DE1514242A1 - Optoelektronisches Schaltelement - Google Patents
Optoelektronisches SchaltelementInfo
- Publication number
- DE1514242A1 DE1514242A1 DE19651514242 DE1514242A DE1514242A1 DE 1514242 A1 DE1514242 A1 DE 1514242A1 DE 19651514242 DE19651514242 DE 19651514242 DE 1514242 A DE1514242 A DE 1514242A DE 1514242 A1 DE1514242 A1 DE 1514242A1
- Authority
- DE
- Germany
- Prior art keywords
- radiation
- semiconductor body
- radiation source
- switching element
- photosensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005693 optoelectronics Effects 0.000 title claims description 50
- 230000005855 radiation Effects 0.000 claims description 355
- 239000004065 semiconductor Substances 0.000 claims description 217
- 230000007704 transition Effects 0.000 claims description 62
- 238000005215 recombination Methods 0.000 claims description 54
- 239000000463 material Substances 0.000 claims description 40
- 230000006798 recombination Effects 0.000 claims description 38
- 229910005540 GaP Inorganic materials 0.000 claims description 34
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 33
- 239000000969 carrier Substances 0.000 claims description 23
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 21
- 229910052725 zinc Inorganic materials 0.000 claims description 21
- 239000011701 zinc Substances 0.000 claims description 21
- 239000002800 charge carrier Substances 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 238000002347 injection Methods 0.000 claims description 16
- 239000007924 injection Substances 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 13
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 6
- 230000001419 dependent effect Effects 0.000 claims description 4
- 230000035699 permeability Effects 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 238000004904 shortening Methods 0.000 claims description 3
- 231100000289 photo-effect Toxicity 0.000 description 12
- 230000000694 effects Effects 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid group Chemical group C(CCCCCCC\C=C/CCCCCCCC)(=O)O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 230000010512 thermal transition Effects 0.000 description 2
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 description 1
- 101100243934 Drosophila melanogaster phtf gene Proteins 0.000 description 1
- 206010073306 Exposure to radiation Diseases 0.000 description 1
- 101100243929 Mus musculus Phtf1 gene Proteins 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 241000396377 Tranes Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- CDZGJSREWGPJMG-UHFFFAOYSA-N copper gallium Chemical compound [Cu].[Ga] CDZGJSREWGPJMG-UHFFFAOYSA-N 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000009428 plumbing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6401188A NL6401188A (enrdf_load_stackoverflow) | 1964-02-12 | 1964-02-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1514242A1 true DE1514242A1 (de) | 1969-06-19 |
Family
ID=19789261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19651514242 Pending DE1514242A1 (de) | 1964-02-12 | 1965-02-09 | Optoelektronisches Schaltelement |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE659705A (enrdf_load_stackoverflow) |
| DE (1) | DE1514242A1 (enrdf_load_stackoverflow) |
| ES (1) | ES309186A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1096735A (enrdf_load_stackoverflow) |
| NL (1) | NL6401188A (enrdf_load_stackoverflow) |
-
1964
- 1964-02-12 NL NL6401188A patent/NL6401188A/xx unknown
-
1965
- 1965-02-09 GB GB5536/65A patent/GB1096735A/en not_active Expired
- 1965-02-09 DE DE19651514242 patent/DE1514242A1/de active Pending
- 1965-02-10 ES ES0309186A patent/ES309186A1/es not_active Expired
- 1965-02-12 BE BE659705A patent/BE659705A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1096735A (en) | 1967-12-29 |
| BE659705A (enrdf_load_stackoverflow) | 1965-08-12 |
| NL6401188A (enrdf_load_stackoverflow) | 1965-08-13 |
| ES309186A1 (es) | 1965-05-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE1264513C2 (de) | Bezugspotentialfreier gleichstromdifferenzverstaerker | |
| DE2326751C3 (de) | Halbleiterbauelement zum Speichern und Verfahren zum Betrieb | |
| DE2400711A1 (de) | Durch licht steuerbare halbleiterschaltung, insbesondere thyristorschaltung | |
| DE69321822T2 (de) | Photodiodenstruktur | |
| DE2213765C3 (de) | Bildaufnahmevorrichtung mit einem Feldeffekttransistor als Sensor | |
| DE891580C (de) | Lichtelektrische Halbleitereinrichtungen | |
| DE3011484A1 (de) | Optisch steuerbarer, mit statischer induktion arbeitender thyristor | |
| DE3302725C2 (enrdf_load_stackoverflow) | ||
| DE2836854A1 (de) | System und verfahren zum erzeugen und auslesen von strahlungsbildern unter einsatz einer mehrschichtigen vorrichtung mit einer photoleitfaehigen isolierschicht | |
| DE1514269A1 (de) | Opto-elektronischer Transistor | |
| DE1764565A1 (de) | Photoempfindliches Halbleiterbauelement | |
| DE69911012T2 (de) | Flacher elektronenemitter | |
| DE102004022948A1 (de) | Avalanche-Strahlungsdetektor | |
| DE2427256A1 (de) | Halbleiteranordnung | |
| DE1489319A1 (de) | Halbleiterlichtquelle | |
| DE1137147B (de) | Einrichtung zur Wiedergabe von Bildern mit einer Elektrolumineszenzschicht und einer Fotoleiterschicht | |
| DE1639265A1 (de) | Halbleiterbauelement zur Transformation von Gleich- und Wechselspannungen | |
| DE1489942B1 (de) | Schaltungsanordnung zur Frequenzmodulation eines optischen Senders (Laser) mit einer Halbleiterdiode als stimulierbarem Medium | |
| DE2345686A1 (de) | Bildwiedergabe- und/oder -umwandlungsvorrichtung | |
| DE1514242A1 (de) | Optoelektronisches Schaltelement | |
| DE1514830A1 (de) | Optoelektronische Schaltung | |
| WO1992017907A1 (de) | Thyristor mit einstellbarer kippspannung und verfahren zu seiner herstellung | |
| DE1210490B (de) | Steuerbares Halbleiterbauelement mit einer pnpn- oder npnp-Zonenfolge und Verfahren zum Herstellen | |
| DE3028134C2 (de) | Lichtgesteuerter Halbleitergleichrichter | |
| DE1439687C3 (de) | Festkörperbildwandler |