DE1619956B2 - Vorrichtung zum abscheiden von halbleiterkristallen auf einer halbleiterkristallunterlage - Google Patents
Vorrichtung zum abscheiden von halbleiterkristallen auf einer halbleiterkristallunterlageInfo
- Publication number
- DE1619956B2 DE1619956B2 DE19671619956 DE1619956A DE1619956B2 DE 1619956 B2 DE1619956 B2 DE 1619956B2 DE 19671619956 DE19671619956 DE 19671619956 DE 1619956 A DE1619956 A DE 1619956A DE 1619956 B2 DE1619956 B2 DE 1619956B2
- Authority
- DE
- Germany
- Prior art keywords
- recesses
- holder
- reaction gas
- semiconductor
- rings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 239000013078 crystal Substances 0.000 title claims description 13
- 238000000151 deposition Methods 0.000 title claims description 13
- 239000012495 reaction gas Substances 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 238000000354 decomposition reaction Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 239000000463 material Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000002445 nipple Anatomy 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/071—Heating, selective
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US54950166A | 1966-05-12 | 1966-05-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1619956A1 DE1619956A1 (de) | 1970-09-17 |
| DE1619956B2 true DE1619956B2 (de) | 1971-08-19 |
Family
ID=24193262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19671619956 Pending DE1619956B2 (de) | 1966-05-12 | 1967-02-21 | Vorrichtung zum abscheiden von halbleiterkristallen auf einer halbleiterkristallunterlage |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3460510A (ref) |
| BE (1) | BE698329A (ref) |
| DE (1) | DE1619956B2 (ref) |
| FR (1) | FR1522791A (ref) |
| GB (1) | GB1125061A (ref) |
| NL (1) | NL6702889A (ref) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1929422B2 (de) * | 1969-06-10 | 1974-08-15 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Vorrichtung zum epitaktischen Abscheiden von Halbleitermaterial |
| US4496609A (en) * | 1969-10-15 | 1985-01-29 | Applied Materials, Inc. | Chemical vapor deposition coating process employing radiant heat and a susceptor |
| US3696779A (en) * | 1969-12-29 | 1972-10-10 | Kokusai Electric Co Ltd | Vapor growth device |
| US3645230A (en) * | 1970-03-05 | 1972-02-29 | Hugle Ind Inc | Chemical deposition apparatus |
| DE2054538C3 (de) * | 1970-11-05 | 1979-03-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Abscheiden von Schichten aus Halbleitermaterial |
| US3690290A (en) * | 1971-04-29 | 1972-09-12 | Motorola Inc | Apparatus for providing epitaxial layers on a substrate |
| US3796182A (en) * | 1971-12-16 | 1974-03-12 | Applied Materials Tech | Susceptor structure for chemical vapor deposition reactor |
| US4034705A (en) * | 1972-05-16 | 1977-07-12 | Siemens Aktiengesellschaft | Shaped bodies and production of semiconductor material |
| US3865072A (en) * | 1973-10-18 | 1975-02-11 | Hls Ind | Apparatus for chemically depositing epitaxial layers on semiconductor substrates |
| JPS50119566A (ref) * | 1974-03-01 | 1975-09-19 | ||
| US4047496A (en) * | 1974-05-31 | 1977-09-13 | Applied Materials, Inc. | Epitaxial radiation heated reactor |
| US4081313A (en) * | 1975-01-24 | 1978-03-28 | Applied Materials, Inc. | Process for preparing semiconductor wafers with substantially no crystallographic slip |
| US4186684A (en) * | 1977-06-01 | 1980-02-05 | Ralph Gorman | Apparatus for vapor deposition of materials |
| US4401689A (en) * | 1980-01-31 | 1983-08-30 | Rca Corporation | Radiation heated reactor process for chemical vapor deposition on substrates |
| US4263872A (en) * | 1980-01-31 | 1981-04-28 | Rca Corporation | Radiation heated reactor for chemical vapor deposition on substrates |
| US4322592A (en) * | 1980-08-22 | 1982-03-30 | Rca Corporation | Susceptor for heating semiconductor substrates |
| US4565157A (en) * | 1983-03-29 | 1986-01-21 | Genus, Inc. | Method and apparatus for deposition of tungsten silicides |
| US4920908A (en) * | 1983-03-29 | 1990-05-01 | Genus, Inc. | Method and apparatus for deposition of tungsten silicides |
| JPS60116778A (ja) * | 1983-11-23 | 1985-06-24 | ジエミニ リサーチ，インコーポレイテツド | 化学蒸着方法及び装置 |
| US4649261A (en) * | 1984-02-28 | 1987-03-10 | Tamarack Scientific Co., Inc. | Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc. |
| US4698486A (en) * | 1984-02-28 | 1987-10-06 | Tamarack Scientific Co., Inc. | Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc. |
