AT258370B - Halbleitervorrichtung, besonders Photodiode oder opto-elektronischer Transistor - Google Patents
Halbleitervorrichtung, besonders Photodiode oder opto-elektronischer TransistorInfo
- Publication number
- AT258370B AT258370B AT1078564A AT1078564A AT258370B AT 258370 B AT258370 B AT 258370B AT 1078564 A AT1078564 A AT 1078564A AT 1078564 A AT1078564 A AT 1078564A AT 258370 B AT258370 B AT 258370B
- Authority
- AT
- Austria
- Prior art keywords
- opto
- semiconductor device
- electronic transistor
- photodiode
- especially photodiode
- Prior art date
Links
- 230000005693 optoelectronics Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB50672/63A GB1105314A (en) | 1963-12-23 | 1963-12-23 | Improvements in and relating to semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
AT258370B true AT258370B (de) | 1967-11-27 |
Family
ID=10456884
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT1078564A AT258370B (de) | 1963-12-23 | 1964-12-21 | Halbleitervorrichtung, besonders Photodiode oder opto-elektronischer Transistor |
Country Status (7)
Country | Link |
---|---|
US (1) | US3357870A (de) |
AT (1) | AT258370B (de) |
BE (1) | BE657564A (de) |
CH (1) | CH468718A (de) |
DE (1) | DE1489194C3 (de) |
GB (1) | GB1105314A (de) |
NL (1) | NL6414781A (de) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE970420C (de) * | 1951-03-10 | 1958-09-18 | Siemens Ag | Elektrisches Halbleitergeraet |
US2847335A (en) * | 1953-09-15 | 1958-08-12 | Siemens Ag | Semiconductor devices and method of manufacturing them |
NL245567A (de) * | 1958-11-20 |
-
1963
- 1963-12-23 GB GB50672/63A patent/GB1105314A/en not_active Expired
-
1964
- 1964-12-18 NL NL6414781A patent/NL6414781A/xx unknown
- 1964-12-18 CH CH1637864A patent/CH468718A/de unknown
- 1964-12-19 DE DE1489194A patent/DE1489194C3/de not_active Expired
- 1964-12-21 AT AT1078564A patent/AT258370B/de active
- 1964-12-22 US US420287A patent/US3357870A/en not_active Expired - Lifetime
- 1964-12-23 BE BE657564A patent/BE657564A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
US3357870A (en) | 1967-12-12 |
BE657564A (de) | 1965-06-23 |
DE1489194C3 (de) | 1973-11-29 |
DE1489194B2 (de) | 1973-04-26 |
NL6414781A (de) | 1965-06-24 |
DE1489194A1 (de) | 1969-05-08 |
GB1105314A (en) | 1968-03-06 |
CH468718A (de) | 1969-02-15 |
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