DE1564380A1 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
DE1564380A1
DE1564380A1 DE19661564380 DE1564380A DE1564380A1 DE 1564380 A1 DE1564380 A1 DE 1564380A1 DE 19661564380 DE19661564380 DE 19661564380 DE 1564380 A DE1564380 A DE 1564380A DE 1564380 A1 DE1564380 A1 DE 1564380A1
Authority
DE
Germany
Prior art keywords
zone
conductive
semiconductor device
transition
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19661564380
Other languages
German (de)
English (en)
Inventor
Smith James Gilbert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1564380A1 publication Critical patent/DE1564380A1/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE19661564380 1965-01-29 1966-01-25 Halbleitervorrichtung Pending DE1564380A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4027/65A GB1103771A (en) 1965-01-29 1965-01-29 Improvements in semiconductor devices

Publications (1)

Publication Number Publication Date
DE1564380A1 true DE1564380A1 (de) 1969-08-21

Family

ID=9769353

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19661564380 Pending DE1564380A1 (de) 1965-01-29 1966-01-25 Halbleitervorrichtung

Country Status (8)

Country Link
AT (1) AT273226B (enrdf_load_stackoverflow)
BE (1) BE675697A (enrdf_load_stackoverflow)
DE (1) DE1564380A1 (enrdf_load_stackoverflow)
DK (1) DK116070B (enrdf_load_stackoverflow)
ES (1) ES322304A1 (enrdf_load_stackoverflow)
GB (1) GB1103771A (enrdf_load_stackoverflow)
NL (1) NL6600909A (enrdf_load_stackoverflow)
SE (1) SE326775B (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
ES322304A1 (es) 1966-11-16
GB1103771A (en) 1968-02-21
NL6600909A (enrdf_load_stackoverflow) 1966-08-01
SE326775B (enrdf_load_stackoverflow) 1970-08-03
DK116070B (da) 1969-12-08
BE675697A (enrdf_load_stackoverflow) 1966-07-27
AT273226B (de) 1969-08-11

Similar Documents

Publication Publication Date Title
DE1944793C3 (de) Verfahren zur Herstellung einer integrierten Halbleiteranordnung
DE2324780C3 (de) Verfahren zum Herstellen eines Halbleiterbauelements
DE2142146B2 (de) Verfahren zum gleichzeitigen Herstellen mehrerer Halbleiterbauelemente
DE1564475A1 (de) Halbleitervorrichtung
DE1764155A1 (de) Verfahren zur Herstellung eines Halbleiterbauelements und durch dieses Verfahren hergestelltes Halbleiterbauelement
DE1614300A1 (de) Feldeffekttransistor mit isolierter Torelektrode
CH495633A (de) Halbleiteranordnung
DE3329241A1 (de) Leistungstransistor
DE1221363B (de) Verfahren zum Verringern des Bahnwiderstands von Halbleiterbauelementen
DE1810322A1 (de) Halbleiterbauelement mit einer Vielzahl von streifenfoermigen zueinander parallelen Emitterbereichen und mit mehreren Kontaktierungsebenen und Verfahren zu seiner Herstellung
DE2725265A1 (de) Halbleiter-leuchtanzeigevorrichtung
DE2061689C3 (de) Tunnel-Laufzeitdiode mit Schottky-Kontakt
DE1764237C3 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE2800363C2 (de) Halbleiteranordnung und Verfahren zu deren Herstellung
DE2823629C2 (de) Planar-Halbleitervorrichtung
DE1614827C2 (de) Verfahren zum Herstellen eines Transistors
DE1564380A1 (de) Halbleitervorrichtung
DE2357640A1 (de) Halbleiteranordnung mit elektronenuebertragung
DE1439758B2 (de) Verfahren zur herstellung von transistoren
DE3003911A1 (de) Halbleiteranordnung
DE102018009021A1 (de) Asymmetrisches transientes Spannungsunterdrückungsbauelement und Verfahren zur Bildung
DE2332144B2 (de) Transistor und Verfahren zu seiner Herstellung
DE2038122C2 (de) Thyristor-Triode
DE1194501B (de) Streifenfoermige durch eine Isolierschicht von dem Halbleiterkoerper getrennte Zuleitung zu einer Elektrode eines Halbleiterbauelements, Halbleiterbauelement und Verfahren zum Herstellen
DE1940300A1 (de) Halbleiterkondensator