DE1764378C3 - Integrierte Randschichtdiodenmatrix und Verfahren zu ihrer Herstellung - Google Patents

Integrierte Randschichtdiodenmatrix und Verfahren zu ihrer Herstellung

Info

Publication number
DE1764378C3
DE1764378C3 DE1764378A DE1764378A DE1764378C3 DE 1764378 C3 DE1764378 C3 DE 1764378C3 DE 1764378 A DE1764378 A DE 1764378A DE 1764378 A DE1764378 A DE 1764378A DE 1764378 C3 DE1764378 C3 DE 1764378C3
Authority
DE
Germany
Prior art keywords
layer
semiconductor
integrated
strips
diode matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1764378A
Other languages
German (de)
English (en)
Other versions
DE1764378A1 (de
DE1764378B2 (de
Inventor
Franco Forlani
Nicola Rho Minnaja
Giorgio Como Sacchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bull HN Information Systems Italia SpA
Original Assignee
Honeywell Information Systems Italia SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Information Systems Italia SpA filed Critical Honeywell Information Systems Italia SpA
Publication of DE1764378A1 publication Critical patent/DE1764378A1/de
Publication of DE1764378B2 publication Critical patent/DE1764378B2/de
Application granted granted Critical
Publication of DE1764378C3 publication Critical patent/DE1764378C3/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926—Elongated lead extending axially through another elongated lead
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49004—Electrical device making including measuring or testing of device or component part
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49069—Data storage inductor or core
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths

Landscapes

  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacture Or Reproduction Of Printing Formes (AREA)
  • Element Separation (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE1764378A 1967-05-30 1968-05-28 Integrierte Randschichtdiodenmatrix und Verfahren zu ihrer Herstellung Expired DE1764378C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT1664467 1967-05-30

Publications (3)

Publication Number Publication Date
DE1764378A1 DE1764378A1 (de) 1972-03-23
DE1764378B2 DE1764378B2 (de) 1973-05-17
DE1764378C3 true DE1764378C3 (de) 1973-12-20

Family

ID=11149070

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1764378A Expired DE1764378C3 (de) 1967-05-30 1968-05-28 Integrierte Randschichtdiodenmatrix und Verfahren zu ihrer Herstellung

Country Status (6)

Country Link
US (1) US3555365A (cg-RX-API-DMAC7.html)
DE (1) DE1764378C3 (cg-RX-API-DMAC7.html)
FR (1) FR1585038A (cg-RX-API-DMAC7.html)
GB (1) GB1220843A (cg-RX-API-DMAC7.html)
SU (1) SU473387A3 (cg-RX-API-DMAC7.html)
YU (1) YU32377B (cg-RX-API-DMAC7.html)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3699395A (en) * 1970-01-02 1972-10-17 Rca Corp Semiconductor devices including fusible elements
DE2023219C3 (de) * 1970-05-12 1979-09-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Programmierbarer Halbleiter-Festwertspeicher
US3699403A (en) * 1970-10-23 1972-10-17 Rca Corp Fusible semiconductor device including means for reducing the required fusing current
BE794202A (fr) * 1972-01-19 1973-05-16 Intel Corp Liaison fusible pour circuit integre sur substrat semi-conducteur pour memoires
GB1445479A (en) * 1974-01-22 1976-08-11 Raytheon Co Electrical fuses
FR2311410A1 (fr) * 1975-05-13 1976-12-10 Thomson Csf Circuit de commutation integre, matrice de commutation et circuits logiques utilisant ledit circuit
US4032949A (en) * 1975-05-15 1977-06-28 Raytheon Company Integrated circuit fusing technique
GB1532286A (en) * 1976-10-07 1978-11-15 Elliott Bros Manufacture of electro-luminescent display devices
NL8002634A (nl) * 1980-05-08 1981-12-01 Philips Nv Programmeerbare halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
US4412308A (en) * 1981-06-15 1983-10-25 International Business Machines Corporation Programmable bipolar structures
US4518981A (en) * 1981-11-12 1985-05-21 Advanced Micro Devices, Inc. Merged platinum silicide fuse and Schottky diode and method of manufacture thereof
US4974048A (en) * 1989-03-10 1990-11-27 The Boeing Company Integrated circuit having reroutable conductive paths
US5139883A (en) * 1989-05-09 1992-08-18 Grigory Raykhtsaum Intermetallic time-temperature integration fuse
US5247735A (en) * 1991-12-18 1993-09-28 International Business Machines Corporation Electrical wire deletion
US5914648A (en) * 1995-03-07 1999-06-22 Caddock Electronics, Inc. Fault current fusing resistor and method
US6059917A (en) * 1995-12-08 2000-05-09 Texas Instruments Incorporated Control of parallelism during semiconductor die attach
US5731624A (en) * 1996-06-28 1998-03-24 International Business Machines Corporation Integrated pad and fuse structure for planar copper metallurgy

Also Published As

Publication number Publication date
FR1585038A (cg-RX-API-DMAC7.html) 1970-01-09
US3555365A (en) 1971-01-12
DE1764378A1 (de) 1972-03-23
YU32377B (en) 1974-10-31
GB1220843A (en) 1971-01-27
YU123568A (en) 1974-04-30
DE1764378B2 (de) 1973-05-17
SU473387A3 (ru) 1975-06-05

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
EHJ Ceased/non-payment of the annual fee