DE1621599C2 - Einrichtung zum Abtragen von Verunrei nigungen einer auf einem Halbleiterkörper aufgebrachten metallischen Schicht im Be reich von kleinen Offnungen einer Isolier schicht durch Kathodenzerstäubung - Google Patents
Einrichtung zum Abtragen von Verunrei nigungen einer auf einem Halbleiterkörper aufgebrachten metallischen Schicht im Be reich von kleinen Offnungen einer Isolier schicht durch KathodenzerstäubungInfo
- Publication number
- DE1621599C2 DE1621599C2 DE1621599A DE1621599A DE1621599C2 DE 1621599 C2 DE1621599 C2 DE 1621599C2 DE 1621599 A DE1621599 A DE 1621599A DE 1621599 A DE1621599 A DE 1621599A DE 1621599 C2 DE1621599 C2 DE 1621599C2
- Authority
- DE
- Germany
- Prior art keywords
- mask
- insulating layer
- openings
- layer
- semiconductor component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 38
- 238000004544 sputter deposition Methods 0.000 title claims description 7
- 239000012535 impurity Substances 0.000 title claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 239000011733 molybdenum Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 44
- 238000000034 method Methods 0.000 description 15
- 239000011521 glass Substances 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000000889 atomisation Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 6
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- -1 argon ions Chemical class 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical compound OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010410 dusting Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US502986A US3410774A (en) | 1965-10-23 | 1965-10-23 | Method and apparatus for reverse sputtering selected electrically exposed areas of a cathodically biased workpiece |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1621599B1 DE1621599B1 (de) | 1973-05-24 |
| DE1621599C2 true DE1621599C2 (de) | 1973-12-06 |
Family
ID=24000292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1621599A Expired DE1621599C2 (de) | 1965-10-23 | 1966-10-19 | Einrichtung zum Abtragen von Verunrei nigungen einer auf einem Halbleiterkörper aufgebrachten metallischen Schicht im Be reich von kleinen Offnungen einer Isolier schicht durch Kathodenzerstäubung |
Country Status (7)
Families Citing this family (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3502562A (en) * | 1967-04-19 | 1970-03-24 | Corning Glass Works | Multiple cathode sputtering fixture |
| US3507774A (en) * | 1967-06-02 | 1970-04-21 | Nat Res Corp | Low energy sputtering apparatus for operation below one micron pressure |
| US3528906A (en) * | 1967-06-05 | 1970-09-15 | Texas Instruments Inc | Rf sputtering method and system |
| US3708418A (en) * | 1970-03-05 | 1973-01-02 | Rca Corp | Apparatus for etching of thin layers of material by ion bombardment |
| US3676317A (en) * | 1970-10-23 | 1972-07-11 | Stromberg Datagraphix Inc | Sputter etching process |
| FR2128140B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1971-03-05 | 1976-04-16 | Alsthom Cgee | |
| DE2117199C3 (de) * | 1971-04-08 | 1974-08-22 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren zur Herstellung geätzter Muster in dünnen Schichten mit definierten Kantenprofilen |
| US4157465A (en) * | 1972-01-10 | 1979-06-05 | Smiths Industries Limited | Gas-lubricated bearings |
| US3897324A (en) * | 1973-06-25 | 1975-07-29 | Honeywell Inc | Material deposition masking for microcircuit structures |
| US4012307A (en) * | 1975-12-05 | 1977-03-15 | General Dynamics Corporation | Method for conditioning drilled holes in multilayer wiring boards |
| US4277321A (en) * | 1979-04-23 | 1981-07-07 | Bell Telephone Laboratories, Incorporated | Treating multilayer printed wiring boards |
| US4340461A (en) * | 1980-09-10 | 1982-07-20 | International Business Machines Corp. | Modified RIE chamber for uniform silicon etching |
| US4391034A (en) * | 1980-12-22 | 1983-07-05 | Ibm Corporation | Thermally compensated shadow mask |
| US4426274A (en) | 1981-06-02 | 1984-01-17 | International Business Machines Corporation | Reactive ion etching apparatus with interlaced perforated anode |
| US4654118A (en) * | 1986-03-17 | 1987-03-31 | The United States Of America As Represented By The Secretary Of The Army | Selectively etching microstructures in a glow discharge plasma |
| US4824544A (en) * | 1987-10-29 | 1989-04-25 | International Business Machines Corporation | Large area cathode lift-off sputter deposition device |
| US5341980A (en) * | 1990-02-19 | 1994-08-30 | Hitachi, Ltd. | Method of fabricating electronic circuit device and apparatus for performing the same method |
| CA2032763C (en) * | 1990-12-20 | 2001-08-21 | Mitel Corporation | Prevention of via poisoning by glow discharge induced desorption |
| US5340015A (en) * | 1993-03-22 | 1994-08-23 | Westinghouse Electric Corp. | Method for applying brazing filler metals |
| US5415753A (en) * | 1993-07-22 | 1995-05-16 | Materials Research Corporation | Stationary aperture plate for reactive sputter deposition |
| US5527438A (en) * | 1994-12-16 | 1996-06-18 | Applied Materials, Inc. | Cylindrical sputtering shield |
| JP3523405B2 (ja) * | 1996-01-26 | 2004-04-26 | 株式会社日立製作所 | 荷電ビーム処理によるパターン形成方法及び荷電ビーム処理装置 |
