DE1544211A1 - Verfahren zum Herstellen von Halbleitervorrichtungen - Google Patents
Verfahren zum Herstellen von HalbleitervorrichtungenInfo
- Publication number
- DE1544211A1 DE1544211A1 DE19661544211 DE1544211A DE1544211A1 DE 1544211 A1 DE1544211 A1 DE 1544211A1 DE 19661544211 DE19661544211 DE 19661544211 DE 1544211 A DE1544211 A DE 1544211A DE 1544211 A1 DE1544211 A1 DE 1544211A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- ion beam
- covering
- substrate
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 150000002500 ions Chemical class 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 33
- 238000010884 ion-beam technique Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 17
- 238000005468 ion implantation Methods 0.000 claims description 16
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 4
- 230000000873 masking effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000008901 benefit Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000002513 implantation Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010849 ion bombardment Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 206010037742 Rabies Diseases 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/083—Ion implantation, general
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US466218A US3388009A (en) | 1965-06-23 | 1965-06-23 | Method of forming a p-n junction by an ionic beam |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1544211A1 true DE1544211A1 (de) | 1970-10-22 |
Family
ID=23850952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19661544211 Pending DE1544211A1 (de) | 1965-06-23 | 1966-06-23 | Verfahren zum Herstellen von Halbleitervorrichtungen |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3388009A (sv) |
| DE (1) | DE1544211A1 (sv) |
| GB (1) | GB1124202A (sv) |
| NL (1) | NL6608726A (sv) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3507709A (en) * | 1967-09-15 | 1970-04-21 | Hughes Aircraft Co | Method of irradiating dielectriccoated semiconductor bodies with low energy electrons |
| US3533158A (en) * | 1967-10-30 | 1970-10-13 | Hughes Aircraft Co | Method of utilizing an ion beam to form custom circuits |
| US3520741A (en) * | 1967-12-18 | 1970-07-14 | Hughes Aircraft Co | Method of simultaneous epitaxial growth and ion implantation |
| US3514844A (en) * | 1967-12-26 | 1970-06-02 | Hughes Aircraft Co | Method of making field-effect device with insulated gate |
| US3653988A (en) * | 1968-02-05 | 1972-04-04 | Bell Telephone Labor Inc | Method of forming monolithic semiconductor integrated circuit devices |
| USRE28704E (en) * | 1968-03-11 | 1976-02-03 | U.S. Philips Corporation | Semiconductor devices |
| GB1261723A (en) * | 1968-03-11 | 1972-01-26 | Associated Semiconductor Mft | Improvements in and relating to semiconductor devices |
| US3770516A (en) * | 1968-08-06 | 1973-11-06 | Ibm | Monolithic integrated circuits |
| US3655457A (en) * | 1968-08-06 | 1972-04-11 | Ibm | Method of making or modifying a pn-junction by ion implantation |
| JPS4915377B1 (sv) * | 1968-10-04 | 1974-04-15 | ||
| US3660735A (en) * | 1969-09-10 | 1972-05-02 | Sprague Electric Co | Complementary metal insulator silicon transistor pairs |
| US3620851A (en) * | 1969-12-04 | 1971-11-16 | William J King | Method for making a buried layer semiconductor device |
| GB1332931A (en) * | 1970-01-15 | 1973-10-10 | Mullard Ltd | Methods of manufacturing a semiconductor device |
| US3790411A (en) * | 1972-03-08 | 1974-02-05 | Bell Telephone Labor Inc | Method for doping semiconductor bodies by neutral particle implantation |
| JPS4924361A (sv) * | 1972-06-27 | 1974-03-04 | ||
| US4021675A (en) * | 1973-02-20 | 1977-05-03 | Hughes Aircraft Company | System for controlling ion implantation dosage in electronic materials |
| US3945856A (en) * | 1974-07-15 | 1976-03-23 | Ibm Corporation | Method of ion implantation through an electrically insulative material |
| FR2298880A1 (fr) * | 1975-01-22 | 1976-08-20 | Commissariat Energie Atomique | Procede et dispositif d'implantation ionique |
| US4891683A (en) * | 1977-05-02 | 1990-01-02 | Advanced Micro Devices, Inc. | Integrated SCR current sourcing sinking device |
| US4177093A (en) * | 1978-06-27 | 1979-12-04 | Exxon Research & Engineering Co. | Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide |
| JPS62142318A (ja) * | 1985-12-17 | 1987-06-25 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
| US2786880A (en) * | 1951-06-16 | 1957-03-26 | Bell Telephone Labor Inc | Signal translating device |
| DE1287009C2 (de) * | 1957-08-07 | 1975-01-09 | Western Electric Co. Inc., New York, N.Y. (V.St.A.) | Verfahren zur herstellung von halbleiterkoerpern |
| BE589705A (sv) * | 1959-04-15 | |||
| NL269092A (sv) * | 1960-09-09 | 1900-01-01 | ||
| US3255005A (en) * | 1962-06-29 | 1966-06-07 | Tung Sol Electric Inc | Masking process for semiconductor elements |
-
1965
- 1965-06-23 US US466218A patent/US3388009A/en not_active Expired - Lifetime
-
1966
- 1966-06-21 GB GB27787/66A patent/GB1124202A/en not_active Expired
- 1966-06-23 NL NL6608726A patent/NL6608726A/xx unknown
- 1966-06-23 DE DE19661544211 patent/DE1544211A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB1124202A (en) | 1968-08-21 |
| US3388009B1 (sv) | 1986-07-29 |
| US3388009A (en) | 1968-06-11 |
| NL6608726A (sv) | 1966-12-27 |
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