DE1564522A1 - Halbleitervorrichtung - Google Patents
HalbleitervorrichtungInfo
- Publication number
- DE1564522A1 DE1564522A1 DE19661564522 DE1564522A DE1564522A1 DE 1564522 A1 DE1564522 A1 DE 1564522A1 DE 19661564522 DE19661564522 DE 19661564522 DE 1564522 A DE1564522 A DE 1564522A DE 1564522 A1 DE1564522 A1 DE 1564522A1
- Authority
- DE
- Germany
- Prior art keywords
- emitter
- zone
- base
- zones
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title description 11
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 241000252335 Acipenser Species 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 208000018999 crinkle Diseases 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000013616 tea Nutrition 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/121—BJTs having built-in components
- H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
- H10D62/135—Non-interconnected multi-emitter structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/136—Resistors
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US44039765A | 1965-03-17 | 1965-03-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1564522A1 true DE1564522A1 (de) | 1972-01-20 |
Family
ID=23748599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19661564522 Pending DE1564522A1 (de) | 1965-03-17 | 1966-03-10 | Halbleitervorrichtung |
Country Status (8)
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6706641A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1966-11-07 | 1968-11-13 | ||
| US3519898A (en) * | 1967-01-31 | 1970-07-07 | Nippon Electric Co | High power semiconductor device having a plurality of emitter regions |
| US3582726A (en) * | 1969-09-03 | 1971-06-01 | Microwave Semiconductor Corp | High frequency power transistor having a plurality of discrete base areas |
| DE1955954A1 (de) * | 1969-11-06 | 1971-05-13 | Siemens Ag | Kontaktanordnung |
| US3684933A (en) * | 1971-06-21 | 1972-08-15 | Itt | Semiconductor device showing at least three successive zones of alternate opposite conductivity type |
| US3740621A (en) * | 1971-08-30 | 1973-06-19 | Rca Corp | Transistor employing variable resistance ballasting means dependent on the magnitude of the emitter current |
| US3878550A (en) * | 1972-10-27 | 1975-04-15 | Raytheon Co | Microwave power transistor |
| GB1558281A (en) * | 1975-07-31 | 1979-12-19 | Tokyo Shibaura Electric Co | Semiconductor device and logic circuit constituted by the semiconductor device |
| FR2417854A1 (fr) * | 1978-02-21 | 1979-09-14 | Radiotechnique Compelec | Transistor comportant une zone resistive integree dans sa region d'emetteur |
| JPS54120587A (en) * | 1978-03-10 | 1979-09-19 | Fujitsu Ltd | Transistor |
| US4506280A (en) * | 1982-05-12 | 1985-03-19 | Motorola, Inc. | Transistor with improved power dissipation capability |
| GB2175441B (en) * | 1985-05-03 | 1989-05-10 | Texas Instruments Ltd | Power bipolar transistor |
| JPH03253078A (ja) * | 1989-12-21 | 1991-11-12 | Asea Brown Boveri Ag | 遮断可能なパワー半導体素子 |
| DE4102099A1 (de) * | 1990-02-13 | 1991-08-14 | Asea Brown Boveri | Abschaltbares leistungshalbleiter-bauelement |
| US7196889B2 (en) * | 2002-11-15 | 2007-03-27 | Medtronic, Inc. | Zener triggered overvoltage protection device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2980830A (en) * | 1956-08-22 | 1961-04-18 | Shockley William | Junction transistor |
| US3180766A (en) * | 1958-12-30 | 1965-04-27 | Raytheon Co | Heavily doped base rings |
| US3225261A (en) * | 1963-11-19 | 1965-12-21 | Fairchild Camera Instr Co | High frequency power transistor |
-
1965
- 1965-03-17 US US440397A patent/US3427511A/en not_active Expired - Lifetime
-
1966
- 1966-03-08 GB GB10221/66A patent/GB1137388A/en not_active Expired
- 1966-03-10 DE DE19661564522 patent/DE1564522A1/de active Pending
- 1966-03-15 ES ES0324211A patent/ES324211A1/es not_active Expired
- 1966-03-16 BR BR177894/66A patent/BR6677894D0/pt unknown
- 1966-03-16 SE SE03476/66A patent/SE326502B/xx unknown
- 1966-03-16 NL NL666603436A patent/NL150949B/xx unknown
-
1971
- 1971-08-27 JP JP46065798A patent/JPS499269B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB1137388A (en) | 1968-12-18 |
| BR6677894D0 (pt) | 1973-05-15 |
| JPS499269B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-03-02 |
| NL6603436A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1966-09-19 |
| US3427511A (en) | 1969-02-11 |
| ES324211A1 (es) | 1967-02-01 |
| NL150949B (nl) | 1976-09-15 |
| SE326502B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1970-07-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHB | Non-payment of the publication fee (examined application) |