| US6287977B1 (en) | 1998-07-31 | 2001-09-11 | Applied Materials, Inc. | Method and apparatus for forming improved metal interconnects |
| US6193855B1 (en) | 1999-10-19 | 2001-02-27 | Applied Materials, Inc. | Use of modulated inductive power and bias power to reduce overhang and improve bottom coverage |
| US6350353B2 (en) | 1999-11-24 | 2002-02-26 | Applied Materials, Inc. | Alternate steps of IMP and sputtering process to improve sidewall coverage |
| US6344419B1 (en) | 1999-12-03 | 2002-02-05 | Applied Materials, Inc. | Pulsed-mode RF bias for sidewall coverage improvement |
| US6554979B2 (en) | 2000-06-05 | 2003-04-29 | Applied Materials, Inc. | Method and apparatus for bias deposition in a modulating electric field |
| US6521897B1 (en) * | 2000-11-17 | 2003-02-18 | The Regents Of The University Of California | Ion beam collimating grid to reduce added defects |
| US6746591B2 (en) | 2001-10-16 | 2004-06-08 | Applied Materials Inc. | ECP gap fill by modulating the voltate on the seed layer to increase copper concentration inside feature |
| WO2003036703A1 (en) * | 2001-10-22 | 2003-05-01 | Unaxis Usa, Inc. | Process and apparatus for etching of thin, damage sensitive layers using high frequency pulsed plasma |
| JP4710774B2 (ja) * | 2005-11-09 | 2011-06-29 | 株式会社日立製作所 | 研磨定盤の製造方法 |
| US9779643B2 (en) | 2012-02-15 | 2017-10-03 | Microsoft Technology Licensing, Llc | Imaging structure emitter configurations |
| US9578318B2 (en) | 2012-03-14 | 2017-02-21 | Microsoft Technology Licensing, Llc | Imaging structure emitter calibration |
| US11068049B2 (en) | 2012-03-23 | 2021-07-20 | Microsoft Technology Licensing, Llc | Light guide display and field of view |
| US10191515B2 (en) | 2012-03-28 | 2019-01-29 | Microsoft Technology Licensing, Llc | Mobile device light guide display |
| US9558590B2 (en) | 2012-03-28 | 2017-01-31 | Microsoft Technology Licensing, Llc | Augmented reality light guide display |
| US9717981B2 (en) | 2012-04-05 | 2017-08-01 | Microsoft Technology Licensing, Llc | Augmented reality and physical games |
| US10502876B2 (en) | 2012-05-22 | 2019-12-10 | Microsoft Technology Licensing, Llc | Waveguide optics focus elements |
| US10192358B2 (en) | 2012-12-20 | 2019-01-29 | Microsoft Technology Licensing, Llc | Auto-stereoscopic augmented reality display |
| US10324733B2 (en) | 2014-07-30 | 2019-06-18 | Microsoft Technology Licensing, Llc | Shutdown notifications |
| US20160035539A1 (en) * | 2014-07-30 | 2016-02-04 | Lauri SAINIEMI | Microfabrication |
| US10592080B2 (en) | 2014-07-31 | 2020-03-17 | Microsoft Technology Licensing, Llc | Assisted presentation of application windows |
| US10678412B2 (en) | 2014-07-31 | 2020-06-09 | Microsoft Technology Licensing, Llc | Dynamic joint dividers for application windows |
| US9787576B2 (en) | 2014-07-31 | 2017-10-10 | Microsoft Technology Licensing, Llc | Propagating routing awareness for autonomous networks |
| US10254942B2 (en) | 2014-07-31 | 2019-04-09 | Microsoft Technology Licensing, Llc | Adaptive sizing and positioning of application windows |
| US9414417B2 (en) | 2014-08-07 | 2016-08-09 | Microsoft Technology Licensing, Llc | Propagating communication awareness over a cellular network |
| US11086216B2 (en) | 2015-02-09 | 2021-08-10 | Microsoft Technology Licensing, Llc | Generating electronic components |
| US10317677B2 (en) | 2015-02-09 | 2019-06-11 | Microsoft Technology Licensing, Llc | Display system |
| US10018844B2 (en) | 2015-02-09 | 2018-07-10 | Microsoft Technology Licensing, Llc | Wearable image display system |
| US9827209B2 (en) | 2015-02-09 | 2017-11-28 | Microsoft Technology Licensing, Llc | Display system |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2702274A (en) * | 1951-04-02 | 1955-02-15 | Rca Corp | Method of making an electrode screen by cathode sputtering |
| US3087838A (en) * | 1955-10-05 | 1963-04-30 | Hupp Corp | Methods of photoelectric cell manufacture |
| DE1083617B (de) * | 1956-07-27 | 1960-06-15 | Gen Motors Corp | Verfahren zum Herstellen poroeser Oberflaechen auf chromierten Zylinderbuechsen von Verbrennungsmotoren |
| GB1054660A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1963-09-16 | |||
| US3361659A (en) * | 1967-08-14 | 1968-01-02 | Ibm | Process of depositing thin films by cathode sputtering using a controlled grid |
-
1965
- 1965-10-23 US US502986A patent/US3410774A/en not_active Expired - Lifetime
-
1966
- 1966-09-20 GB GB41823/66A patent/GB1157989A/en not_active Expired
- 1966-09-27 NL NL666613583A patent/NL154560B/xx unknown
- 1966-10-19 DE DE1621599A patent/DE1621599C2/de not_active Expired
- 1966-10-21 CH CH1534466A patent/CH447760A/de unknown
- 1966-10-21 BE BE688703D patent/BE688703A/xx unknown
- 1966-11-20 FR FR8091A patent/FR1501165A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3410774A (en) | 1968-11-12 |
| DE1621599B1 (de) | 1973-05-24 |
| FR1501165A (fr) | 1967-11-10 |
| NL6613583A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1967-04-24 |
| BE688703A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1967-03-31 |
| CH447760A (de) | 1967-11-30 |
| NL154560B (nl) | 1977-09-15 |
| GB1157989A (en) | 1969-07-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| E77 | Valid patent as to the heymanns-index 1977 | ||
| EHJ | Ceased/non-payment of the annual fee |