NL151567B - Halfgeleiderinrichting met negatieve weerstandskarakteristiek. - Google Patents
Halfgeleiderinrichting met negatieve weerstandskarakteristiek.Info
- Publication number
- NL151567B NL151567B NL666611609A NL6611609A NL151567B NL 151567 B NL151567 B NL 151567B NL 666611609 A NL666611609 A NL 666611609A NL 6611609 A NL6611609 A NL 6611609A NL 151567 B NL151567 B NL 151567B
- Authority
- NL
- Netherlands
- Prior art keywords
- semi
- resistance characteristics
- negative resistance
- conductor device
- conductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B7/00—Heating by electric discharge
- H05B7/02—Details
- H05B7/06—Electrodes
- H05B7/08—Electrodes non-consumable
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5114165 | 1965-08-19 | ||
JP5114265 | 1965-08-19 | ||
JP5289765 | 1965-08-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL6611609A NL6611609A (nl) | 1967-02-20 |
NL151567B true NL151567B (nl) | 1976-11-15 |
Family
ID=27294221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL666611609A NL151567B (nl) | 1965-08-19 | 1966-08-18 | Halfgeleiderinrichting met negatieve weerstandskarakteristiek. |
Country Status (4)
Country | Link |
---|---|
US (1) | US3461356A (nl) |
DE (1) | DE1564343B2 (nl) |
GB (1) | GB1168255A (nl) |
NL (1) | NL151567B (nl) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3537021A (en) * | 1968-09-09 | 1970-10-27 | Bell Telephone Labor Inc | Stable frequency-independent two-valley semiconductor device |
JPS4919957B1 (nl) * | 1970-04-24 | 1974-05-21 | ||
US3662232A (en) * | 1970-12-10 | 1972-05-09 | Fmc Corp | Semiconductor devices having low minority carrier lifetime and process for producing same |
CH539360A (de) * | 1971-09-30 | 1973-07-15 | Ibm | Halbleiterschalt- oder Speichervorrichtung |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2908871A (en) * | 1954-10-26 | 1959-10-13 | Bell Telephone Labor Inc | Negative resistance semiconductive apparatus |
US3008089A (en) * | 1958-02-20 | 1961-11-07 | Bell Telephone Labor Inc | Semiconductive device comprising p-i-n conductivity layers |
GB1058753A (en) * | 1962-11-02 | 1967-02-15 | Ass Elect Ind | Improvements relating to solid state devices |
CH440478A (de) * | 1963-07-01 | 1967-07-31 | Asea Ab | Verfahren zum Herabsetzen der Durchlasspannung in einem gleichrichtenden Halbleiterkörper und Anordnung zur Ausführung des Verfahrens |
US3270258A (en) * | 1963-07-05 | 1966-08-30 | Int Rectifier Corp | Field effect transistor |
US3370209A (en) * | 1964-08-31 | 1968-02-20 | Gen Electric | Power bulk breakdown semiconductor devices |
US3374176A (en) * | 1965-01-04 | 1968-03-19 | Gen Electric | Process for making n-type zinc cadmium sulfide electroluminescent material |
-
1966
- 1966-08-01 US US569300A patent/US3461356A/en not_active Expired - Lifetime
- 1966-08-17 DE DE1966M0070615 patent/DE1564343B2/de active Pending
- 1966-08-17 GB GB36712/66A patent/GB1168255A/en not_active Expired
- 1966-08-18 NL NL666611609A patent/NL151567B/nl unknown
Also Published As
Publication number | Publication date |
---|---|
GB1168255A (en) | 1969-10-22 |
DE1564343A1 (de) | 1969-07-24 |
DE1564343B2 (de) | 1971-08-15 |
US3461356A (en) | 1969-08-12 |
NL6611609A (nl) | 1967-02-20 |
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