186046A (en) * 1976-09-29 1980-01-29 The United States Of America As Represented By The Secretary Of The Army Growing doped single crystal ceramic materials
US4214550A (en) * 1979-05-21 1980-07-29 Rca Corporation Apparatus for the deposition of a material from a liquid phase
US4236947A (en) * 1979-05-21 1980-12-02 General Electric Company Fabrication of grown-in p-n junctions using liquid phase epitaxial growth of silicon
US4371420A (en) * 1981-03-09 1983-02-01 The United States Of America As Represented By The Secretary Of The Navy Method for controlling impurities in liquid phase epitaxial growth
GB2097695B (en) * 1981-03-24 1984-08-22 Mitsubishi Monsanto Chem Method for producing a single crystal
CA1224885A (en) * 1984-01-18 1987-07-28 Kenichi Kikuchi Integrated circuit and method for producing it
DE3508024A1 (de) * 1985-03-07 1986-09-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung aus verbindungshalbleitermaterial
US4764350A (en) * 1986-10-08 1988-08-16 The United States Of America As Represented By The Secretary Of The Air Force Method and apparatus for synthesizing a single crystal of indium phosphide
US4824520A (en) * 1987-03-19 1989-04-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Liquid encapsulated crystal growth
FR2646020B1 (fr) * 1989-04-13 1991-07-12 Lecorre Alain Materiau composite comportant une couche d'un compose iii-v et une couche de pnicture de terres rares, procede de fabrication et application
WO1990012905A1 (en) * 1989-04-26 1990-11-01 Australian Nuclear Science & Technology Organisation Liquid phase epitaxy
AU626674B2 (en) * 1989-04-26 1992-08-06 Australian Nuclear Science & Technology Organisation Liquid phase epitaxy
US5483088A (en) * 1994-08-12 1996-01-09 S.R.I. International Compounds and infrared devices including In1-x Tlx Q, where Q is As1-y Py and 0≦y≦1
US6750482B2 (en) * 2002-04-30 2004-06-15 Rf Micro Devices, Inc. Highly conductive semiconductor layer having two or more impurities

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3198606A (en) * 1961-01-23 1965-08-03 Ibm Apparatus for growing crystals

Also Published As

Publication number Publication date
SE338761B (enExample) 1971-09-20
BE722667A (enExample) 1969-04-21
CA920484A (en) 1973-02-06
GB1242410A (en) 1971-08-11
NL6815008A (enExample) 1969-04-22
DE1803731A1 (de) 1969-05-14
DE1803731B2 (de) 1977-09-08
US3632431A (en) 1972-01-04
CH532959A (de) 1973-01-31

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee