DE1514182B1 - Verfahren zum Herstellen einer Dreischicht-Halbleiterscheibe - Google Patents

Verfahren zum Herstellen einer Dreischicht-Halbleiterscheibe

Info

Publication number
DE1514182B1
DE1514182B1 DE19651514182 DE1514182A DE1514182B1 DE 1514182 B1 DE1514182 B1 DE 1514182B1 DE 19651514182 DE19651514182 DE 19651514182 DE 1514182 A DE1514182 A DE 1514182A DE 1514182 B1 DE1514182 B1 DE 1514182B1
Authority
DE
Germany
Prior art keywords
semiconductor wafer
area
raised
manufacturing
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19651514182
Other languages
German (de)
English (en)
Inventor
Douglas Frederick Ridley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZF International UK Ltd
Original Assignee
Lucas Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucas Industries Ltd filed Critical Lucas Industries Ltd
Publication of DE1514182B1 publication Critical patent/DE1514182B1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
DE19651514182 1965-01-08 1965-12-18 Verfahren zum Herstellen einer Dreischicht-Halbleiterscheibe Pending DE1514182B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB884/65A GB1124762A (en) 1965-01-08 1965-01-08 Semi-conductor devices

Publications (1)

Publication Number Publication Date
DE1514182B1 true DE1514182B1 (de) 1970-11-19

Family

ID=9712186

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19651514182 Pending DE1514182B1 (de) 1965-01-08 1965-12-18 Verfahren zum Herstellen einer Dreischicht-Halbleiterscheibe

Country Status (5)

Country Link
US (1) US3398030A (OSRAM)
DE (1) DE1514182B1 (OSRAM)
FR (2) FR1462034A (OSRAM)
GB (1) GB1124762A (OSRAM)
NL (1) NL6517100A (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10260872B4 (de) 2002-12-23 2013-09-26 Beiersdorf Ag Verwendung von gelbildendem Polymer, Wasser, Alkohol und Meeresalgenextrakt zur Einstellung von Elastizität und Haftvermögen selbstklebender kosmetischer Polymermatrices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1080697B (de) * 1957-08-07 1960-04-28 Western Electric Co Verfahren zur Herstellung von Halbleiterkoerpern einer Halbleiteranordnung
US3220896A (en) * 1961-07-17 1965-11-30 Raytheon Co Transistor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL251064A (OSRAM) * 1955-11-04
DE1133038B (de) * 1960-05-10 1962-07-12 Siemens Ag Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps
US3183129A (en) * 1960-10-14 1965-05-11 Fairchild Camera Instr Co Method of forming a semiconductor
US3197681A (en) * 1961-09-29 1965-07-27 Texas Instruments Inc Semiconductor devices with heavily doped region to prevent surface inversion
NL286507A (OSRAM) * 1961-12-11
US3281915A (en) * 1963-04-02 1966-11-01 Rca Corp Method of fabricating a semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1080697B (de) * 1957-08-07 1960-04-28 Western Electric Co Verfahren zur Herstellung von Halbleiterkoerpern einer Halbleiteranordnung
US3220896A (en) * 1961-07-17 1965-11-30 Raytheon Co Transistor

Also Published As

Publication number Publication date
NL6517100A (OSRAM) 1966-07-11
FR1462034A (fr) 1966-12-09
US3398030A (en) 1968-08-20
GB1124762A (en) 1968-08-21
FR94777E (fr) 1969-11-21

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