DE1489194C3 - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
DE1489194C3
DE1489194C3 DE1489194A DE1489194A DE1489194C3 DE 1489194 C3 DE1489194 C3 DE 1489194C3 DE 1489194 A DE1489194 A DE 1489194A DE 1489194 A DE1489194 A DE 1489194A DE 1489194 C3 DE1489194 C3 DE 1489194C3
Authority
DE
Germany
Prior art keywords
semiconductor component
component according
transition
manganese
arsenide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1489194A
Other languages
German (de)
English (en)
Other versions
DE1489194B2 (de
DE1489194A1 (de
Inventor
John Robert Brighton Sussex Dahle (Grossbritannien)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1489194A1 publication Critical patent/DE1489194A1/de
Publication of DE1489194B2 publication Critical patent/DE1489194B2/de
Application granted granted Critical
Publication of DE1489194C3 publication Critical patent/DE1489194C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H10P10/12—
    • H10P95/00—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE1489194A 1963-12-23 1964-12-19 Halbleiterbauelement Expired DE1489194C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB50672/63A GB1105314A (en) 1963-12-23 1963-12-23 Improvements in and relating to semiconductor devices

Publications (3)

Publication Number Publication Date
DE1489194A1 DE1489194A1 (de) 1969-05-08
DE1489194B2 DE1489194B2 (de) 1973-04-26
DE1489194C3 true DE1489194C3 (de) 1973-11-29

Family

ID=10456884

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1489194A Expired DE1489194C3 (de) 1963-12-23 1964-12-19 Halbleiterbauelement

Country Status (7)

Country Link
US (1) US3357870A (enExample)
AT (1) AT258370B (enExample)
BE (1) BE657564A (enExample)
CH (1) CH468718A (enExample)
DE (1) DE1489194C3 (enExample)
GB (1) GB1105314A (enExample)
NL (1) NL6414781A (enExample)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE970420C (de) * 1951-03-10 1958-09-18 Siemens Ag Elektrisches Halbleitergeraet
US2847335A (en) * 1953-09-15 1958-08-12 Siemens Ag Semiconductor devices and method of manufacturing them
NL245567A (enExample) * 1958-11-20

Also Published As

Publication number Publication date
AT258370B (de) 1967-11-27
US3357870A (en) 1967-12-12
DE1489194B2 (de) 1973-04-26
NL6414781A (enExample) 1965-06-24
DE1489194A1 (de) 1969-05-08
GB1105314A (en) 1968-03-06
BE657564A (enExample) 1965-06-23
CH468718A (de) 1969-02-15

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)