JPS5028790B1 - - Google Patents

Info

Publication number
JPS5028790B1
JPS5028790B1 JP41079601A JP7960166A JPS5028790B1 JP S5028790 B1 JPS5028790 B1 JP S5028790B1 JP 41079601 A JP41079601 A JP 41079601A JP 7960166 A JP7960166 A JP 7960166A JP S5028790 B1 JPS5028790 B1 JP S5028790B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP41079601A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5028790B1 publication Critical patent/JPS5028790B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H10W72/20—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10W72/536—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP41079601A 1965-12-06 1966-12-06 Pending JPS5028790B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US51181765A 1965-12-06 1965-12-06

Publications (1)

Publication Number Publication Date
JPS5028790B1 true JPS5028790B1 (ja) 1975-09-18

Family

ID=24036570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP41079601A Pending JPS5028790B1 (ja) 1965-12-06 1966-12-06

Country Status (6)

Country Link
US (1) US3448349A (ja)
JP (1) JPS5028790B1 (ja)
DE (1) DE1564940B1 (ja)
FR (1) FR1511577A (ja)
GB (1) GB1160381A (ja)
NL (1) NL6616876A (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3634692A (en) * 1968-07-03 1972-01-11 Texas Instruments Inc Schottky barrier light sensitive storage device formed by random metal particles
JPS4812397B1 (ja) * 1968-09-09 1973-04-20
US3656030A (en) * 1970-09-11 1972-04-11 Rca Corp Semiconductor device with plurality of small area contacts
US3700980A (en) * 1971-04-08 1972-10-24 Texas Instruments Inc Schottky barrier phototransistor
US3945110A (en) * 1973-08-23 1976-03-23 Hughes Aircraft Company Method of making an integrated optical detector
US3871016A (en) * 1973-12-26 1975-03-11 Gen Electric Reflective coated contact for semiconductor light conversion elements
US3871008A (en) * 1973-12-26 1975-03-11 Gen Electric Reflective multiple contact for semiconductor light conversion elements
US3909929A (en) * 1973-12-26 1975-10-07 Gen Electric Method of making contacts to semiconductor light conversion elements
US3889286A (en) * 1973-12-26 1975-06-10 Gen Electric Transparent multiple contact for semiconductor light conversion elements
US5206531A (en) * 1990-03-19 1993-04-27 Lockheed Sanders, Inc. Semiconductor device having a control gate with reduced semiconductor contact
CN119715685B (zh) * 2024-12-24 2025-09-26 中国科学院上海技术物理研究所 一种测定薄膜功函数的方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA605489A (en) * 1960-09-20 Jansen Bernard Method of making semi-conducting electrode systems
US2485069A (en) * 1944-07-20 1949-10-18 Bell Telephone Labor Inc Translating material of silicon base
NL153395B (nl) * 1949-02-10 Contraves Ag Verbetering van een bistabiele trekkerschakeling.
DE973098C (de) * 1950-04-06 1959-12-03 Siemens Ag Verfahren zur Herstellung hochsperrender Kristallgleichrichter nach dem Prinzip des Vielfachspitzenkontaktes
NL258408A (ja) * 1960-06-10
NL134170C (ja) * 1963-12-17 1900-01-01
US3360851A (en) * 1965-10-01 1968-01-02 Bell Telephone Labor Inc Small area semiconductor device

Also Published As

Publication number Publication date
DE1564940B1 (de) 1971-09-16
FR1511577A (fr) 1968-02-02
NL6616876A (ja) 1967-06-07
US3448349A (en) 1969-06-03
GB1160381A (en) 1969-08-06

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