NL245567A - - Google Patents

Info

Publication number
NL245567A
NL245567A NL245567DA NL245567A NL 245567 A NL245567 A NL 245567A NL 245567D A NL245567D A NL 245567DA NL 245567 A NL245567 A NL 245567A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL245567A publication Critical patent/NL245567A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
NL245567D 1958-11-20 NL245567A (xx)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US775163A US2956216A (en) 1958-11-20 1958-11-20 Semiconductor devices and methods of making them
US775209A US2956217A (en) 1958-11-20 1958-11-20 Semiconductor devices and methods of making them

Publications (1)

Publication Number Publication Date
NL245567A true NL245567A (xx)

Family

ID=27119002

Family Applications (1)

Application Number Title Priority Date Filing Date
NL245567D NL245567A (xx) 1958-11-20

Country Status (5)

Country Link
US (2) US2956216A (xx)
DE (1) DE1098617B (xx)
FR (1) FR1240303A (xx)
GB (1) GB930503A (xx)
NL (1) NL245567A (xx)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3109758A (en) * 1959-10-26 1963-11-05 Bell Telephone Labor Inc Improved tunnel diode
NL258921A (xx) * 1959-12-14
NL125226C (xx) * 1960-05-02
US3110849A (en) * 1960-10-03 1963-11-12 Gen Electric Tunnel diode device
US3242061A (en) * 1962-03-07 1966-03-22 Micro State Electronics Corp Method of making a tunnel diode assembly
US3245847A (en) * 1962-11-19 1966-04-12 Hughes Aircraft Co Method of producing stable gallium arsenide and semiconductor diodes made therefrom
GB28298A (xx) * 1963-07-17
US3289052A (en) * 1963-10-14 1966-11-29 California Inst Res Found Surface barrier indium arsenide transistor
GB1105314A (en) * 1963-12-23 1968-03-06 Mullard Ltd Improvements in and relating to semiconductor devices
US3479573A (en) * 1967-02-15 1969-11-18 Gen Electric Wide band gap semiconductor devices having improved temperature independent non-rectifying contacts
US6976495B2 (en) * 2002-07-19 2005-12-20 Revlon Consumer Products Corporation Cosmetic applicator and storage container
CN102921666B (zh) * 2012-11-21 2014-12-17 南京熊猫电子股份有限公司 消除电容式触摸屏蚀刻残留溶液的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2829422A (en) * 1952-05-21 1958-04-08 Bell Telephone Labor Inc Methods of fabricating semiconductor signal translating devices
US2862160A (en) * 1955-10-18 1958-11-25 Hoffmann Electronics Corp Light sensitive device and method of making the same
US2842831A (en) * 1956-08-30 1958-07-15 Bell Telephone Labor Inc Manufacture of semiconductor devices
US2866140A (en) * 1957-01-11 1958-12-23 Texas Instruments Inc Grown junction transistors

Also Published As

Publication number Publication date
GB930503A (en) 1963-07-03
DE1098617B (de) 1961-02-02
US2956217A (en) 1960-10-11
US2956216A (en) 1960-10-11
FR1240303A (fr) 1960-07-25

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