BR6677894D0 - Dispositivo semicondutor - Google Patents

Dispositivo semicondutor

Info

Publication number
BR6677894D0
BR6677894D0 BR177894/66A BR17789466A BR6677894D0 BR 6677894 D0 BR6677894 D0 BR 6677894D0 BR 177894/66 A BR177894/66 A BR 177894/66A BR 17789466 A BR17789466 A BR 17789466A BR 6677894 D0 BR6677894 D0 BR 6677894D0
Authority
BR
Brazil
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
BR177894/66A
Other languages
English (en)
Portuguese (pt)
Inventor
R Rosenzweig
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of BR6677894D0 publication Critical patent/BR6677894D0/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/135—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/136—Resistors
BR177894/66A 1965-03-17 1966-03-16 Dispositivo semicondutor BR6677894D0 (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44039765A 1965-03-17 1965-03-17

Publications (1)

Publication Number Publication Date
BR6677894D0 true BR6677894D0 (pt) 1973-05-15

Family

ID=23748599

Family Applications (1)

Application Number Title Priority Date Filing Date
BR177894/66A BR6677894D0 (pt) 1965-03-17 1966-03-16 Dispositivo semicondutor

Country Status (8)

Country Link
US (1) US3427511A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS499269B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BR (1) BR6677894D0 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1564522A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ES (1) ES324211A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1137388A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL150949B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE326502B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6706641A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1966-11-07 1968-11-13
US3519898A (en) * 1967-01-31 1970-07-07 Nippon Electric Co High power semiconductor device having a plurality of emitter regions
US3582726A (en) * 1969-09-03 1971-06-01 Microwave Semiconductor Corp High frequency power transistor having a plurality of discrete base areas
DE1955954A1 (de) * 1969-11-06 1971-05-13 Siemens Ag Kontaktanordnung
US3684933A (en) * 1971-06-21 1972-08-15 Itt Semiconductor device showing at least three successive zones of alternate opposite conductivity type
US3740621A (en) * 1971-08-30 1973-06-19 Rca Corp Transistor employing variable resistance ballasting means dependent on the magnitude of the emitter current
US3878550A (en) * 1972-10-27 1975-04-15 Raytheon Co Microwave power transistor
GB1558281A (en) * 1975-07-31 1979-12-19 Tokyo Shibaura Electric Co Semiconductor device and logic circuit constituted by the semiconductor device
FR2417854A1 (fr) * 1978-02-21 1979-09-14 Radiotechnique Compelec Transistor comportant une zone resistive integree dans sa region d'emetteur
JPS54120587A (en) * 1978-03-10 1979-09-19 Fujitsu Ltd Transistor
US4506280A (en) * 1982-05-12 1985-03-19 Motorola, Inc. Transistor with improved power dissipation capability
GB2175441B (en) * 1985-05-03 1989-05-10 Texas Instruments Ltd Power bipolar transistor
JPH03253078A (ja) * 1989-12-21 1991-11-12 Asea Brown Boveri Ag 遮断可能なパワー半導体素子
DE4102099A1 (de) * 1990-02-13 1991-08-14 Asea Brown Boveri Abschaltbares leistungshalbleiter-bauelement
US7196889B2 (en) * 2002-11-15 2007-03-27 Medtronic, Inc. Zener triggered overvoltage protection device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2980830A (en) * 1956-08-22 1961-04-18 Shockley William Junction transistor
US3180766A (en) * 1958-12-30 1965-04-27 Raytheon Co Heavily doped base rings
US3225261A (en) * 1963-11-19 1965-12-21 Fairchild Camera Instr Co High frequency power transistor

Also Published As

Publication number Publication date
US3427511A (en) 1969-02-11
DE1564522A1 (de) 1972-01-20
SE326502B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1970-07-27
GB1137388A (en) 1968-12-18
NL150949B (nl) 1976-09-15
ES324211A1 (es) 1967-02-01
NL6603436A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1966-09-19
JPS499269B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-03-02

Similar Documents

Publication Publication Date Title
NL157149B (nl) Halfgeleiderthyristorinrichting.
CH470085A (de) Halbleitervorrichtung
AT263084B (de) Halbleitervorrichtung
CH474851A (de) Halbleiteranordnung
FR1504868A (fr) Microcircuit semiconducteur
AT264589B (de) Halbleiteranordnung
AT276486B (de) Zusammengesetzte Halbleitervorrichtung
AT269217B (de) Halbleitervorrichtung
BR6677894D0 (pt) Dispositivo semicondutor
CH437539A (de) Halbleiteranordnung
BR6909999D0 (pt) Dispositivo semicondutor
CH438497A (de) Halbleiteranordnung
AT273227B (de) Halbleitervorrichtung
AT254987B (de) Halbleiteranordnung
AT271583B (de) Optoelektronische Halbleiteranordnung
CH469357A (de) Halbleiteranordnung
AT265432B (de) Halbleiterbauelement
CH444318A (de) Halbleiterbauelement
CH443492A (de) Halbleiteranordnung
FR1481737A (fr) Semi-conducteur
CH427043A (de) Halbleitervorrichtung
BR6908648D0 (pt) Dispositivo semicondutor composto
CH446539A (de) Halbleiterbauelement
CH399601A (de) Halbleiteranordnung
AT266218B (de) Halbleiterbauelement