DE1639146C3 - Verfahren zur Herstellung einer elektrolumineszenten Halbleiterdiode mit p-n-Übergang - Google Patents

Verfahren zur Herstellung einer elektrolumineszenten Halbleiterdiode mit p-n-Übergang

Info

Publication number
DE1639146C3
DE1639146C3 DE1639146A DE1639146A DE1639146C3 DE 1639146 C3 DE1639146 C3 DE 1639146C3 DE 1639146 A DE1639146 A DE 1639146A DE 1639146 A DE1639146 A DE 1639146A DE 1639146 C3 DE1639146 C3 DE 1639146C3
Authority
DE
Germany
Prior art keywords
gallium phosphide
crystal
junction
semiconductor diode
resulting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1639146A
Other languages
German (de)
English (en)
Other versions
DE1639146B2 (de
DE1639146A1 (de
Inventor
Ralph Andre Morristown Logan
Harry Gregory Bernardsville White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE1639146A1 publication Critical patent/DE1639146A1/de
Publication of DE1639146B2 publication Critical patent/DE1639146B2/de
Application granted granted Critical
Publication of DE1639146C3 publication Critical patent/DE1639146C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Led Devices (AREA)
DE1639146A 1967-02-17 1968-02-15 Verfahren zur Herstellung einer elektrolumineszenten Halbleiterdiode mit p-n-Übergang Expired DE1639146C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61696667A 1967-02-17 1967-02-17

Publications (3)

Publication Number Publication Date
DE1639146A1 DE1639146A1 (de) 1972-03-02
DE1639146B2 DE1639146B2 (de) 1972-11-30
DE1639146C3 true DE1639146C3 (de) 1974-08-22

Family

ID=24471723

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1639146A Expired DE1639146C3 (de) 1967-02-17 1968-02-15 Verfahren zur Herstellung einer elektrolumineszenten Halbleiterdiode mit p-n-Übergang

Country Status (7)

Country Link
US (1) US3470038A (enExample)
BE (1) BE710310A (enExample)
DE (1) DE1639146C3 (enExample)
FR (1) FR1552749A (enExample)
GB (1) GB1213017A (enExample)
NL (1) NL150272B (enExample)
SE (1) SE337257B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3540941A (en) * 1967-12-01 1970-11-17 Ibm Method of heat treating semiconductor electroluminescent devices
US3619304A (en) * 1968-08-30 1971-11-09 Tokyo Shibaura Electric Co Method of manufacturing gallium phosphide electro luminescent diodes
BE754437A (fr) * 1969-08-08 1971-01-18 Western Electric Co Dispositif electroluminescent ameliore
US3603833A (en) * 1970-02-16 1971-09-07 Bell Telephone Labor Inc Electroluminescent junction semiconductor with controllable combination colors
US3751309A (en) * 1971-03-29 1973-08-07 Bell Telephone Labor Inc The use of a glass dopant for gap and electroluminescent diodes produced thereby
US3974002A (en) * 1974-06-10 1976-08-10 Bell Telephone Laboratories, Incorporated MBE growth: gettering contaminants and fabricating heterostructure junction lasers
US7204050B2 (en) * 2003-12-29 2007-04-17 Sargent Manufacturing Company Exit device with lighted touchpad

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL133151C (enExample) * 1959-05-28 1900-01-01
US3411946A (en) * 1963-09-05 1968-11-19 Raytheon Co Process and apparatus for producing an intermetallic compound
US3278342A (en) * 1963-10-14 1966-10-11 Westinghouse Electric Corp Method of growing crystalline members completely within the solution melt

Also Published As

Publication number Publication date
DE1639146B2 (de) 1972-11-30
NL6801530A (enExample) 1968-08-19
BE710310A (enExample) 1968-06-17
NL150272B (nl) 1976-07-15
GB1213017A (en) 1970-11-18
DE1639146A1 (de) 1972-03-02
FR1552749A (enExample) 1969-01-03
SE337257B (enExample) 1971-08-02
US3470038A (en) 1969-09-30

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
8339 Ceased/non-payment of the annual fee