DE1564222A1 - MOS-Transistor mit zwei Steuerelektroden - Google Patents

MOS-Transistor mit zwei Steuerelektroden

Info

Publication number
DE1564222A1
DE1564222A1 DE19661564222 DE1564222A DE1564222A1 DE 1564222 A1 DE1564222 A1 DE 1564222A1 DE 19661564222 DE19661564222 DE 19661564222 DE 1564222 A DE1564222 A DE 1564222A DE 1564222 A1 DE1564222 A1 DE 1564222A1
Authority
DE
Germany
Prior art keywords
transistor
mos transistor
transistors
control
control electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19661564222
Other languages
German (de)
English (en)
Inventor
Jorgensen Soren Anton Wilfred
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JORGENSEN SOREN ANTON WILFRED
Original Assignee
JORGENSEN SOREN ANTON WILFRED
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JORGENSEN SOREN ANTON WILFRED filed Critical JORGENSEN SOREN ANTON WILFRED
Publication of DE1564222A1 publication Critical patent/DE1564222A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Static Random-Access Memory (AREA)
DE19661564222 1966-01-04 1966-12-29 MOS-Transistor mit zwei Steuerelektroden Pending DE1564222A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DK2466AA DK134919B (da) 1966-01-04 1966-01-04 Matrix-kobling.

Publications (1)

Publication Number Publication Date
DE1564222A1 true DE1564222A1 (de) 1970-01-22

Family

ID=8088879

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19661564222 Pending DE1564222A1 (de) 1966-01-04 1966-12-29 MOS-Transistor mit zwei Steuerelektroden

Country Status (3)

Country Link
DE (1) DE1564222A1 (enrdf_load_stackoverflow)
DK (1) DK134919B (enrdf_load_stackoverflow)
NO (1) NO120840B (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2104379A1 (de) * 1971-01-30 1972-08-17 Beneking H Schaltung zur Realisierung einer steuerbaren Kapazität
DE3123242A1 (de) * 1981-06-11 1983-02-03 Siemens AG, 1000 Berlin und 8000 München Integrierbare korrelatorschaltung fuer ein bildverarbeitendes system
EP0137257A3 (en) * 1983-09-08 1986-02-19 International Business Machines Corporation Resistive gate field effect transistor logic family
WO2004006338A1 (en) * 2002-07-02 2004-01-15 Sandisk Corporation Technique for fabricating logic elements using multiple gate layers

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2104379A1 (de) * 1971-01-30 1972-08-17 Beneking H Schaltung zur Realisierung einer steuerbaren Kapazität
DE3123242A1 (de) * 1981-06-11 1983-02-03 Siemens AG, 1000 Berlin und 8000 München Integrierbare korrelatorschaltung fuer ein bildverarbeitendes system
EP0137257A3 (en) * 1983-09-08 1986-02-19 International Business Machines Corporation Resistive gate field effect transistor logic family
WO2004006338A1 (en) * 2002-07-02 2004-01-15 Sandisk Corporation Technique for fabricating logic elements using multiple gate layers
US7064034B2 (en) 2002-07-02 2006-06-20 Sandisk Corporation Technique for fabricating logic elements using multiple gate layers
US7265423B2 (en) 2002-07-02 2007-09-04 Sandisk Corporation Technique for fabricating logic elements using multiple gate layers
US7425744B2 (en) 2002-07-02 2008-09-16 Sandisk Corporation Fabricating logic and memory elements using multiple gate layers

Also Published As

Publication number Publication date
DK134919B (da) 1977-02-07
NO120840B (enrdf_load_stackoverflow) 1970-12-14
DK134919C (enrdf_load_stackoverflow) 1977-06-27

Similar Documents

Publication Publication Date Title
DE2414917C2 (de) Leseverstärker
DE69032799T2 (de) Programmierbare logische Vorrichtung und zugehörige Speicherschaltung
DE1817510B2 (de) Monolithischer halbleiterspeicher mit speicherzellen aus transistoren
DE3906895A1 (de) Halbleiterspeichereinrichtung und diese verwendender datenpfad
DE2706807C2 (de) Einrichtung und Verfahren zum Verarbeiten von Information in Form digitaler Signale
DE2217537A1 (de) Transistor-Transistor-Logikschaltung
DE2643020A1 (de) Schmitt-trigger
DE2113306B2 (de) Integrierter Schaltungsblock
DE2655999A1 (de) Speicherzelle mit transistoren, die mit verschiedenen schwellenwertspannungen arbeiten
DE2142721A1 (de) Integrierte bistabile Speicherzelle
DE1945613B2 (de) Integrierte flip flop schaltung
DE2657293C3 (de) Elektrische Schaltungsanordnung in Transistor-Transistor-Logikschaltung (TTL)
DE1564222A1 (de) MOS-Transistor mit zwei Steuerelektroden
DE1774492A1 (de) Datenuebertragungssystem
DE2704839C3 (de) Übertragungsnetzwerk für Schaltungen mit Josephson-Elementen
DD144325A5 (de) Magnetblasenspeicher
DE3124285C2 (enrdf_load_stackoverflow)
DE2734509A1 (de) Integrierte halbleiterschaltung
DE2812784C2 (enrdf_load_stackoverflow)
DE1764241A1 (de) Monolithische elektrische Schaltung
DE1614250A1 (de) Integrierte Schaltung mit Gruppen von sich kreuzenden Verbindungen
DE2450891C3 (de) Sprechwegschalter
DE2362134A1 (de) Halbleiterbauelement
DE2457551A1 (de) Josephson-schaltkreis mit symmetrisierter uebertragungsleitung
DE2855342A1 (de) Speicherschaltung