DE1564343B2 - Halbleiterbauelement mit negativer widerstandscharakteristik - Google Patents

Halbleiterbauelement mit negativer widerstandscharakteristik

Info

Publication number
DE1564343B2
DE1564343B2 DE1966M0070615 DEM0070615A DE1564343B2 DE 1564343 B2 DE1564343 B2 DE 1564343B2 DE 1966M0070615 DE1966M0070615 DE 1966M0070615 DE M0070615 A DEM0070615 A DE M0070615A DE 1564343 B2 DE1564343 B2 DE 1564343B2
Authority
DE
Germany
Prior art keywords
area
low energy
energy level
semiconductor component
negative resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE1966M0070615
Other languages
German (de)
English (en)
Other versions
DE1564343A1 (de
Inventor
Akio Ikeda Tanaka Masaru Toyonaka Yamashita, (Japan)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE1564343A1 publication Critical patent/DE1564343A1/de
Publication of DE1564343B2 publication Critical patent/DE1564343B2/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B7/00—Heating by electric discharge
    • H05B7/02—Details
    • H05B7/06—Electrodes
    • H05B7/08—Electrodes non-consumable
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
DE1966M0070615 1965-08-19 1966-08-17 Halbleiterbauelement mit negativer widerstandscharakteristik Pending DE1564343B2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5114265 1965-08-19
JP5114165 1965-08-19
JP5289765 1965-08-27

Publications (2)

Publication Number Publication Date
DE1564343A1 DE1564343A1 (de) 1969-07-24
DE1564343B2 true DE1564343B2 (de) 1971-08-15

Family

ID=27294221

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1966M0070615 Pending DE1564343B2 (de) 1965-08-19 1966-08-17 Halbleiterbauelement mit negativer widerstandscharakteristik

Country Status (4)

Country Link
US (1) US3461356A (enExample)
DE (1) DE1564343B2 (enExample)
GB (1) GB1168255A (enExample)
NL (1) NL151567B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2235465A1 (de) * 1971-09-30 1973-04-19 Ibm Halbleiterschalt- oder speichervorrichtung

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3537021A (en) * 1968-09-09 1970-10-27 Bell Telephone Labor Inc Stable frequency-independent two-valley semiconductor device
JPS4919957B1 (enExample) * 1970-04-24 1974-05-21
US3662232A (en) * 1970-12-10 1972-05-09 Fmc Corp Semiconductor devices having low minority carrier lifetime and process for producing same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2908871A (en) * 1954-10-26 1959-10-13 Bell Telephone Labor Inc Negative resistance semiconductive apparatus
US3008089A (en) * 1958-02-20 1961-11-07 Bell Telephone Labor Inc Semiconductive device comprising p-i-n conductivity layers
GB1058753A (en) * 1962-11-02 1967-02-15 Ass Elect Ind Improvements relating to solid state devices
SE219804C1 (enExample) * 1963-07-01 1956-04-02
US3270258A (en) * 1963-07-05 1966-08-30 Int Rectifier Corp Field effect transistor
US3370209A (en) * 1964-08-31 1968-02-20 Gen Electric Power bulk breakdown semiconductor devices
US3374176A (en) * 1965-01-04 1968-03-19 Gen Electric Process for making n-type zinc cadmium sulfide electroluminescent material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2235465A1 (de) * 1971-09-30 1973-04-19 Ibm Halbleiterschalt- oder speichervorrichtung

Also Published As

Publication number Publication date
NL6611609A (enExample) 1967-02-20
DE1564343A1 (de) 1969-07-24
US3461356A (en) 1969-08-12
GB1168255A (en) 1969-10-22
NL151567B (nl) 1976-11-15

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Legal Events

Date Code Title Description
SH Request for examination between 03.10.1968 and 22.04.1971