AT258370B - Halbleitervorrichtung, besonders Photodiode oder opto-elektronischer Transistor - Google Patents

Halbleitervorrichtung, besonders Photodiode oder opto-elektronischer Transistor

Info

Publication number
AT258370B
AT258370B AT1078564A AT1078564A AT258370B AT 258370 B AT258370 B AT 258370B AT 1078564 A AT1078564 A AT 1078564A AT 1078564 A AT1078564 A AT 1078564A AT 258370 B AT258370 B AT 258370B
Authority
AT
Austria
Prior art keywords
opto
semiconductor device
electronic transistor
photodiode
especially photodiode
Prior art date
Application number
AT1078564A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT258370B publication Critical patent/AT258370B/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/02Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185Joining of semiconductor bodies for junction formation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT1078564A 1963-12-23 1964-12-21 Halbleitervorrichtung, besonders Photodiode oder opto-elektronischer Transistor AT258370B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB50672/63A GB1105314A (en) 1963-12-23 1963-12-23 Improvements in and relating to semiconductor devices

Publications (1)

Publication Number Publication Date
AT258370B true AT258370B (de) 1967-11-27

Family

ID=10456884

Family Applications (1)

Application Number Title Priority Date Filing Date
AT1078564A AT258370B (de) 1963-12-23 1964-12-21 Halbleitervorrichtung, besonders Photodiode oder opto-elektronischer Transistor

Country Status (7)

Country Link
US (1) US3357870A (de)
AT (1) AT258370B (de)
BE (1) BE657564A (de)
CH (1) CH468718A (de)
DE (1) DE1489194C3 (de)
GB (1) GB1105314A (de)
NL (1) NL6414781A (de)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE970420C (de) * 1951-03-10 1958-09-18 Siemens Ag Elektrisches Halbleitergeraet
US2847335A (en) * 1953-09-15 1958-08-12 Siemens Ag Semiconductor devices and method of manufacturing them
NL245567A (de) * 1958-11-20

Also Published As

Publication number Publication date
US3357870A (en) 1967-12-12
BE657564A (de) 1965-06-23
DE1489194C3 (de) 1973-11-29
DE1489194B2 (de) 1973-04-26
NL6414781A (de) 1965-06-24
DE1489194A1 (de) 1969-05-08
GB1105314A (en) 1968-03-06
CH468718A (de) 1969-02-15

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