DE1589478A1 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
DE1589478A1
DE1589478A1 DE19671589478 DE1589478A DE1589478A1 DE 1589478 A1 DE1589478 A1 DE 1589478A1 DE 19671589478 DE19671589478 DE 19671589478 DE 1589478 A DE1589478 A DE 1589478A DE 1589478 A1 DE1589478 A1 DE 1589478A1
Authority
DE
Germany
Prior art keywords
layer
connection
thyristor
auxiliary contact
ignition current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19671589478
Other languages
German (de)
English (en)
Inventor
Per Svedberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB Norden Holding AB
Original Assignee
ASEA AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASEA AB filed Critical ASEA AB
Publication of DE1589478A1 publication Critical patent/DE1589478A1/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36Unipolar devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/129Cathode regions of diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60Impurity distributions or concentrations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00Bonding of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07541Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions

Landscapes

  • Thyristors (AREA)
DE19671589478 1966-10-25 1967-10-20 Halbleiteranordnung Pending DE1589478A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE1460666A SE335389B (enExample) 1966-10-25 1966-10-25

Publications (1)

Publication Number Publication Date
DE1589478A1 true DE1589478A1 (de) 1970-04-09

Family

ID=20299378

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19671589478 Pending DE1589478A1 (de) 1966-10-25 1967-10-20 Halbleiteranordnung

Country Status (6)

Country Link
US (1) US3566211A (enExample)
CH (1) CH478459A (enExample)
DE (1) DE1589478A1 (enExample)
GB (1) GB1193096A (enExample)
NL (1) NL6714497A (enExample)
SE (1) SE335389B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH460957A (de) * 1967-08-03 1968-08-15 Bbc Brown Boveri & Cie Schaltungsanordnung mit mehreren Halbleiterelementen
US3978513A (en) * 1971-05-21 1976-08-31 Hitachi, Ltd. Semiconductor controlled rectifying device
BE787241A (fr) * 1971-08-06 1973-02-05 Siemens Ag Thyristor
DE2141627C3 (de) * 1971-08-19 1979-06-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
US3967308A (en) * 1971-10-01 1976-06-29 Hitachi, Ltd. Semiconductor controlled rectifier
JPS4936290A (enExample) * 1972-03-02 1974-04-04
JPS541437B2 (enExample) * 1973-04-18 1979-01-24
US3896476A (en) * 1973-05-02 1975-07-22 Mitsubishi Electric Corp Semiconductor switching device
GB1499203A (en) * 1975-02-04 1978-01-25 Standard Telephones Cables Ltd Thyristor structure to facilitate zero point switching
JPS5927108B2 (ja) * 1975-02-07 1984-07-03 株式会社日立製作所 半導体制御整流装置
US4012761A (en) * 1976-04-19 1977-03-15 General Electric Company Self-protected semiconductor device
DE2730612C2 (de) * 1977-07-07 1982-02-04 Brown, Boveri & Cie Ag, 6800 Mannheim Betriebsschaltung für einen Thyristor
GB2036429B (en) * 1978-03-23 1982-09-15 Bbc Brown Boveri & Cie Semiconductor device comprising at least two semiconductor elements
US4314266A (en) * 1978-07-20 1982-02-02 Electric Power Research Institute, Inc. Thyristor with voltage breakover current control separated from main emitter by current limit region
PT2819174T (pt) * 2013-06-24 2017-02-02 Silergy Corp Um tirístor, um método de acionamento de um tirístor, e circuitos de tirístor

Also Published As

Publication number Publication date
GB1193096A (en) 1970-05-28
SE335389B (enExample) 1971-05-24
CH478459A (de) 1969-09-15
US3566211A (en) 1971-02-23
NL6714497A (enExample) 1968-04-26

Similar Documents

Publication Publication Date Title
DE3011557C2 (de) Zweipoliger Überstromschutz
DE1589478A1 (de) Halbleiteranordnung
DE891580C (de) Lichtelektrische Halbleitereinrichtungen
DE2437428A1 (de) Schutzschaltung
DE2906721C2 (de) GTO-Thyristor
DE2506021A1 (de) Ueberspannungs-schutzschaltung fuer hochleistungsthyristoren
DE2143591C3 (de) Betätigungskreis zum verzögerten Ansprechen eines elektromagnetischen Relais
DE1564048C3 (de) Halbleiterschalter für niedrige Schaltspannungen
DE1589455A1 (de) Steuerbare Halbleiteranordnung
DE69220330T2 (de) Halbleiterbauelement zum Schutz gegen Überspannungen
DE1464983C2 (de) in zwei Richtungen schaltbares und steuerbares Halbleiterbauelement
EP0002840A1 (de) Kathodenseitig steuerbarer Thyristor mit einer Anodenzone aus zwei aneinandergrenzenden Bereichen mit unterschiedlicher Leitfähigkeit
DE1927834B2 (de) Thyristorschaltung
DE2238564C3 (de) Thyristor
DE1266891B (de) Strahlungsempfindliches P+NN+_Halbleiterbauelement
DE2822336A1 (de) Thyristor mit verstaerkender gateanordnung
AT332915B (de) Schaltungsanordnung fur die umsteuerung einer last
DE1573717A1 (de) Halbleiterbauelement
DE2449548A1 (de) Schutzanordnung fuer hauptthyristor vor vorwaerts-ueberspannung
DE1464979C3 (de) Halbleiterschaltelement
DE3104743A1 (de) Halbleiter-schaltvorrichtung
DE3120124C2 (enExample)
DE1573717C3 (de) Druckempfindliches Halbleiterbauelement
DE3837748C2 (de) Halbleiterschalter mit einem Hauptthyristor und einem lichtzündbaren Hilfsthyristor
DE1464982C (de) Steuerbarer Halbleitergleich richter