DE1596820C2 - Glas auf der Basis von ZnO-B tief 2 O tief 3 -SiO tief 2 mit einem thermischen Ausdehnungskoeffizienten von 44,5 bis 44,8.10 hoch -7 / Grad C (0-300 Grad C) und seine Verwendung - Google Patents

Glas auf der Basis von ZnO-B tief 2 O tief 3 -SiO tief 2 mit einem thermischen Ausdehnungskoeffizienten von 44,5 bis 44,8.10 hoch -7 / Grad C (0-300 Grad C) und seine Verwendung

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Publication number
DE1596820C2
DE1596820C2 DE1596820A DEG0048017A DE1596820C2 DE 1596820 C2 DE1596820 C2 DE 1596820C2 DE 1596820 A DE1596820 A DE 1596820A DE G0048017 A DEG0048017 A DE G0048017A DE 1596820 C2 DE1596820 C2 DE 1596820C2
Authority
DE
Germany
Prior art keywords
percent
weight
oxide
glass
deep
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1596820A
Other languages
German (de)
English (en)
Other versions
DE1596820B1 (de
Inventor
William Arthur Willoughby Ohio Graff
Norman Eugene De Sodus Point N.Y. Volder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE1596820B1 publication Critical patent/DE1596820B1/de
Application granted granted Critical
Publication of DE1596820C2 publication Critical patent/DE1596820C2/de
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0054—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing PbO, SnO2, B2O3
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
    • C03C3/068—Glass compositions containing silica with less than 40% silica by weight containing boron containing rare earths
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
    • C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
    • C03C3/074—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/08—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances quartz; glass; glass wool; slag wool; vitreous enamels
    • H01B3/087—Chemical composition of glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Glass Compositions (AREA)
DE1596820A 1965-09-30 1966-09-28 Glas auf der Basis von ZnO-B tief 2 O tief 3 -SiO tief 2 mit einem thermischen Ausdehnungskoeffizienten von 44,5 bis 44,8.10 hoch -7 / Grad C (0-300 Grad C) und seine Verwendung Expired DE1596820C2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US49189965A 1965-09-30 1965-09-30
US53521966A 1966-03-17 1966-03-17
US56783466A 1966-07-26 1966-07-26

Publications (2)

Publication Number Publication Date
DE1596820B1 DE1596820B1 (de) 1971-05-19
DE1596820C2 true DE1596820C2 (de) 1974-01-31

Family

ID=27413916

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1596820A Expired DE1596820C2 (de) 1965-09-30 1966-09-28 Glas auf der Basis von ZnO-B tief 2 O tief 3 -SiO tief 2 mit einem thermischen Ausdehnungskoeffizienten von 44,5 bis 44,8.10 hoch -7 / Grad C (0-300 Grad C) und seine Verwendung

Country Status (5)

Country Link
US (2) US3505571A (en, 2012)
DE (1) DE1596820C2 (en, 2012)
FR (1) FR1499490A (en, 2012)
GB (1) GB1114549A (en, 2012)
NL (1) NL148289B (en, 2012)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IE33405B1 (en) * 1968-12-09 1974-06-12 Gen Electric Semiconductor wafers sub-dividable into pellets and methods of fabricating same
FR2096669B1 (en, 2012) * 1970-05-19 1974-03-01 Gen Electric
US3643136A (en) * 1970-05-22 1972-02-15 Gen Electric Glass passivated double beveled semiconductor device with partially spaced preform
IE35247B1 (en) * 1970-06-08 1975-12-24 Gen Electric Improvements in ceramic passivated semi-conductor device and process for its manufacture
US3710205A (en) * 1971-04-09 1973-01-09 Westinghouse Electric Corp Electronic components having improved ionic stability
US3731159A (en) * 1971-05-19 1973-05-01 Anheuser Busch Microwave diode with low capacitance package
US3913127A (en) * 1971-10-01 1975-10-14 Hitachi Ltd Glass encapsulated semiconductor device containing cylindrical stack of semiconductor pellets
US3755720A (en) * 1972-09-25 1973-08-28 Rca Corp Glass encapsulated semiconductor device
US3900330A (en) * 1973-03-22 1975-08-19 Nippon Electric Glass Co Zno-b' 2'o' 3'-sio' 2 'glass coating compositions containing ta' 2'o' 5 'and a semiconductor device coated with the same
US3996602A (en) * 1975-08-14 1976-12-07 General Instrument Corporation Passivated and encapsulated semiconductors and method of making same
JPS5819125B2 (ja) * 1976-08-11 1983-04-16 株式会社日立製作所 半導体装置の製造方法
US9421303B2 (en) * 2013-03-06 2016-08-23 Covalent Coating Technologies, LLC Fusion of biocompatible glass/ceramic to metal substrate
KR102588111B1 (ko) * 2015-12-17 2023-10-12 니폰 덴키 가라스 가부시키가이샤 지지 유리 기판의 제조 방법
CN105541116A (zh) * 2015-12-29 2016-05-04 江苏建达恩电子科技有限公司 用于包裹电子芯片的玻璃粉及其制备方法
CN111051256A (zh) * 2017-07-31 2020-04-21 康宁股份有限公司 具有非玻璃芯体和玻璃包封物的层压制品及其方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2971853A (en) * 1953-03-05 1961-02-14 Corning Glass Works Ceramic body and method of making it
US2889952A (en) * 1956-02-01 1959-06-09 Corning Glass Works Composite article and method
US3200310A (en) * 1959-09-22 1965-08-10 Carman Lab Inc Glass encapsulated semiconductor device
US3050666A (en) * 1959-11-13 1962-08-21 Diodes Inc Yieldable electrode for semiconductor devices
NL109459C (en, 2012) * 1960-01-26
US3307958A (en) * 1960-04-11 1967-03-07 Physical Sciences Corp Ceramic material
US3256136A (en) * 1961-05-11 1966-06-14 Cons Electrodynamics Corp Ceramic material
US3088835A (en) * 1961-09-15 1963-05-07 Owens Illinois Glass Co Thermally devitrifiable sealing glasses
US3303399A (en) * 1964-01-30 1967-02-07 Ibm Glasses for encapsulating semiconductor devices and resultant devices
US3241010A (en) * 1962-03-23 1966-03-15 Texas Instruments Inc Semiconductor junction passivation
US3250631A (en) * 1962-12-26 1966-05-10 Owens Illinois Company Glass sealing compositions and method for modifying same
US3300339A (en) * 1962-12-31 1967-01-24 Ibm Method of covering the surfaces of objects with protective glass jackets and the objects produced thereby
US3392312A (en) * 1963-11-06 1968-07-09 Carman Lab Inc Glass encapsulated electronic devices
US3317653A (en) * 1965-05-07 1967-05-02 Cts Corp Electrical component and method of making the same
US3408212A (en) * 1965-06-04 1968-10-29 Fairchild Camera Instr Co Low melting oxide glass

Also Published As

Publication number Publication date
GB1114549A (en) 1968-05-22
US3441422A (en) 1969-04-29
DE1596820B1 (de) 1971-05-19
NL6612992A (en, 2012) 1967-03-31
FR1499490A (fr) 1967-10-27
US3505571A (en) 1970-04-07
NL148289B (nl) 1976-01-15

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Legal Events

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E77 Valid patent as to the heymanns-index 1977
8320 Willingness to grant licences declared (paragraph 23)