DE1519868B2 - Verfahren zum herstellen einer faserstruktur in einem koerper aus einer halbleitenden verbindung - Google Patents
Verfahren zum herstellen einer faserstruktur in einem koerper aus einer halbleitenden verbindungInfo
- Publication number
- DE1519868B2 DE1519868B2 DE19651519868 DE1519868A DE1519868B2 DE 1519868 B2 DE1519868 B2 DE 1519868B2 DE 19651519868 DE19651519868 DE 19651519868 DE 1519868 A DE1519868 A DE 1519868A DE 1519868 B2 DE1519868 B2 DE 1519868B2
- Authority
- DE
- Germany
- Prior art keywords
- inclusions
- phase
- semiconductor
- crystal
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000835 fiber Substances 0.000 title claims description 18
- 238000000034 method Methods 0.000 title claims description 8
- 239000013078 crystal Substances 0.000 claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 42
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 230000005496 eutectics Effects 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 description 13
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 9
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 6
- 230000005291 magnetic effect Effects 0.000 description 6
- 229910000673 Indium arsenide Inorganic materials 0.000 description 5
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 5
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 5
- 238000007711 solidification Methods 0.000 description 5
- 230000008023 solidification Effects 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910005542 GaSb Inorganic materials 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910019963 CrSb Inorganic materials 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- ZTNAMCOKKZMLMJ-UHFFFAOYSA-N [Cr].[Cr].[As] Chemical compound [Cr].[Cr].[As] ZTNAMCOKKZMLMJ-UHFFFAOYSA-N 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- -1 B. antimony Chemical class 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000483002 Euproctis similis Species 0.000 description 1
- 240000008042 Zea mays Species 0.000 description 1
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 description 1
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- SBLMIPWAMVAONB-UHFFFAOYSA-N antimony;iron(3+) Chemical compound [Fe+3].[Sb] SBLMIPWAMVAONB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002051 biphasic effect Effects 0.000 description 1
- QWYVKZJDGBMHFE-UHFFFAOYSA-N cobalt gallium Chemical compound [Co].[Ga] QWYVKZJDGBMHFE-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 235000005822 corn Nutrition 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000374 eutectic mixture Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000036512 infertility Effects 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- FDKAYGUKROYPRO-UHFFFAOYSA-N iron arsenide Chemical compound [Fe].[As]=[Fe] FDKAYGUKROYPRO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000002601 radiography Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B21/00—Unidirectional solidification of eutectic materials
- C30B21/04—Unidirectional solidification of eutectic materials by zone-melting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/115—Orientation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0096033 | 1965-03-18 | ||
| DES0096034 | 1965-03-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1519868A1 DE1519868A1 (de) | 1970-04-16 |
| DE1519868B2 true DE1519868B2 (de) | 1971-07-29 |
Family
ID=25998003
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19651519868 Pending DE1519868B2 (de) | 1965-03-18 | 1965-03-18 | Verfahren zum herstellen einer faserstruktur in einem koerper aus einer halbleitenden verbindung |
| DE19651519869 Pending DE1519869B1 (de) | 1965-03-18 | 1965-03-18 | Verfahren zum Herstellen einer Faserstruktur in einem Koerper aus einer halbleitenden Verbindung |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19651519869 Pending DE1519869B1 (de) | 1965-03-18 | 1965-03-18 | Verfahren zum Herstellen einer Faserstruktur in einem Koerper aus einer halbleitenden Verbindung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3442823A (enExample) |
| AT (1) | AT258421B (enExample) |
| BE (1) | BE675189A (enExample) |
| CH (1) | CH453310A (enExample) |
| DE (2) | DE1519868B2 (enExample) |
| GB (1) | GB1106314A (enExample) |
| NL (1) | NL6602216A (enExample) |
| SE (1) | SE315267B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3651385A (en) * | 1968-09-18 | 1972-03-21 | Sony Corp | Semiconductor device including a polycrystalline diode |
| US3624467A (en) * | 1969-02-17 | 1971-11-30 | Texas Instruments Inc | Monolithic integrated-circuit structure and method of fabrication |
