NL151567B - Halfgeleiderinrichting met negatieve weerstandskarakteristiek. - Google Patents

Halfgeleiderinrichting met negatieve weerstandskarakteristiek.

Info

Publication number
NL151567B
NL151567B NL666611609A NL6611609A NL151567B NL 151567 B NL151567 B NL 151567B NL 666611609 A NL666611609 A NL 666611609A NL 6611609 A NL6611609 A NL 6611609A NL 151567 B NL151567 B NL 151567B
Authority
NL
Netherlands
Prior art keywords
semi
resistance characteristics
negative resistance
conductor device
conductor
Prior art date
Application number
NL666611609A
Other languages
English (en)
Other versions
NL6611609A (nl
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Publication of NL6611609A publication Critical patent/NL6611609A/xx
Publication of NL151567B publication Critical patent/NL151567B/nl

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B7/00Heating by electric discharge
    • H05B7/02Details
    • H05B7/06Electrodes
    • H05B7/08Electrodes non-consumable
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/868PIN diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Electrodes Of Semiconductors (AREA)
NL666611609A 1965-08-19 1966-08-18 Halfgeleiderinrichting met negatieve weerstandskarakteristiek. NL151567B (nl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5114165 1965-08-19
JP5114265 1965-08-19
JP5289765 1965-08-27

Publications (2)

Publication Number Publication Date
NL6611609A NL6611609A (nl) 1967-02-20
NL151567B true NL151567B (nl) 1976-11-15

Family

ID=27294221

Family Applications (1)

Application Number Title Priority Date Filing Date
NL666611609A NL151567B (nl) 1965-08-19 1966-08-18 Halfgeleiderinrichting met negatieve weerstandskarakteristiek.

Country Status (4)

Country Link
US (1) US3461356A (nl)
DE (1) DE1564343B2 (nl)
GB (1) GB1168255A (nl)
NL (1) NL151567B (nl)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3537021A (en) * 1968-09-09 1970-10-27 Bell Telephone Labor Inc Stable frequency-independent two-valley semiconductor device
JPS4919957B1 (nl) * 1970-04-24 1974-05-21
US3662232A (en) * 1970-12-10 1972-05-09 Fmc Corp Semiconductor devices having low minority carrier lifetime and process for producing same
CH539360A (de) * 1971-09-30 1973-07-15 Ibm Halbleiterschalt- oder Speichervorrichtung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2908871A (en) * 1954-10-26 1959-10-13 Bell Telephone Labor Inc Negative resistance semiconductive apparatus
US3008089A (en) * 1958-02-20 1961-11-07 Bell Telephone Labor Inc Semiconductive device comprising p-i-n conductivity layers
GB1058753A (en) * 1962-11-02 1967-02-15 Ass Elect Ind Improvements relating to solid state devices
CH440478A (de) * 1963-07-01 1967-07-31 Asea Ab Verfahren zum Herabsetzen der Durchlasspannung in einem gleichrichtenden Halbleiterkörper und Anordnung zur Ausführung des Verfahrens
US3270258A (en) * 1963-07-05 1966-08-30 Int Rectifier Corp Field effect transistor
US3370209A (en) * 1964-08-31 1968-02-20 Gen Electric Power bulk breakdown semiconductor devices
US3374176A (en) * 1965-01-04 1968-03-19 Gen Electric Process for making n-type zinc cadmium sulfide electroluminescent material

Also Published As

Publication number Publication date
GB1168255A (en) 1969-10-22
DE1564343A1 (de) 1969-07-24
DE1564343B2 (de) 1971-08-15
US3461356A (en) 1969-08-12
NL6611609A (nl) 1967-02-20

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