DE1564940B1 - Verfahren zur Herstellung einer Halb leiteranordnung sowie danach hergestellte Anordnung, insbesondere Transistor - Google Patents

Verfahren zur Herstellung einer Halb leiteranordnung sowie danach hergestellte Anordnung, insbesondere Transistor

Info

Publication number
DE1564940B1
DE1564940B1 DE19661564940 DE1564940A DE1564940B1 DE 1564940 B1 DE1564940 B1 DE 1564940B1 DE 19661564940 DE19661564940 DE 19661564940 DE 1564940 A DE1564940 A DE 1564940A DE 1564940 B1 DE1564940 B1 DE 1564940B1
Authority
DE
Germany
Prior art keywords
metal
semiconductor
areas
zone
metal areas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19661564940
Other languages
German (de)
English (en)
Inventor
George Gardner Richardson Tex Sumner (V St A )
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE1564940B1 publication Critical patent/DE1564940B1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13034—Silicon Controlled Rectifier [SCR]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
DE19661564940 1965-12-06 1966-12-01 Verfahren zur Herstellung einer Halb leiteranordnung sowie danach hergestellte Anordnung, insbesondere Transistor Pending DE1564940B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US51181765A 1965-12-06 1965-12-06

Publications (1)

Publication Number Publication Date
DE1564940B1 true DE1564940B1 (de) 1971-09-16

Family

ID=24036570

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19661564940 Pending DE1564940B1 (de) 1965-12-06 1966-12-01 Verfahren zur Herstellung einer Halb leiteranordnung sowie danach hergestellte Anordnung, insbesondere Transistor

Country Status (6)

Country Link
US (1) US3448349A (enExample)
JP (1) JPS5028790B1 (enExample)
DE (1) DE1564940B1 (enExample)
FR (1) FR1511577A (enExample)
GB (1) GB1160381A (enExample)
NL (1) NL6616876A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3634692A (en) * 1968-07-03 1972-01-11 Texas Instruments Inc Schottky barrier light sensitive storage device formed by random metal particles
JPS4812397B1 (enExample) * 1968-09-09 1973-04-20
US3656030A (en) * 1970-09-11 1972-04-11 Rca Corp Semiconductor device with plurality of small area contacts
US3700980A (en) * 1971-04-08 1972-10-24 Texas Instruments Inc Schottky barrier phototransistor
US3945110A (en) * 1973-08-23 1976-03-23 Hughes Aircraft Company Method of making an integrated optical detector
US3909929A (en) * 1973-12-26 1975-10-07 Gen Electric Method of making contacts to semiconductor light conversion elements
US3889286A (en) * 1973-12-26 1975-06-10 Gen Electric Transparent multiple contact for semiconductor light conversion elements
US3871008A (en) * 1973-12-26 1975-03-11 Gen Electric Reflective multiple contact for semiconductor light conversion elements
US3871016A (en) * 1973-12-26 1975-03-11 Gen Electric Reflective coated contact for semiconductor light conversion elements
US5206531A (en) * 1990-03-19 1993-04-27 Lockheed Sanders, Inc. Semiconductor device having a control gate with reduced semiconductor contact
CN119715685B (zh) * 2024-12-24 2025-09-26 中国科学院上海技术物理研究所 一种测定薄膜功函数的方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE829191C (de) * 1949-02-10 1952-01-24 Siemens Ag Halbleiter zu Gleichrichter- oder Verstaerkerzwecken
DE840407C (de) * 1944-07-20 1952-06-03 Western Electric Co Siliziumkoerper fuer elektrische Zwecke
DE973098C (de) * 1950-04-06 1959-12-03 Siemens Ag Verfahren zur Herstellung hochsperrender Kristallgleichrichter nach dem Prinzip des Vielfachspitzenkontaktes
CA605489A (en) * 1960-09-20 Jansen Bernard Method of making semi-conducting electrode systems
DE1163981B (de) * 1960-06-10 1964-02-27 Western Electric Co Verfahren zur Herstellung von Halbleiteranordnungen mit pn-UEbergang und einer epitaktischen Schicht auf dem Halbleiterkoerper
BE657021A (enExample) * 1963-12-17 1965-04-01

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3360851A (en) * 1965-10-01 1968-01-02 Bell Telephone Labor Inc Small area semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA605489A (en) * 1960-09-20 Jansen Bernard Method of making semi-conducting electrode systems
DE840407C (de) * 1944-07-20 1952-06-03 Western Electric Co Siliziumkoerper fuer elektrische Zwecke
DE829191C (de) * 1949-02-10 1952-01-24 Siemens Ag Halbleiter zu Gleichrichter- oder Verstaerkerzwecken
DE973098C (de) * 1950-04-06 1959-12-03 Siemens Ag Verfahren zur Herstellung hochsperrender Kristallgleichrichter nach dem Prinzip des Vielfachspitzenkontaktes
DE1163981B (de) * 1960-06-10 1964-02-27 Western Electric Co Verfahren zur Herstellung von Halbleiteranordnungen mit pn-UEbergang und einer epitaktischen Schicht auf dem Halbleiterkoerper
BE657021A (enExample) * 1963-12-17 1965-04-01

Also Published As

Publication number Publication date
US3448349A (en) 1969-06-03
NL6616876A (enExample) 1967-06-07
FR1511577A (fr) 1968-02-02
GB1160381A (en) 1969-08-06
JPS5028790B1 (enExample) 1975-09-18

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