| US4615294A (en) * | 1984-07-31 | 1986-10-07 | Hughes Aircraft Company | Barrel reactor and method for photochemical vapor deposition |
| US4597986A (en) * | 1984-07-31 | 1986-07-01 | Hughes Aircraft Company | Method for photochemical vapor deposition |
| JPS6169962A (ja) * | 1984-09-13 | 1986-04-10 | Agency Of Ind Science & Technol | 霧化薄膜作製装置 |
| US4694779A (en) * | 1984-10-19 | 1987-09-22 | Tetron, Inc. | Reactor apparatus for semiconductor wafer processing |
| US4653428A (en) * | 1985-05-10 | 1987-03-31 | General Electric Company | Selective chemical vapor deposition apparatus |
| US4796562A (en) * | 1985-12-03 | 1989-01-10 | Varian Associates, Inc. | Rapid thermal cvd apparatus |
| US4709655A (en) * | 1985-12-03 | 1987-12-01 | Varian Associates, Inc. | Chemical vapor deposition apparatus |
| US4926793A (en) * | 1986-12-15 | 1990-05-22 | Shin-Etsu Handotai Co., Ltd. | Method of forming thin film and apparatus therefor |
| FR2618799B1 (fr) * | 1987-07-27 | 1989-12-29 | Inst Nat Rech Chimique | Reacteur de depot en phase vapeur |
| US5169478A (en) * | 1987-10-08 | 1992-12-08 | Friendtech Laboratory, Ltd. | Apparatus for manufacturing semiconductor devices |
| US6096998A (en) | 1996-09-17 | 2000-08-01 | Micron Technology, Inc. | Method and apparatus for performing thermal reflow operations under high gravity conditions |
| US6440220B1 (en) * | 1998-10-23 | 2002-08-27 | Goodrich Corporation | Method and apparatus for inhibiting infiltration of a reactive gas into porous refractory insulation |
| US6594446B2 (en) * | 2000-12-04 | 2003-07-15 | Vortek Industries Ltd. | Heat-treating methods and systems |
| CN100416243C (zh) | 2001-12-26 | 2008-09-03 | 加拿大马特森技术有限公司 | 测量温度和热处理的方法及系统 |
| US9627244B2 (en) | 2002-12-20 | 2017-04-18 | Mattson Technology, Inc. | Methods and systems for supporting a workpiece and for heat-treating the workpiece |
| JP5630935B2 (ja) | 2003-12-19 | 2014-11-26 | マトソン テクノロジー、インコーポレイテッド | 工作物の熱誘起運動を抑制する機器及び装置 |
| ES2268974B2 (es) * | 2005-06-16 | 2007-12-01 | Universidad Politecnica De Madrid | Reactor epitaxial para la produccion de obleas a gran escala. |
| US8454356B2 (en) | 2006-11-15 | 2013-06-04 | Mattson Technology, Inc. | Systems and methods for supporting a workpiece during heat-treating |
| US9070590B2 (en) | 2008-05-16 | 2015-06-30 | Mattson Technology, Inc. | Workpiece breakage prevention method and apparatus |
| JP5310512B2 (ja) * | 2009-12-02 | 2013-10-09 | 東京エレクトロン株式会社 | 基板処理装置 |
| TW201122148A (en) * | 2009-12-24 | 2011-07-01 | Hon Hai Prec Ind Co Ltd | Chemical vapor deposition device |
| US9315895B2 (en) * | 2010-05-10 | 2016-04-19 | Mitsubishi Materials Corporation | Apparatus for producing polycrystalline silicon |
| US9029737B2 (en) * | 2013-01-04 | 2015-05-12 | Tsmc Solar Ltd. | Method and system for forming absorber layer on metal coated glass for photovoltaic devices |
| JP7230494B2 (ja) * | 2018-12-21 | 2023-03-01 | 富士フイルムビジネスイノベーション株式会社 | 膜形成装置、および膜形成方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL101577C (ref) * | 1957-12-31 | 1900-01-01 | ||
| US3131098A (en) * | 1960-10-26 | 1964-04-28 | Merck & Co Inc | Epitaxial deposition on a substrate placed in a socket of the carrier member |
| US3206331A (en) * | 1961-04-25 | 1965-09-14 | Gen Electric | Method for coating articles with pyrolitic graphite |
| DE1137807B (de) * | 1961-06-09 | 1962-10-11 | Siemens Ag | Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase |
| US3220380A (en) * | 1961-08-21 | 1965-11-30 | Merck & Co Inc | Deposition chamber including heater element enveloped by a quartz workholder |
| US3190771A (en) * | 1962-01-11 | 1965-06-22 | Electra Mfg Company | Filament for vacuum deposition apparatus and method of making it |
| US3361591A (en) * | 1964-04-15 | 1968-01-02 | Hughes Aircraft Co | Production of thin films of cadmium sulfide, cadmium telluride or cadmium selenide |
-
1966
- 1966-05-12 US US549501A patent/US3460510A/en not_active Expired - Lifetime
-
1967
- 1967-01-18 GB GB2667/67A patent/GB1125061A/en not_active Expired
- 1967-02-21 DE DE19671619956 patent/DE1619956B2/de active Pending
- 1967-02-24 NL NL6702889A patent/NL6702889A/xx unknown
- 1967-05-11 BE BE698329D patent/BE698329A/xx unknown
- 1967-05-11 FR FR106139A patent/FR1522791A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3460510A (en) | 1969-08-12 |
| BE698329A (ref) | 1967-11-13 |
| NL6702889A (ref) | 1967-11-13 |
| FR1522791A (fr) | 1968-04-26 |
| DE1619956A1 (de) | 1970-09-17 |
| GB1125061A (en) | 1968-08-28 |
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