| BE760094A (fr) * | 1969-12-09 | 1971-06-09 | Siemens Ag | Dispositif detecteur de rayonnement infra-rouge et son procede de fabrication |
| JPS5134268B2 (enExample) * | 1972-07-13 | 1976-09-25 | ||
| US3953876A (en) * | 1973-06-07 | 1976-04-27 | Dow Corning Corporation | Silicon solar cell array |
| FR2443743A1 (fr) * | 1978-12-04 | 1980-07-04 | Colburn William | Dispositif electronique contenant une matiere composite et son procede de realisation |
| DE3333960A1 (de) * | 1983-09-20 | 1985-04-04 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur herstellung von versetzungsfreien einkristallstaeben aus silicium |
| US4532000A (en) * | 1983-09-28 | 1985-07-30 | Hughes Aircraft Company | Fabrication of single crystal fibers from congruently melting polycrystalline fibers |
| US4984037A (en) * | 1986-12-11 | 1991-01-08 | Gte Laboratories Incorporated | Semiconductor device with conductive rectifying rods |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE399896C (de) * | 1924-07-31 | Frederick Shand Goucher Dr | Verfahren zur Herstellung von Metalldraehten oder -faeden, insbesondere aus schwerschmelzbaren Metallen | |
| NL168491B (enExample) * | 1951-11-16 | Roussel-Uclaf, Societe Anonyme Te Parijs. | ||
| US3259582A (en) * | 1959-11-30 | 1966-07-05 | Siemens Ag | Mix-crystal semiconductor devices |
-
1965
- 1965-03-18 DE DE19651519868 patent/DE1519868B2/de active Pending
- 1965-03-18 DE DE19651519869 patent/DE1519869B1/de active Pending
- 1965-10-22 US US501918A patent/US3442823A/en not_active Expired - Lifetime
-
1966
- 1966-01-17 BE BE675189D patent/BE675189A/xx unknown
- 1966-02-07 AT AT107266A patent/AT258421B/de active
- 1966-02-16 CH CH226366A patent/CH453310A/de unknown
- 1966-02-21 NL NL6602216A patent/NL6602216A/xx unknown
- 1966-03-09 SE SE3119/66A patent/SE315267B/xx unknown
- 1966-03-18 GB GB12181/66A patent/GB1106314A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| BE675189A (enExample) | 1966-05-16 |
| DE1519869B1 (de) | 1970-01-15 |
| DE1519868A1 (de) | 1970-04-16 |
| NL6602216A (enExample) | 1966-09-19 |
| SE315267B (enExample) | 1969-09-29 |
| AT258421B (de) | 1967-11-27 |
| US3442823A (en) | 1969-05-06 |
| CH453310A (de) | 1968-06-14 |
| GB1106314A (en) | 1968-03-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2609907C2 (de) | Verfahren zum epitaktischen Abscheiden von einkristallinem Galliumnitrid auf einem Substrat | |
| DE69012731T2 (de) | Oxydsupraleiter und verfahren zur herstellung. | |
| DE1291320B (de) | Verfahren zum Ziehen dendritischer Kristalle | |
| DE2616700C2 (de) | Verfahren zum Ausbilden einer dünnen Schicht aus einem Halbleitermaterial der Gruppen III-V durch epitaxiales Aufwachsen, sowie Vorrichtung zur Durchführung des Verfahrens | |
| DE1519868B2 (de) | Verfahren zum herstellen einer faserstruktur in einem koerper aus einer halbleitenden verbindung | |
| EP1739210A1 (de) | Verfahren zur Herstellung von dotierten Halbleiter-Einkristallen, und III-V-Halbleiter-Einkristall | |
| DE2062041B2 (enExample) | ||
| DE69209337T2 (de) | Verfahren zur Herstellung eines supraleitenden Materials | |
| DE2726744C3 (de) | Einkristallines Substrat aus Calcium-Gallium-Granat sowie mit diesem hergestellte magnetische Blasendomänenanordnung | |
| DE2346399A1 (de) | Verfahren zum zuechten von epitaxialschichten | |
| DE3111657A1 (de) | Verfahren zur herstellung von magnetfilmsubstrat-zusammensetzungen | |
| DE1519868C (de) | Verfahren zum Herstellen einer Faser struktur in einem Korper aus einer halbleitenden Verbindung | |
| DE60017324T2 (de) | Verfahren zur Kristallzüchtung | |
| DE1019013B (de) | Verfahren zur Bildung einer Inversionsschicht in Flaechenhalbleitern nach dem Rueckschmelz-Verfahren | |
| DE68926316T2 (de) | Verfahren zur Herstellung eines Supraleiters aus supraleitenden Keramiken | |
| DE1246683B (de) | Verfahren zur Herstellung eines langgestreckten, dendritischen Halbleiterkoerpers | |
| DE2632614A1 (de) | Vorrichtung zum ziehen eines einkristallinen koerpers aus einem schmelzfilm | |
| DE69007424T2 (de) | Verfahren zur Herstellung eines oxidischen Supraleiters. | |
| DE69016392T2 (de) | Verfahren und Vorrichtung zur Züchtung von Kristallen. | |
| DE2508651C3 (de) | Verfahren zur Herstellung eines ununterbrochenen kristallinen Bandes | |
| DE2542603A1 (de) | Lichtemittierendes halbleiterbauelement | |
| DE1419738A1 (de) | Verfahren zum Zuechten von duennen,flachen dendritischen Einkristallen | |
| DE3841241A1 (de) | Metallfaser und verfahren zur herstellung einer metallfaser | |
| DE3830170C2 (enExample) | ||
| DE1544224B2 (de) | Siliziumdiode und verfahren zu ihrer herstellung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| E771 | Valid patent as to the heymanns-index 1977, willingness to grant licences |