NL245567A - - Google Patents
Info
- Publication number
- NL245567A NL245567A NL245567DA NL245567A NL 245567 A NL245567 A NL 245567A NL 245567D A NL245567D A NL 245567DA NL 245567 A NL245567 A NL 245567A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US775209A US2956217A (en) | 1958-11-20 | 1958-11-20 | Semiconductor devices and methods of making them |
US775163A US2956216A (en) | 1958-11-20 | 1958-11-20 | Semiconductor devices and methods of making them |
Publications (1)
Publication Number | Publication Date |
---|---|
NL245567A true NL245567A (de) |
Family
ID=27119002
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL245567D NL245567A (de) | 1958-11-20 |
Country Status (5)
Country | Link |
---|---|
US (2) | US2956216A (de) |
DE (1) | DE1098617B (de) |
FR (1) | FR1240303A (de) |
GB (1) | GB930503A (de) |
NL (1) | NL245567A (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3109758A (en) * | 1959-10-26 | 1963-11-05 | Bell Telephone Labor Inc | Improved tunnel diode |
NL121714C (de) * | 1959-12-14 | |||
NL125226C (de) * | 1960-05-02 | |||
US3110849A (en) * | 1960-10-03 | 1963-11-12 | Gen Electric | Tunnel diode device |
US3242061A (en) * | 1962-03-07 | 1966-03-22 | Micro State Electronics Corp | Method of making a tunnel diode assembly |
US3245847A (en) * | 1962-11-19 | 1966-04-12 | Hughes Aircraft Co | Method of producing stable gallium arsenide and semiconductor diodes made therefrom |
GB28298A (de) * | 1963-07-17 | |||
US3289052A (en) * | 1963-10-14 | 1966-11-29 | California Inst Res Found | Surface barrier indium arsenide transistor |
GB1105314A (en) * | 1963-12-23 | 1968-03-06 | Mullard Ltd | Improvements in and relating to semiconductor devices |
US3479573A (en) * | 1967-02-15 | 1969-11-18 | Gen Electric | Wide band gap semiconductor devices having improved temperature independent non-rectifying contacts |
US6976495B2 (en) * | 2002-07-19 | 2005-12-20 | Revlon Consumer Products Corporation | Cosmetic applicator and storage container |
CN102921666B (zh) * | 2012-11-21 | 2014-12-17 | 南京熊猫电子股份有限公司 | 消除电容式触摸屏蚀刻残留溶液的方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2829422A (en) * | 1952-05-21 | 1958-04-08 | Bell Telephone Labor Inc | Methods of fabricating semiconductor signal translating devices |
US2862160A (en) * | 1955-10-18 | 1958-11-25 | Hoffmann Electronics Corp | Light sensitive device and method of making the same |
US2842831A (en) * | 1956-08-30 | 1958-07-15 | Bell Telephone Labor Inc | Manufacture of semiconductor devices |
US2866140A (en) * | 1957-01-11 | 1958-12-23 | Texas Instruments Inc | Grown junction transistors |
-
0
- NL NL245567D patent/NL245567A/xx unknown
-
1958
- 1958-11-20 US US775163A patent/US2956216A/en not_active Expired - Lifetime
- 1958-11-20 US US775209A patent/US2956217A/en not_active Expired - Lifetime
-
1959
- 1959-11-06 GB GB37772/59A patent/GB930503A/en not_active Expired
- 1959-11-10 FR FR809743A patent/FR1240303A/fr not_active Expired
- 1959-11-20 DE DER26765A patent/DE1098617B/de active Pending
Also Published As
Publication number | Publication date |
---|---|
FR1240303A (fr) | 1960-07-25 |
US2956217A (en) | 1960-10-11 |
GB930503A (en) | 1963-07-03 |
US2956216A (en) | 1960-10-11 |
DE1098617B (de) | 1961-02-02 |